Search Results (161)

Nitridation of different materials using ion implantation is of considerable interest for many applications. As electronic components, oxynitride (SiO_xN_y) layers exhibit beneficial properties such as precise compositional variability, refractive index tunability, oxidation resistance, and low mechanical stress. In the present study we investigate nanoscale SiO_xN_y synthesized using ion implantation methods. To introduce N⁺ ions into a shallow Si subsurface region, both conventional ion beam implantation and plasma immersion ion implantation with subsequent high-temperature treatment in dry O₂ are used. The optical and morphological properties and chemical bonding of formed SiO_xN_y layers were studied by applying spectroscopic ellipsometry in the range of VIS-Near IR (SE) and IR (IR-SE), Raman spectroscopy and Atomic Force Microscopy (AFM). Monte Carlo modeling of implant profiles contributed to understanding physical and chemical processes and predicted different influences of the incorporated N⁺ ions on the oxidation mechanism, confirmed by the thickness dependence of SiO_xN_y/Si layers obtained from the SE data analysis. IR-SE spectral analysis established the formation of Si-O, Si-N, Si-N-O and Si-Si chemical bonds in the grown layers. The occurrence of amorphization of the Si crystal lattice due to incorporation of high-energy N⁺ ions into the Si lattice is confirmed by the Raman and ellipsometry results. The free Si atoms can congregate, forming nanocrystalline clusters. AFM imaging revealed that both implantation methods left the surface of the resulting SiO_xN_y layers considerably smooth with similar roughness parameter values. The results of the studies imply that the technological approaches used allow the production of high-quality nanoscale silicon oxynitride films with appropriate tunable composition and properties for possible application in advanced electronic devices for nanoelectronics, optoelectronics and sensor applications. Full article

Background: Tantalum in cytotoxicity tests showed no toxicity effect, as well as promoting bone regeneration through the differentiation, proliferation, mineralisation and adhesion of osteoblasts in in vitro and in vivo studies. This study aims to determine and compare the chemical composition, roughness and wettability of non-coated commercially pure titanium (CpTi) disc surfaces with CpTi discs that have been coated with tantalum oxynitride film (TaON) via a modified plasma sputtering coating technique. Methods: Two groups were tested that included the TaON-coated CpTi discs and non-coated CpTi discs. A modified reactive plasma sputtering apparatus was used for coating the CpTi discs with TaON at different time durations, i.e., 4, 6, and 8 h. The surface properties of the coated and non-coated discs were studied using X-ray diffraction (XRD) analysis, energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM), and contact angle measurement. Results and Conclusions: The results showed that 8 h was the best coating duration. The XRD analysis showed the presence of a new peak in the case of the TaON-coated CpTi disc that was absent in the non-coated CpTi disc. Furthermore, the SEM analysis revealed that the TaON-coated CpTi disc showed a better distribution of surface roughness compared to the non-coated disc. The non-coated CpTi discs showed lower wettability compared to the TaON-coated CpTi discs. The result shows the importance of a TaON coat in changing the surface properties of CpTi which will be used in dental implants; this result will enhance the idea of surface treatment and its relationship with the enhancement and acceleration of bone formation around dental implants in future. The novelty of the newly modified reactive plasma sputtering technique used in this study as a coating technique for CpTi discs lies in the promising tantalum oxynitride, as Ta had no toxicity effect in cytotoxicity tests and promoted adhesion, proliferation, differentiation, the mineralisation of osteoblasts and bone regeneration in vitro and in vivo. The mean target of the work is to enhance the osseointegration of CPTi dental implants with different surface coatings including Ta oxide, nitride and oxynitride. The results of the first two coatings are already published, and the third coating technique is investigated in this study. Full article

Hydrogen is a key energy carrier for achieving carbon neutrality, yet its widespread deployment is hindered by challenges associated with efficient hydrogen production, safe and reversible hydrogen storage, and hydrogen-induced embrittlement. Severe plastic deformation processes, particularly high-pressure torsion (HPT), have emerged as a powerful approach capable of addressing these challenges through extreme grain refinement, defect engineering, phase stabilization far from equilibrium, and synthesis of novel materials. This article reviews the impact of HPT on hydrogen-related materials, covering hydrogen production, hydrogen storage, and hydrogen embrittlement resistance. For hydrogen production, HPT enables the synthesis of nanostructured, defect-rich, and compositionally complex compounds, including high-entropy oxides and oxynitrides, which exhibit enhanced hydrolytic, electrocatalytic, photocatalytic, photoelectrocatalytic, and photoreforming performance. For hydrogen storage, HPT fundamentally modifies hydrogenation activation and kinetics, and modifies thermodynamics by hydrogen binding energy engineering, enabling reversible hydrogen storage at room temperature in systems such as Mg-based and high-entropy alloys. For hydrogen embrittlement resistance, HPT under optimized conditions suppresses hydrogen-assisted fracture by engineering ultrafine grains and defects (vacancies, dislocations, Lomer–Cottrell locks, D-Frank partial dislocations, stacking faults, twins, and grain boundaries) that control hydrogen diffusion, trapping, and strain localization. By integrating insights across these three domains, this article highlights HPT as a transformative strategy for developing next-generation hydrogen materials and identifies key opportunities for future research at the intersection of severe plastic deformation and hydrogen technologies. Full article

TiO_xN_y coatings are known for their good biocompatibility and corrosion resistance and have been previously explored for biomedical applications, including cardiovascular stents. In this work, emphasis is placed on a systematic investigation of the effect of substrate bias voltage on the structural, morphological, and mechanical properties of TiO_xN_y films deposited by reactive magnetron sputtering. TiO_xN_y coatings were deposited on 316L stainless steel substrates using a pure titanium target (99.99%) in an Ar–N₂–O₂ gas mixture at various substrate bias voltages (0 to −150 V). The influence of substrate bias on the deposition rate, structure, and mechanical properties of the films was investigated. X-ray diffraction (XRD) analysis revealed the sequential phase evolution from cubic TiN to oxynitride TiON and further to TiO₂ (anatase/rutile) with increasing negative substrate bias, indicating that ion bombardment energy plays a decisive role in determining the crystallinity and phase composition of the coatings. The coating deposited at −50 V exhibited the highest hardness (~430 HV) and good adhesion strength (critical load 20–25 N). Contact angle measurements confirmed the hydrophilic behavior of the coatings, which is favorable for biomedical applications. Full article

A Ti-6Al-4V titanium alloy exhibits low hardness and poor wear resistance under sliding contact. This study evaluates the effect of low-pressure gas oxynitriding (LPON) followed by low-temperature oxidation on its microstructure and tribological performance. Specimens were nitrided at 1000 °C for 100 min, then oxidized at 450–600 °C for 120 min. Microstructural and phase changes were characterized by SEM and XRD; surface roughness, hardness, and wear were assessed using 3D laser scanning microscopy, microhardness profiling, and pin-on-disk tests under 2 N and 4 N loads. XRD revealed TiN, Ti₂N, Ti₂AlN, and TiO₂ phases, with oxidation temperature governing TiN grain growth and nitride-to-oxide transformation. Oxidation at 500–550 °C formed a dense TiO₂-rich layer over a stable TiN/Ti₂N substrate, achieving hardness up to ~670 HV_0.025 and the lowest wear volume. At low load (2 N), nitriding alone provided the highest wear resistance, while at higher load (4 N), oxidation yielded only slight improvement due to oxide embrittlement. Excessive oxidation at 600 °C increased roughness, induced spallation, and reduced wear resistance. The optimal condition (550 °C) offered synergistic protection from nitrides and stable oxides, enhancing load-bearing capacity. Overall, duplex nitriding–oxidation is most effective for low-to-moderate load applications, with potential use in biomedical implants, aerospace fasteners, and precision components. Full article

In this study, we investigate the improvement of physical and electrical characteristics in 4H-silicon carbide (SiC) MOS capacitors using Aluminum Oxynitride (AlON) thin films fabricated via Plasma-Enhanced Atomic Layer Deposition (PEALD). AlON thin films are grown on SiC substrates using a high ratio of NH₃ and O₂ as nitrogen and oxygen sources through PEALD technology, with improved material properties and electrical performance. The AlON films exhibited excellent thickness uniformity, with a minimal error of only 0.14%, a high refractive index of 1.90, and a low surface roughness of 0.912 nm, demonstrating the precision of the PEALD process. Through XPS depth profiling and electrical characterization, it was found that the AlON/SiC interface showed a smooth transition from Al-N and Al-O at the surface to Al-O-Si at the interface, ensuring robust bonding. Electrical measurements indicated that the SiC/AlON MOS capacitors demonstrated Type I band alignment with a valence band offset of 1.68 eV and a conduction band offset of 1.16 eV. Additionally, the device demonstrated a low interface state density (D_it) of 7.6 × 10¹¹ cm⁻²·eV⁻¹ with a high breakdown field strength of 10.4 MV/cm. The results highlight AlON’s potential for enhancing the performance of high-voltage, high-power SiC devices. Full article

Amorphous indium gallium zinc oxide (a-IGZO) is widely used as an oxide semiconductor in the electronics industry due to its low leakage current and high field-effect mobility. However, a-IGZO suffers from notable limitations, including crystallization at temperatures above 600 °C and the high cost of indium. To address these issues, nitrogen-doped zinc oxynitride (ZnON), which can be processed at room temperature, has been proposed. Nitrogen in ZnON effectively reduces oxygen vacancies (V_O), resulting in enhanced field-effect mobility and improved stability under positive bias stress (PBS) compared to IGZO. In this study, selective deep ultraviolet femtosecond (DUV fs) laser annealing was applied to the channel region of ZnON thin-film transistors (TFTs), enabling rapid threshold voltage (Vth) modulation within microseconds, without the need for vacuum processing. Based on the electrical characteristics of both Vth-modulated and pristine ZnON TFTs, an NMOS inverter was fabricated, demonstrating reliable performance. These results suggest that laser annealing is a promising technique, applicable to various logic circuits and electronic devices. Full article

During the last few years, the requirements for highly efficient, sustainable, and versatile materials in modern biomedicine, aircraft and aerospace industries, automotive production, and electronic and electrical engineering applications have increased. This has led to the development of new and innovative methods for material modification and optimization. This can be achieved in many different ways, but one such approach is the application of surface thin films. They can be conductive (metallic), semi-conductive (metal-ceramic), or isolating (polymeric). Special emphasis is placed on applying semi-conductive thin films due to their unique properties, be it electrical, chemical, mechanical, or other. The particular thin films of interest are composite ones of the type of transition metal oxide (TMO) and transition metal nitride (TMN), due to their widespread configurations and applications. Regardless of the countless number of studies regarding the application of such films in the aforementioned industrial fields, some further possible investigations are necessary to find optimal solutions for modern problems in this topic. One such problem is the possibility of characterization of the applied thin films, not via textbook approaches, but through a simple, modern solution using their electrical properties. This can be achieved on the basis of measuring the films’ electrical impedance, since all different semi-conductive materials have different impedance values. However, this is a huge practical work that necessitates the collection of a large pool of data and needs to be based on well-established methods for both characterization and formation of the films. A thorough review on the topic of applying thin films using physical vapor deposition techniques (PVD) in the field of different modern applications, and the current results of such investigations are presented. Furthermore, current research regarding the possible methods for applying such films, and the specifics behind them, need to be summarized. Due to this, in the present work, the specifics of applying thin films using PVD methods and their expected structure and properties were evaluated. Special emphasis was paid to the electrical impedance spectroscopy (EIS) method, which is typically used for the investigation and characterization of electrical systems. This method has increased in popularity over the last few years, and its applicability in the characterization of electrical systems that include thin films formed using PVD methods was proven many times over. However, a still lingering question is the applicability of this method for backwards engineering of thin films. Currently, the EIS method is used in combination with traditional techniques such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX), and others. There is, however, a potential to predict the structure and properties of thin films using purely a combination of EIS measurements and complex theoretical models. The current progress in the development of the EIS measurement method was described in the present work, and the trend is such that new theoretical models and new practical testing knowledge was obtained that help implement the method in the field of thin films characterization. Regardless of this progress, much more future work was found to be necessary, in particular, practical measurements (real data) of a large variety of films, in order to build the composition–structure–properties relationship. Full article

Background/Objectives: The increasing demand for aesthetics in dentistry has driven significant advancements in both materials and techniques. The primary cause of ceramic detachment in dental restorations is extensive mechanical stress, which often results in detachment and clinical complications. This study aims to improve the bond strength between NiCr-based metal frameworks and ceramic coatings by introducing biocompatible inorganic MeSiON thin films (Me = Cr or Zr) as interlayers. Methods: MeSiON coatings with a thickness of ~2 μm were deposited on NiCr alloy using cathodic arc evaporation. To tailor the stoichiometry, morphology, and mechanical properties of the coatings, the substrate bias voltage was varied: −50 V, −100 V, −150 V, −200 V. Structural and surface characterization was performed using SEM/EDS, XRD, profilometry, and contact angle analysis. The coating adhesion was evaluated by using standardized scratch testing, while the bond strength was evaluated using a three-point bending test. Results: The NiCr alloy exhibited a dendritic microstructure, and the ceramic layer consisted mainly of quartz, feldspar, kaolin, and ZrO₂. ZrSiON coatings showed superior roughness, elemental incorporation, and adhesion compared to Cr-based coatings, these properties being further improved by increasing the substrate bias. The highest bond strength was achieved with a ZrSiON coating deposited at −200 V, a result we attributed to increased surface roughness and mechanical interlocking at the ceramic-metal interface. Conclusions: CrSiON and ZrSiON interlayers enhanced ceramic-to-metal adhesion in NiCr-based dental restorations. The enhancement in bond strength is primarily ascribed to substrate bias-induced modifications in the coating’s stoichiometry, roughness, and adhesion. Full article

Silicon oxynitride (SiO_xN_y, hereafter denoted as SiON) thin films represent an intermediate phase between silicon dioxide (SiO₂) and silicon nitride (Si₃N₄). Through systematic compositional ratio adjustments, the refractive index can be precisely tuned across a wide range from 1.45 to 2.3. However, the underlying mechanism governing the influence of elemental composition on film structural quality remains insufficiently understood. To address this knowledge gap, we systematically investigate the effects of key industrial plasma-enhanced chemical vapor deposition (PECVD) parameters—including precursor gas selection and flow rate ratios—on SiON film properties. Our experimental measurements reveal that stoichiometric SiO_xN_y (x = y) achieves a minimum surface roughness of 0.18 nm. As oxygen content decreases and nitrogen content increases, progressive replacement of Si-O bonds by Si-N bonds correlates with increased structural defect density within the film matrix. Capacitance–voltage (C-V) characterization demonstrates a corresponding enhancement in device capacitance following these compositional modifications. Recent studies confirm that controlled modulation of film stoichiometry enables precise tailoring of dielectric properties and capacitive behavior, as demonstrated in SiON-based power electronics, thereby advancing applications in related fields. Full article

A novel Ti-N-O composite was prepared by powder nitriding/oxynitriding combined with the spark plasma sintering (SPS) method. The effects of N/O on the microstructure and mechanical properties of the Ti-N-O alloy were systematically studied. The results showed that the addition of N/O elements significantly improved the mechanical properties of commercially pure titanium (cp-Ti). The hardness reached 298.8 HV0.1 while the yield strength can reach 666 MPa. And, the O element played a leading role in regulating the microstructure and morphology of the Ti-N-O alloy. With the addition of the O element, the microstructure showed an equiaxed structure, and the characterization showed that this region is an O-enriched region, and that a small amount of nano-TiO₂ particles appeared in the alloy, which together led to the change in the microstructure. At the same time, more large-angle grain boundaries were generated in the Ti-N-O alloy. This study investigated a new method for the preparation of titanium materials and provides new ideas for researching medical titanium materials. Full article

Titanium oxynitride (TiNO) thin films represent a multifaceted material system applicable in diverse fields, including energy storage, solar cells, sensors, protective coatings, and electrocatalysis. This study reports the synthesis of TiNO thin films grown at different substrate temperatures using pulsed laser deposition. A comprehensive structural investigation was conducted by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Non-Rutherford backscattering spectrometry (N-RBS), and X-ray absorption spectroscopy (XAS), which facilitated a detailed analysis that determined the phase, composition, and crystallinity of the films. Structural control was achieved via temperature-dependent oxygen in-diffusion, nitrogen out-diffusion, and the nucleation growth process related to adatom mobility. The XPS analysis indicates that the TiNO films consist of heterogeneous mixtures of TiN, TiNO, and TiO₂ phases with temperature-dependent relative abundances. The correlation between the structure and electrochemical behavior of the thin films was examined. The TiNO films with relatively higher N/O ratio, meaning less oxidized, were more electrochemically active than the films with lower N/O ratio, i.e., more oxidized films. Films with higher oxidation levels demonstrated enhanced crystallinity and greater stability under electrochemical polarization. These findings demonstrate the importance of substrate temperature control in tailoring the properties of TiNO film, which is a fundamental part of designing and optimizing an efficient electrode material. Full article

This work studied the effect of self-protective paste nitriding (SPN) and ion plasma nitriding (IPN) on the surface chemistry, microstructure, and nanohardness of AISI 304 and 316L stainless steels, with both treated at 440 °C for 5 h. Surface modifications analyzed using SEM and nanoindentation revealed distinct outcomes. SPN induced an oxynitriding effect due to the oxidation properties of the pastes, forming Fe₃O₄ and Fe_xC phases, while IPN produced an expanded austenite layer. Both methods enhanced surface nanohardness, but SPN showed superior results. For 316L SS, SPN increased nanohardness by 367.81% (6.83 GPa) compared to a 133.5% increase (3.41 GPa) with IPN. For 304 SS, SPN improved nanohardness by 26% (2.23 GPa), whereas IPN reduced it by 48% (0.92 GPa). These findings highlight SPN’s potential as an effective anti-wear treatment, particularly for 316L SS. The SPN process utilized a eutectic mixture of sodium cyanate and sodium carbonate, while IPN employed a N₂:H₂ (1:1) gas mixture. SEM analyses confirmed the formation of γ-Fe(N) phases, indicating dispersed iron nitrides (FeN, Fe₃N, Fe₄N). SPN’s simultaneous oxidation and nitrocarburization led to an oxide layer above the nitride diffusion layer, enhancing mechanical properties through iron oxides (Fe₃O₄) and carbides (Fe_xC). Comparative analysis showed that AISI 316L exhibited better performance than AISI 304, underscoring SPN’s effectiveness for surface modification. Full article

This study investigates the effects of substrate bias voltage on the properties of titanium nitride (TiN) and titanium oxynitride (TiON) thin films deposited via High-Power Impulse Magnetron Sputtering (HiPIMS). The structure and morphology of the obtained coatings were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). TiN coatings exhibited hydrophilic behavior, while TiON coatings demonstrated hydrophobic characteristics. Electrochemical corrosion testing in Hank’s solution revealed superior corrosion resistance for TiON films deposited at −100 V, indicating their potential for biomedical applications. The observed differences in wettability and corrosion resistance are attributed to the influence of substrate bias voltage on the films’ microstructure and surface chemistry. Full article

High-performance facet couplers are essential components in the field of silicon nitride integrated photonic chips. In this work, a novel end-face coupling structure, using a double-layer SiO_xN thin-film waveguide, is proposed. By precisely controlling the thickness and gap of the SiO_xN layers, we achieve flexible tuning of the output mode field size. This structure offers exceptional performance, including ultra-low coupling loss (TE: 0.29 dB, TM: 0.31 dB), large 3 dB alignment tolerance (±2.5 μm), and near-zero polarization-dependent loss. The optimized design strikes a favorable balance between coupling efficiency and alignment tolerance, making it well-suited for a wide range of photonic applications. Full article