Radiation Effects on Advanced Electronic Devices and Circuits

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: 15 January 2026 | Viewed by 1391

Special Issue Editors


E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN 37240, USA
Interests: radiation reliability; AlGaN/GaN HEMTs; 3D NAND; IGZO; CMOS devices; low-frequency noise; dynamic random access memory

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, University of Minnesota Twin Cities, Minneapolis, MN 55455, USA
Interests: gate oxide; high-k dielectrics; high-frequency measurement; reliability

E-Mail Website
Guest Editor
School of Adavanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
Interests: failure mechanisms and models of semiconductor devices and ferroelectric transistors and memories; reliability sensitivity characterization techniques; reliability of circuits and systems; radiation reliability

E-Mail Website
Guest Editor
Intel Corporation, Hillsboro, OR 97124, USA
Interests: single-event effects; fault Injection; program vulnerability factor; reliability analysis of semiconductor devices

Special Issue Information

Dear Colleagues,

Cutting-edge integrated circuit (IC) technologies are relied upon heavily by modern devices and AI systems that match or surpass human performance in numerous applications due to the remarkable advancements in their computational abilities. Over the past few decades, IC components, especially advanced semiconductor devices, have shrunk dramatically in size from tens of microns to nanoscale dimensions. This miniaturization, coupled with advancements in manufacturing techniques, has enabled higher transistor densities and significant improvements in IC performance, cost-effectiveness, and reliability. Critical systems, such as those used in defense, space exploration, and high-energy particle detection, depend on these advanced IC technologies to perform essential functions in environments exposed to high radiation. However, high-radiation conditions can degrade such materials, devices, and ICs, leading to unpredictable behavior or outright failure. If these risks are not addressed during system design, construction, and operation, or if errors are not identified and corrected during use, the consequences could be catastrophic. Moreover, as IC dimensions continue to shrink and operating voltages decrease, electronic systems are becoming increasingly susceptible to radiation effects, not only in avionics but also at ground level. As a result, radiation reliability has become a major concern for electronic applications.

We are pleased to announce a Special Issue on “Radiation Effects on Advanced Electronic Devices and Circuits”, inviting researchers and experts in the field to present their novel and recent achievements in topics of interest that may include, but are not limited to, the following:

  1. Effects of radiation on materials and semiconductor devices.
  2. Effects of radiation on the circuit and system level, like SRAM.
  3. Radiation hardness technology to improve the reliability of electronic components under harsh radiation environments.
  4. Novel characterization methods, like advanced AI algorithms, to explore the radiation degradation of semiconductor materials and electronic components/systems.

This is a fantastic opportunity to present your work and enrich the collective understanding in the field of radiation effects on electronic materials, components, and systems. We welcome submissions that showcase innovative research, introduce new methodologies, and highlight practical electronic applications of technologies and systems under harsh radiation environments. We eagerly anticipate your valuable contributions and hope that this Special Issue will inspire collaboration and knowledge sharing among researchers and readers.

We look forward to receiving your contributions.

Dr. Xun Li
Dr. Yuhang Sun
Dr. Hua Chen
Dr. Hao Qiu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • radiation reliability
  • semiconductor devices
  • electronic devices and systems
  • total ionizing dose (TID)
  • displacement damage (DD)
  • single-event effects
  • radiation hardness
  • artificial intelligence

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • Reprint: MDPI Books provides the opportunity to republish successful Special Issues in book format, both online and in print.

Further information on MDPI's Special Issue policies can be found here.

Published Papers (2 papers)

Order results
Result details
Select all
Export citation of selected articles as:

Research

15 pages, 2035 KB  
Article
Real-Time Technique for Semiconductor Material Parameter Measurement Under Continuous Neutron Irradiation with High Integral Fluence
by Ivan S. Vasil’evskii, Aleksey N. Klochkov, Pavel V. Nekrasov, Aleksander N. Vinichenko, Nikolay I. Kargin, Almas Yskakov, Maksim V. Bulavin, Aleksey V. Galushko, Askhat Bekbayev, Bagdaulet Mukhametuly, Elmira Myrzabekova, Nurdaulet Shegebayev, Dana Kulikbayeva, Rassim Nurulin, Aru Nurkasova and Ruslan Baitugulov
Electronics 2025, 14(19), 3802; https://doi.org/10.3390/electronics14193802 - 25 Sep 2025
Viewed by 306
Abstract
The degradation of the electronic properties of semiconductor materials and electronic devices under neutron irradiation is a critical issue for the development of electronic systems intended for use in nuclear and thermonuclear energy facilities. This study presents a methodology for real-time measurement of [...] Read more.
The degradation of the electronic properties of semiconductor materials and electronic devices under neutron irradiation is a critical issue for the development of electronic systems intended for use in nuclear and thermonuclear energy facilities. This study presents a methodology for real-time measurement of the electrical parameters of semiconductor structures during neutron irradiation in a high-flux reactor environment. A specially designed irradiation fixture with an electrical measurement system was developed and implemented at the WWR-K research reactor. The system enables simultaneous measurement of electrical conductivity and the Hall effect, with automatic temperature control and remote data acquisition. The sealed fixture, equipped with radiation-resistant wiring and a temperature control, allows for continuous measurement of remote material properties at neutron fluences exceeding 1018 cm−2, eliminating the limitations associated with post-irradiation handling of radioactive samples. The technique was successfully applied to the two different InGaAs-based heterostructures, revealing distinct mechanisms of radiation-induced modification: degradation of mobility and carrier concentration in the InGaAs quantum well structure on GaAs substrate, and transmutation-induced doping effects in the heterostructure on InP substrate. The developed methodology provides a reliable platform for evaluating radiation resistance and optimizing materials for magnetic sensors and electronic components designed for high-radiation environments. Full article
(This article belongs to the Special Issue Radiation Effects on Advanced Electronic Devices and Circuits)
Show Figures

Graphical abstract

18 pages, 8849 KB  
Article
Experimental Study on Electromagnetic Pulse Sensitivity for Power Modules of FPGAs
by Ning Li, Zhigang Peng, Congguang Mao, Feng Qin, Yang Li, Yonghong Li, Pei Li, Weitao Yang, Haojie Bai, Jiayu Liang, Bohui Hong and Chaohui He
Electronics 2025, 14(6), 1167; https://doi.org/10.3390/electronics14061167 - 16 Mar 2025
Viewed by 736
Abstract
In this paper, the electromagnetic pulse (EMP) sensitivity of power modules of field-programmable gate arrays (FPGAs) is studied experimentally. Two FPGAs with different manufacturing processes are adopted. The pulse current injection (PCI) is, respectively, conducted on four independent power lines of FPGA test [...] Read more.
In this paper, the electromagnetic pulse (EMP) sensitivity of power modules of field-programmable gate arrays (FPGAs) is studied experimentally. Two FPGAs with different manufacturing processes are adopted. The pulse current injection (PCI) is, respectively, conducted on four independent power lines of FPGA test boards, and a specialized test program is designed to explore the influences of resource types and frequencies. The experimental results indicate that different power modules have significantly distinct failure characteristics and thresholds. For each power module, high-frequency (HF) signals generally exhibit greater sensitivity than constant signals in most cases, with frequency being a critical influencing factor. In addition, the EMP sensitivity of the VCCAUX can also be affected by resource types and location constraints. All power modules exhibit different sensitivities to PCIs of different polarities, with the negative injection showing more complex failure characteristics. The manufacturing processes of FPGAs have a slight impact on the EMP sensitivity of their power modules, which is only reflected on the VCCINT. In the case of enabled programmable read-only memory (PROM), an FPGA automatic reconfiguration process has been observed during the PCI experiment for the first time. Moreover, high-value capacitors on the power distribution network (PDN) provide effective filtering by reducing the amplitude and slowing down the edge of the pulsed current. Full article
(This article belongs to the Special Issue Radiation Effects on Advanced Electronic Devices and Circuits)
Show Figures

Figure 1

Back to TopTop