Radiation Effects on Advanced Electronic Devices and Circuits

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: 15 July 2025 | Viewed by 425

Special Issue Editors


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Guest Editor
Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN 37240, USA
Interests: radiation reliability; AlGaN/GaN HEMTs; 3D NAND; IGZO; CMOS devices; low-frequency noise; dynamic random access memory

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Guest Editor
Department of Electrical and Computer Engineering, University of Minnesota Twin Cities, Minneapolis, MN 55455, USA
Interests: gate oxide; high-k dielectrics; high-frequency measurement; reliability

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Guest Editor
School of Adavanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
Interests: failure mechanisms and models of semiconductor devices and ferroelectric transistors and memories; reliability sensitivity characterization techniques; reliability of circuits and systems; radiation reliability

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Guest Editor
Intel Corporation, Hillsboro, OR 97124, USA
Interests: single-event effects; fault Injection; program vulnerability factor; reliability analysis of semiconductor devices

Special Issue Information

Dear Colleagues,

Cutting-edge integrated circuit (IC) technologies are relied upon heavily by modern devices and AI systems that match or surpass human performance in numerous applications due to the remarkable advancements in their computational abilities. Over the past few decades, IC components, especially advanced semiconductor devices, have shrunk dramatically in size from tens of microns to nanoscale dimensions. This miniaturization, coupled with advancements in manufacturing techniques, has enabled higher transistor densities and significant improvements in IC performance, cost-effectiveness, and reliability. Critical systems, such as those used in defense, space exploration, and high-energy particle detection, depend on these advanced IC technologies to perform essential functions in environments exposed to high radiation. However, high-radiation conditions can degrade such materials, devices, and ICs, leading to unpredictable behavior or outright failure. If these risks are not addressed during system design, construction, and operation, or if errors are not identified and corrected during use, the consequences could be catastrophic. Moreover, as IC dimensions continue to shrink and operating voltages decrease, electronic systems are becoming increasingly susceptible to radiation effects, not only in avionics but also at ground level. As a result, radiation reliability has become a major concern for electronic applications.

We are pleased to announce a Special Issue on “Radiation Effects on Advanced Electronic Devices and Circuits”, inviting researchers and experts in the field to present their novel and recent achievements in topics of interest that may include, but are not limited to, the following:

  1. Effects of radiation on materials and semiconductor devices.
  2. Effects of radiation on the circuit and system level, like SRAM.
  3. Radiation hardness technology to improve the reliability of electronic components under harsh radiation environments.
  4. Novel characterization methods, like advanced AI algorithms, to explore the radiation degradation of semiconductor materials and electronic components/systems.

This is a fantastic opportunity to present your work and enrich the collective understanding in the field of radiation effects on electronic materials, components, and systems. We welcome submissions that showcase innovative research, introduce new methodologies, and highlight practical electronic applications of technologies and systems under harsh radiation environments. We eagerly anticipate your valuable contributions and hope that this Special Issue will inspire collaboration and knowledge sharing among researchers and readers.

We look forward to receiving your contributions.

Dr. Xun Li
Dr. Yuhang Sun
Dr. Hua Chen
Dr. Hao Qiu
Guest Editors

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Keywords

  • radiation reliability
  • semiconductor devices
  • electronic devices and systems
  • total ionizing dose (TID)
  • displacement damage (DD)
  • single-event effects
  • radiation hardness
  • artificial intelligence

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Published Papers (1 paper)

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Research

18 pages, 8849 KiB  
Article
Experimental Study on Electromagnetic Pulse Sensitivity for Power Modules of FPGAs
by Ning Li, Zhigang Peng, Congguang Mao, Feng Qin, Yang Li, Yonghong Li, Pei Li, Weitao Yang, Haojie Bai, Jiayu Liang, Bohui Hong and Chaohui He
Electronics 2025, 14(6), 1167; https://doi.org/10.3390/electronics14061167 - 16 Mar 2025
Viewed by 226
Abstract
In this paper, the electromagnetic pulse (EMP) sensitivity of power modules of field-programmable gate arrays (FPGAs) is studied experimentally. Two FPGAs with different manufacturing processes are adopted. The pulse current injection (PCI) is, respectively, conducted on four independent power lines of FPGA test [...] Read more.
In this paper, the electromagnetic pulse (EMP) sensitivity of power modules of field-programmable gate arrays (FPGAs) is studied experimentally. Two FPGAs with different manufacturing processes are adopted. The pulse current injection (PCI) is, respectively, conducted on four independent power lines of FPGA test boards, and a specialized test program is designed to explore the influences of resource types and frequencies. The experimental results indicate that different power modules have significantly distinct failure characteristics and thresholds. For each power module, high-frequency (HF) signals generally exhibit greater sensitivity than constant signals in most cases, with frequency being a critical influencing factor. In addition, the EMP sensitivity of the VCCAUX can also be affected by resource types and location constraints. All power modules exhibit different sensitivities to PCIs of different polarities, with the negative injection showing more complex failure characteristics. The manufacturing processes of FPGAs have a slight impact on the EMP sensitivity of their power modules, which is only reflected on the VCCINT. In the case of enabled programmable read-only memory (PROM), an FPGA automatic reconfiguration process has been observed during the PCI experiment for the first time. Moreover, high-value capacitors on the power distribution network (PDN) provide effective filtering by reducing the amplitude and slowing down the edge of the pulsed current. Full article
(This article belongs to the Special Issue Radiation Effects on Advanced Electronic Devices and Circuits)
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