Search Results (116)

Optical klystrons have been developed in storage ring free-electron lasers (FELs) as insertion devices to increase the FEL gain in a straight section with limited length. By adjusting the magnetic field in the dispersion section of the optical klystron to shift the relative delay between the electron bunch and FEL pulse from an integer multiple of the FEL wavelength, FELs can oscillate at two wavelengths. The electron density of the electron bunch that interacts with the FEL pulse in a small-signal regime is modulated at the FEL wavelength period. When the FEL oscillates simultaneously at two wavelengths, the electron density of the electron bunch beats through the modulation with two periods. This beat generates long-wavelength coherent edge radiation at a bending magnet located in the straight section containing the optical klystron. Difference-frequency waves induced by dual-wavelength ultraviolet free-electron lasers generate a high-intensity mid-infrared monochromatic beam. Our findings will lay the foundation for the development of the difference-frequency waves of soft X-rays and extreme ultraviolet light using hard X-ray FELs. Full article

Percentage depth–dose (PDD) distributions are fundamental to characterizing radiation beams in radiotherapy. This review provides an overview of both methods and sensor technologies for measuring PDD in photon, electron, proton, and carbon-ion beams. We summarize conventional dosimetry techniques, including water-phantom scanning with ionization chambers (cylindrical and parallel-plate) and radiochromic film, and discuss their strengths (established accuracy, calibration traceability) and limitations (volume averaging, delayed readout). We then examine emerging sensor technologies designed to improve spatial resolution, speed, and radiation hardness: multi-layer ionization chambers and Faraday cups for one-shot PDD acquisition; scintillator-based detectors (liquid, plastic, and fiber-optic) enabling real-time and high-resolution depth–dose measurements; advanced semiconductor detectors including silicon carbide diodes; as well as novel approaches such as ionoacoustic range sensing for proton beams. For each modality and detector type, we emphasize clinical relevance, measurement accuracy, spatial resolution, radiation durability, and suitability for high dose-per-pulse environments (e.g., FLASH radiotherapy). Current challenges, such as detector response in regions of steep dose gradient, saturation or recombination at ultra-high dose rates, and energy-dependent sensitivity in mixed radiation fields, are analyzed in detail. We also highlight the limitations of each technique and discuss ongoing improvements and prospects for clinical implementation. In summary, no single detector technology fully satisfies all requirements for fast, high-accuracy, high-resolution, radiation-hard PDD measurement, but the integration of emerging sensor innovations into clinical dosimetry promises to enhance the precision and efficiency of radiotherapy quality assurance. Full article

Silicon carbide (SiC) detectors continue to emerge as a promising technology for applications requiring radiation hardness, fast response times, and stable operation in harsh environments. In this work, the charge-collection dynamics of ultra-thin membrane SiC detectors are investigated through time-dependent TCAD simulations, consistent with previously reported measurements. The study analyzes the transient response following the localized generation of electron–hole pairs induced by ions, comparing bulk and membrane detector geometries with identical active-layer thicknesses. Two-dimensional simulations provide a time-resolved characterization of the electron and hole current-density distributions within the active region of the device. The results show that both device architectures present a transient current signal featuring two main components. Despite similarities in the prompt drift-driven signal component, the SiC membrane response is characterized by a short secondary component returning to zero within 3.5 × 10^–10 s at zero external bias, making it well-suited for reliable single-ion detection. In contrast, bulk devices exhibit a markedly different response, characterized by a significantly more intense and prolonged secondary component followed by a long tail that does not return to zero within the simulation time window for all investigated reverse biases. This tail is the result of the collection of carriers generated in the substrate that reach the depletion region through diffusion-driven processes. These findings contribute to the optimization of SiC-based solid-state detectors for quantum-technology device fabrication, demonstrating that the removal of the substrate drastically reduces the diffusion-dominated current component, thereby ensuring precise timing and minimal charge loss. Full article

Large-scale advanced energy systems, including fusion devices, high-power plasma sources, and accelerator-driven energy platforms, increasingly depend on real-time, hardware-level data processing for diagnostics, control, and protection. In such installations, ultra-low latency, deterministic throughput, and multi-decade operational lifetimes are not optional design goals but strict system-level requirements. While similar timing constraints exist in high-energy physics infrastructures, energy applications place a stronger emphasis on long-term stability, maintainability, and reproducibility of digital signal processing pipelines. This work investigates whether high-level synthesis (HLS) provides a practical and sustainable design methodology for implementing both classical pattern-based and compact neural network (NN) trigger logic on Field-Programmable Gate Arrays (FPGAs) under realistic energy-system constraints. Using representative commercial toolchains (Intel HLS and hls4ml) as reference workflows, we demonstrate the capabilities of fixed-point, fully pipelined streaming architectures, while also identifying critical shortcomings of pragma-driven HLS approaches in terms of architecture transparency, long-term portability, and systematic multi-objective design-space exploration, all of which are crucial for long-lived energy projects and plasma diagnostic systems. These limitations directly motivate the development of a custom, vendor-agnostic, extensible HLS framework (PyHLS), specifically oriented toward deterministic latency, reproducibility, and physics-grade verification demands of advanced energy infrastructures. Gas Electron Multipliers (GEMs) are modern gaseous detectors increasingly employed in plasma diagnostics, radiation monitoring, and high-power energy experiments, where high rate capability, fine spatial resolution, and radiation tolerance are required. Their massively parallel signal structure and continuous data streams make GEMs a representative and demanding benchmark for FPGA-based real-time trigger and preprocessing systems in energy-related environments. The primary objective of this study is to establish a pragmatic technological baseline, demonstrating that contemporary HLS workflows can reliably support both template-based and neural inference-based trigger architectures within strict timing, resource, and power constraints typical for advanced energy installations. Furthermore, we outline a scalable development path toward multi-channel and two-dimensional (pixelated) GEM readout architectures, directly applicable to fusion diagnostics, plasma accelerators, beam–plasma interaction studies, and radiation-hard energy monitoring platforms. Although the proposed methodology remains fully transferable to large-scale physics trigger systems, its principal relevance is directed toward real-time diagnostics and protection layers in next-generation energy systems. Full article

Achieving reliable, grid-scale electricity generation from nuclear fusion, as envisioned by the DEMOnstration Fusion Power Plant (DEMO) and future commercial reactors, requires unprecedented plasma stability and long-term control. This operational goal is fundamentally challenged by, among others, the dynamic nature of the high temperature plasma and the need to monitor high-Z impurities, such as tungsten, which can severely compromise energy confinement, resulting in discharge disruption and damage to internal reactor walls. Real-time Soft X-ray (SXR) diagnostic systems are therefore an integral and critical component of fusion power plant infrastructure, providing essential temporal and spatial resolution data on these fast-evolving phenomena. To address the severe demands imposed by the extreme operating environment of future fusion reactors, such as DEMO (including intense neutron and gamma fluxes), this work details a current stage in the long-term development of an advanced and robust diagnostic system engineered specifically for technological preparation and future application in these high-fluence environments. This paper presents the third generation of the SXR measurement system, GEM3k, based on Gas Electron Multiplier (GEM) technology. This novel diagnostic utilizes a Field Programmable Gate Array (FPGA)-based architecture, specifically designed for the high-rate acquisition of energy- and spatially resolved plasma radiation distributions. The GEM3k design exploits the inherent radiation hardness of GEM detectors, positioning them as robust sensor units for monitoring plasma dynamics and impurity emissions in future fusion environments. The system readout comprises approximately 34,000 individual pixels mapped to nearly 3000 measurement channels in an XYUV coordinate configuration. This layout enables submillimeter spatial resolution simultaneously with a time resolution better than 10 ms. Addressing the engineering challenges of such a complex high-density readout, this work details the comprehensive design of the GEM3k system, focusing on its architecture, electronics, performance estimations, and data distribution strategies. By enabling precise tracking of impurities and fast plasma behavior, the GEM3k system contributes to the stable, high-gain operation required for future fusion reactors. This directly supports the development of sustainable fusion energy and its eventual integration into modern electricity grids. Furthermore, the planned enhancement to a real-time operating mode could pave a way for a next-generation system for direct integration into reactor control loops. Currently in the prototype phase with initial hardware tests completed, the GEM3k design leverages our extensive experience with diagnostics developed for the JET and WEST tokamaks. Full article

Gallium nitride (GaN) has emerged as one of the most promising wide-bandgap semiconductors for next-generation space photovoltaics. In contrast to conventional III–V compounds such as GaAs and InP, which are highly efficient under terrestrial conditions but suffer from radiation-induced degradation and thermal instability, GaN offers an exceptional combination of intrinsic material properties ideally suited for harsh orbital environments. Its wide bandgap, high thermal conductivity, and strong chemical stability contribute to superior resistance against high-energy protons, electrons, and atomic oxygen, while minimizing thermal fatigue under repeated cycling between extreme temperatures. Recent progress in epitaxial growth—spanning metal–organic chemical vapor deposition, molecular beam epitaxy, hydride vapor phase epitaxy, and atomic layer deposition—has enabled unprecedented control over film quality, defect densities, and heterointerface sharpness. At the device level, InGaN/GaN heterostructures, multiple quantum wells, and tandem architectures demonstrate outstanding potential for spectrum-tailored solar energy conversion, with modeling studies predicting efficiencies exceeding 40% under AM0 illumination. In this review article, the current state of knowledge on GaN materials and device architectures for space photovoltaics has been summarized, with emphasis placed on recent progress and persisting challenges. Particular focus has been given to defect management, doping strategies, and bandgap engineering approaches, which define the roadmap toward scalable and radiation-hardened GaN-based solar cells. With sustained interdisciplinary advances, GaN is anticipated to complement or even supersede traditional III–V photovoltaics in space, enabling lighter, more durable, and radiation-hard power systems for long-duration missions beyond Earth’s magnetosphere. Full article

Environmentally friendly materials with superior structural, physical, optical, and shielding capabilities are of great technological importance and are continually being investigated. In this work, novel multicomponent borate glasses with the composition xTiO₂-10BaO-5Al₂O₃-5WO₃-20Bi₂O₃-(60-x) B₂O₃, where 0 ≤ x ≤ 15 mol%, were produced via the melt-quenching technique. The increase in TiO₂ content results in a decrease in molar volume and a corresponding increase in density, indicating the formation of a compact, rigid, and mechanically hard glass network. Elastic constant measurements further confirmed this behavior. FTIR analysis confirms the transformation of BO₃ to BO₄ units, signifying improved network polymerization and structural stability. The prepared glasses exhibit an optical absorption edge in the visible region, demonstrating their strong ultraviolet light blocking capability. Incorporation of TiO₂ leads to an increase in refractive index, optical basicity, and polarizability, and a decrease in the optical band gap and metallization number; all of these suggest enhanced electron density and polarizability of the glass matrix. Radiation shielding properties were evaluated using Phy-X/PSD software. The outcomes illustrate that the Mass Attenuation Coefficient (MAC), Effective Atomic Number (Z_eff), Linear Attenuation Coefficient (LAC) increase, while Mean Free Path (MFP) and Half Value Layer (HVL) decrease with increasing TiO₂ at the expense of B₂O₃, confirming superior gamma-ray attenuation capability. Additionally, both TiO₂-doped and undoped samples show higher fast neutron removal cross sections (FNRCS) compared to several commercial glasses and concrete materials. Overall, the incorporation of TiO₂ significantly enhances the optical performance and radiation-shielding efficiency of the environmentally friendly glass system, making these potential candidates for advanced photonic devices and radiation-shielding applications. Full article

The study of Ultra-High-Energy Cosmic Rays is made possible by space telescopes that allow for the recording of signals generated by Extensive Air Showers (EAS) on the night side of the Earth’s atmosphere. One of the requirements for these telescopes is the detection of very low photon fluxes, achievable using the latest generation SiPMs characterized by high intrinsic gains, low power consumption, low weight, and robustness against accidental exposure to light. Despite these advantages, some technological issues still need to be addressed, such as the radiation hardness for operation in space. Therefore, the design of a SiPM-based focal surface for UHECR detection must consider the space qualification of SiPM arrays, with the development of compact arrays optimized for low dead-area focal surfaces. SiSMUV (SiPM-based Space Monitor for UV light) is a project dedicated to developing a compact and modular UV detector for use in space telescopes designed to study the fluorescence and Cherenkov signals produced by Ultra-High-Energy Cosmic Rays (UHECRs). Each SiSMUV module incorporates a matrix of SiPMs, a readout ASIC (Radioroc by Weeroc), and an FPGA into a monolithic block. This design enables the acquisition and processing of signals from the sensors. The system can connect to a PC for standalone operation or with back-end electronics for integration into more complex systems. In this paper, we will describe the prototype electronics, the experimental setup and the measurements performed to obtain parameters such as the gain of the SiPMs, and their photon detection efficiency (PDE). We will also present the firmware developed to interface with the readout ASIC and to transmit data to other peripherals. Full article

Silicon carbide (SiC) has been widely adopted in the semiconductor industry, particularly in power electronics, because of its high temperature stability, high breakdown field, and fast switching speeds. Its wide bandgap makes it an interesting candidate for radiation-hard particle detectors in high-energy physics and medical applications. Furthermore, the high electron and hole drift velocities in 4H-SiC enable devices suitable for ultra-fast particle detection and timing applications. However, currently, the front-end readout electronics used for 4H-SiC detectors constitute a bottleneck in investigations of the charge carrier drift. To address these limitations, a high-frequency readout board with an intrinsic bandwidth of 10 GHz was developed. With this readout, the transient current signals of a 4H-SiC diode with a diameter of 141 μm and a thickness of 50 μm upon UV laser, alpha particle, and high-energy proton beam excitation were recorded. In all three cases, the electron and hole drift can clearly be separated, which enables the extraction of the charge carrier drift velocities as a function of the electric field. These velocities, directly measured for the first time, provide a valuable comparison to Monte Carlo-simulated literature values and constitute an essential input for TCAD simulations. Finally, a complete simulation environment combining TCAD, the Allpix² framework, and SPICE simulations is presented, which is in good agreement with the measured data. Full article

This study describes the effect of electron radiation on the macro- and micro-mechanical and tribological properties of composite polypropylene filled with 25% glass fiber. Micro-mechanical and tribological properties were investigated both on the sample surface and at various depths below the surface. Polypropylene was irradiated with radiation doses of 15, 33, 45, 66 and 99 kGy. As the results show, electron radiation has an influence on the change in PP’s structure, in which due to the electron radiation, a crosslinked phase and an increase in crystallinity are formed. These changes in morphology are reflected in an enhancement of micro-mechanical and tribological properties both at the surface and in deeper layers below the surface. More crosslinking and recrystallization occur across the sample’s cross-section up to a depth of 2 mm, where greater micro-mechanical and tribological properties are also measured. The difference between the surface and the center of the material can be up to 32%. The optimum radiation dose appears to be 45 kGy, where the maximum crosslinking, highest crystallinity and best micro-mechanical and tribological properties are found. The difference between non-irradiated and irradiated filled PP is 52% in indentation hardness. In terms of macro-mechanical properties, the tensile modulus increased by 44% (45 kGy). This translates into higher surface wear resistance and the overall stiffness of the part. Higher doses of radiation cause the beginning of degradation processes, which are manifested by a decrease in the degree of embedding, crystallinity and thus micro-mechanical and tribological properties. Full article

This paper presents the investigation of the effect of electron radiation or the combined action of this radiation and triallyl isocyanurate (TAIC) on the structural, thermal, and mechanical properties of epoxy resin filled with a fraction of dust fibers (DFs) from recycled wind turbine blades. The resin containing 20 wt% of DF was irradiated with doses of 40, 80, 120, and 160 kGy. The results showed that electron radiation had only a slight effect on the properties of the studied composite, mainly on its glass transition temperature. More significant changes were observed with the combined action of radiation and TAIC. The main effect that occurred after the TAIC addition was the plasticization of the polymer matrix. With its participation, the glass transition temperature, thermal stability, and the hardness of the material and its flexural modulus were significantly reduced. The degree of change in these properties was regulated by the radiation dose. Furthermore, no significant changes in the composite structure were observed after radiation treatment, while the introduction of TAIC into the polymer matrix caused the formation of gas cells, probably due to the partial decomposition of TAIC. Full article

As the global 3D printing market continues to grow, the consumption of plastic products produced by 3D printers is also increasing. The role of 3D-printed products in both daily use and industrial applications has been progressively reinforced. Plastic materials undergo physical and chemical changes when exposed to environmental conditions such as temperature, light, and humidity. Consequently, they are subjected to aging during use, which shortens their service life. With the expanding use of 3D printing technology in various sectors such as healthcare, automotive, aerospace, and defense, it has become increasingly important to understand the changes (potential decreases or losses) in the performance of these materials after long-term exposure to environmental conditions. This study aims to contribute to the understanding of potential changes in 3D-printed ABS Plus material by examining the phenomenon of aging induced by exposure to radiation from a xenon arc lamp. ABS Plus samples of different colors (yellow, purple, red, green, and blue) were subjected to aging for 0, 112, 225, 337, and 450 h using a xenon arc lamp. To investigate the effects of aging, the mechanical (tensile, flexural, and hardness) and optical (color and gloss variations) properties of the samples were compared before and after aging. Following the mechanical tests, the fracture modes of the specimens were also examined. In addition, Scanning Electron Microscope (SEM) images were obtained to further discuss the effects of aging. The results revealed that the mechanical properties of the reference samples varied depending on color. The highest tensile strength was observed in the yellow samples (33.46 MPa), while the highest flexural strength was recorded in the green samples (58.46 MPa). After aging, the lowest tensile strength was found in the purple samples aged for 337 h (24.63 MPa), whereas the lowest bending force was measured in the red samples aged for 450 h (45.27 N). Overall, the mechanical properties of the samples varied with aging duration, with the blue and green specimens being the least affected. For the blue specimens, after 112, 225, and 337 h of aging, an increase in tensile strength was observed (2.77%, 10.54%, and 9.58%, respectively), while a decrease occurred after 450 h of aging (−6.22%). For the green specimens, after 112, 225, and 337 h of aging, the tensile strength remained similar to that of the reference sample (−2.97%, 0.23%, and 0.05%, respectively) but decreased after 445 h of aging (−8.09%). In terms of optical properties, the most significant color change (−23.51) was observed in the purple samples. Gloss measurements indicated that the impact of aging increased with exposure time. Full article

Silicon carbide (SiC) is a key material for electronics operating in harsh environments due to its wide bandgap, high thermal conductivity, and radiation hardness. In this work, we present a SPICE model for a 4H-SiC BJT and TTL inverter exposed to gamma radiation. The devices were fabricated using a dedicated SiC bipolar process at KTH (Sweden) and tested at the ⁶⁰Co Calliope (Italy) facility up to 800 krad _(Si). Experimental data, including Gummel plots and inverter transfer characteristics, were used to calibrate and refine a VBIC-based SPICE model. The adjusted model accounts for both bulk and surface degradation mechanisms by extracting parameters of forward current gain (βF), saturation current (IS), base resistance (RB), and forward transit time (TF). Results show a uniform degradation of BJTs, primarily manifested as reduced current gain and increased base resistance, while the inverter maintained functional operation up to 600 krad_(Si). Extrapolation of the SPICE model predicts a failure threshold near 16 Mrad_(Si), far exceeding the tolerance of conventional silicon circuits. By linking radiation-induced defects at the material and interface levels to circuit-level behavior, the proposed model enables realistic design and lifetime prediction of SiC integrated circuits for satellites, planetary missions, and other radiation-intensive applications. Full article

With the advent of novel scintillators featuring higher atomic numbers and enhanced radiation hardness, these materials exhibit potential applications under high-dose-rate irradiation. In this work, we systematically compared the photon output characteristics of ten mainstream or emerging inorganic scintillators under high-dose-rate irradiation with low-energy (0.1–1.7 MeV) electrons or protons. Initially, under electron irradiation among ~0.1 to ~50 rad/s, responses exhibited saturation trends to varying degrees, with their variations conforming to the saturation model proposed. However, under proton irradiation among ~5 rad/s to ~150 rad/s, responses exhibited sigmoidal trends due to competition between radiation-induced defects and luminescence centers. Through dynamic derivation of carriers and them, a triple-balance model that demonstrated close agreement with such variations was established. Subsequently, energy-dependent responses under proton irradiation exhibited marked nonlinearity, which were well fitted by Birks’ law, confirming the validity of our measurements. In contrast, electron-induced responses remained nearly linear with increasing energy. Then, after high-dose-rate and prolonged irradiation, BGO revealed highest response degradation, while YAG(Ce) demonstrated most radiation-damage resistance. Moreover, Ce-doped scintillators displayed higher afterglow levels after prolonged irradiation, particularly for YAG(Ce). In summary, these experimental analyses can provide critical guidance for material selection and effective calibration of scintillator detectors operating under high-dose-rate radiation from charged particles. Full article

Understanding the limitations of cold-formed aluminum alloys in practice applications is essential, particularly due to the risk of substructural changes and a reduction in strength when exposed to elevated temperatures. In this study, the thermal stability of the ultra-fine-grained (UFG) structure formed by equal channel angular pressing (ECAP) at room temperature and the mechanical properties of the AlSi7MgCu0.5 alloy were investigated. Prior to ECAP, the plasticity of the as-cast alloy was enhanced by a heat treatment consisting of solution annealing, quenching, and artificial aging to achieve an overaged state. Four repetitive passes via ECAP route A resulted in the homogenization of eutectic Si particles within the α-solid solution, the formation of ultra-fine grains and/or subgrains with high dislocation density, and a significant improvement in alloy strength due to strain hardening. The main objective of this work was to assess the microstructural and mechanical stability of the alloy after post-ECAP annealing in the temperature range of 373–573 K. The UFG microstructure was found to be thermally stable up to 523 K, above which notable grain and/or subgrain coarsening occurred as a result of discontinuous recrystallization of the solid solution. Mechanical properties remained stable up to 423 K; above this temperature, a considerable decrease in strength and a simultaneous increase in ductility were observed. Synchrotron radiation X-ray diffraction (XRD) was employed to analyze the phase composition and crystallographic characteristics, while transmission electron microscopy (TEM) was used to investigate substructural evolution. Mechanical properties were evaluated through tensile testing, impact toughness testing, and hardness measurements. Full article