Search Results (36)

Crystalline coatings have emerged as a promising alternative to amorphous mirror coatings for planned upgrades of second-generation detectors such as Advanced Virgo and for future 3G observatories. In this work, we investigate the structural and mechanical properties of epitaxial Cr₂O₃ thin films grown on c-plane sapphire by molecular beam epitaxy, with the objective of evaluating corundum-structured oxides as a new class of crystalline coating materials for gravitational wave interferometers. We report, for the first time, cryogenic mechanical loss measurements of Cr₂O₃ coatings and relate the measured dissipation to their crystalline quality. The structural and mechanical properties of the coatings were evaluated by XRD, RHEED, AFM, and GeNS measurements. Our findings show that the highest-quality chromia layers exhibit mechanical losses at 6 K as low as $(5\pm 1)$ × 10⁻⁶ rad, while poorer crystalline quality is associated with significantly higher losses. These results demonstrate the potential of corundum-structured oxides as mirror coatings for next-generation interferometers. The wide availability of corundum-structured oxides (X₂O₃ with X = Al, Ga, Fe, V, Cr, Ti, …) and their epitaxial compatibility with sapphire, including the possibility of forming solid solutions, further highlights the potential of this largely unexplored materials class. Full article

This study reports the growth and structural analysis of β-Ga₂O₃ films on 4° off-axis (000±1) Si- and C-face 4H-SiC substrates by plasma-assisted molecular-beam epitaxy (PAMBE). Pre-growth treatments of 4H-SiC substrates were conducted by employing: (I) unintentional oxygen exposure, (II) intentional Ga pre-exposure, (III) a Ga flash-off process followed by Ga pre-exposure, and (IV) intentional oxygen-plasma pre-exposure prior to β-Ga₂O₃ growth, which led to different growth behaviors. The intentional Ga pre-exposure and Ga flash-off followed by Ga pre-exposure treatments modified the initial Si-face surface condition and were consistent with the mitigation of oxygen-induced surface degradation, including possible SiO_x-related effects. In contrast, unintentional oxygen exposure and intentional oxygen-plasma pre-exposure produced RHEED evolution consistent with substantial surface disordering and possible amorphous SiO_x formation on the Si-face 4H-SiC substrate, leading to disordered nucleation and degraded film growth. Growth on the C-face 4H-SiC substrate resulted in more ordered β-Ga₂O₃ films, suggesting that the C-face surface is less susceptible to SiO_x-related degradation under the present oxygen-containing growth environment. The combined in situ RHEED, AFM, and HRXRD results indicate that substrate polarity and pre-growth surface treatments strongly influence the initial nucleation, morphology, and crystalline quality of β-Ga₂O₃ films on 4H-SiC. These findings provide a useful strategy for controlling oxide film growth on easily oxidized substrates under oxygen environments. Full article

Transition metal oxides constitute an important materials platform for chromic phenomena because their optical response is strongly coupled to the changes in electronic structure, phase state, carrier concentration, and defect chemistry. This review discusses selected transition metal oxide thin films, with emphasis on VO₂ and other vanadium oxides, WO₃, NiO, and TiO₂. The review summarizes the structural and electronic characteristics of these representative oxide systems and highlights the role of phase composition, crystal structure, oxygen non-stoichiometry, and defect chemistry in determining their optical response. The main thin film preparation routes, including pulsed laser deposition, magnetron sputtering, sol–gel and aerosol spray methods, atomic layer deposition, chemical vapor deposition, electrochemical routes, and molecular beam epitaxy, are reviewed with respect their influence on obtained thin films. Particular attention is given to applications in thermochromic VO₂-and electrochromic WO₃/NiO-based smart windows, and transition metal oxide-based gasochromic hydrogen sensors. Key challenges related to transition temperature tuning, luminous transmittance, solar modulation, optical contrast, cycling stability, ion transport and large-area integration are also discussed. Overall this review provides a comparative overview of selected transition metal oxide thin films by connecting material chemistry and physics, thin film preparation technology and functionality. Full article

Since the first successful synthesis of borophene in 2015, this atomically thin boron allotrope has attracted extensive attention due to its polymorphic structures, metallic conductivity, and outstanding mechanical flexibility. As a new member of the two-dimensional (2D) materials family, borophene exhibits a unique triangular lattice with tunable hexagonal vacancies, leading to rich structural diversity and anisotropic physical properties. Recent breakthroughs in synthesis—particularly molecular beam epitaxy (MBE), chemical vapor deposition (CVD), and solvothermal-assisted liquid-phase exfoliation (S-LPE)—have significantly expanded the accessible structural phases and improved control over film quality and stability. Meanwhile, borophene’s distinctive combination of structural and electronic characteristics has enabled its rapid development in both energy and biomedical applications. In energy storage, borophene serves as a promising anode material for lithium/sodium-ion batteries and a lightweight medium for hydrogen storage and supercapacitors, owing to its metallic conductivity, high surface charge density, and large adsorption capacity. In biomedicine, borophene-based nanoplatforms exhibit excellent photothermal conversion efficiency, enabling multifunctional roles in cancer diagnosis and therapy. Despite these advances, several challenges—such as environmental instability, oxidation susceptibility, and limited scalable synthesis—continue to restrict practical implementation. Future progress will depend on chemical functionalization, surface passivation, and machine-learning-assisted materials design to achieve oxidation-resistant, large-area, and biocompatible borophene derivatives. This review summarizes recent advances in borophene synthesis, structural engineering, and multifunctional applications, while outlining key scientific challenges and future opportunities for the realization of borophene-based materials in next-generation energy and biomedical systems. Full article

Vanadium dioxide (VO₂) is a highly promising material for infrared laser protection due to the pronounced optical switching effect during its metal–insulator transition (MIT). However, due to the relatively high MIT temperature of VO₂ and the low transmittance contrast before and after the MIT, practical applications face challenges in modulation depth and response time. In this study, we address these issues using a wafer-scale VO₂/GaN/Al₂O₃ heterostructure fabricated by oxide molecular beam epitaxy. The conductive GaN interlayer enables local Joule heating of the VO₂ film, permitting direct control of the MIT via an external bias with a threshold of 4.7 V. This structure exhibits a substantial resistance change of four orders of magnitude and enables adaptive limiting of a 3.7 μm laser, reducing transmittance from 60% to 10%. Our work demonstrates a practical, wafer-scale laser-protection device and introduces a pre-excitation strategy via external biasing to enhance response performance. Full article

Borophene, a two-dimensional (2D) allotrope of boron, has emerged as a highly promising material owing to its exceptional mechanical strength, electronic conductivity, and diverse structural phases. Unlike graphene and other 2D materials, borophene exhibits inherent anisotropy, flexibility, and metallicity, offering unique opportunities for advanced nanotechnological applications. This review presents a comprehensive summary of recent progress in borophene synthesis methods, highlighting both bottom–up strategies such as chemical vapor deposition (CVD) and molecular beam epitaxy (MBE), and top–down approaches, including liquid-phase exfoliation and sonochemical techniques. A key challenge discussed is the stabilization of borophene’s polymorphs, as bulk boron’s non-layered structure complicates exfoliation. The influence of substrates and doping strategies on structural stability and phase control is also explored. Moreover, the intrinsic physicochemical properties of borophene, including its high flexibility, oxidation resistance, and anisotropic charge transport, were examined in relation to their implications for electronic, catalytic, and sensing devices. Particular attention was given to borophene’s performance in hydrogen storage and hydrogen evolution reactions (HERs), where functionalization with alkali and transition metals significantly enhances H₂ adsorption energy and storage capacity. Studies demonstrate that certain borophene–metal composites, such as Ti- or Li-decorated borophene, can achieve hydrogen storage capacities exceeding 10 wt.%, surpassing the U.S. Department of Energy targets for hydrogen storage materials. Despite these promising characteristics, large-scale synthesis, long-term stability, and integration into practical systems remain open challenges. This review identifies current research gaps and proposes future directions to facilitate the development of borophene-based energy solutions. The findings support borophene’s strong potential as a next-generation material for clean energy applications, particularly in hydrogen production and storage systems. Full article

The monolithic integration of III-V semiconductors with silicon (Si) is a critical step toward advancing optoelectronic and photonic devices. In this work, we present GaAs nanoheteroepitaxy (NHE) on Si nanotips using gas-source molecular beam epitaxy (GS-MBE). We discuss the selective growth of fully relaxed GaAs nanoislands on complementary metal oxide semiconductor (CMOS)-compatible Si(001) nanotip wafers. Nanotip wafers were fabricated using a state-of-the-art 0.13 μm SiGe Bipolar CMOS pilot line on 200 mm wafers. Our investigation focuses on understanding the influence of the growth conditions on the morphology, crystalline structure, and defect formation of the GaAs islands. The morphological, structural, and optical properties of the GaAs islands were characterized using scanning electron microscopy, high-resolution X-ray diffraction, and photoluminescence spectroscopy. For samples with less deposition, the GaAs islands exhibit a monomodal size distribution, with an average effective diameter ranging between 100 and 280 nm. These islands display four distinct facet orientations corresponding to the {001} planes. As the deposition increases, larger islands with multiple crystallographic facets emerge, accompanied by a transition from a monomodal to a bimodal growth mode. Single twinning is observed in all samples. However, with increasing deposition, not only a bimodal size distribution occurs, but also the volume fraction of the twinned material increases significantly. These findings shed light on the growth dynamics of nanoheteroepitaxial GaAs and contribute to ongoing efforts toward CMOS-compatible Si-based nanophotonic technologies. Full article

We report the growth and optical characterization of single-crystal BiFe_1−xMn_xO₃ thin films directly on SrTiO₃/Si(001) substrates using molecular beam epitaxy. X-ray diffraction confirmed epitaxial growth, film crystallinity, and sharp interface quality. Scanning electron microscopy and energy dispersive X-ray spectroscopy verified uniform film morphology and successful Mn incorporation. Spectroscopic ellipsometry revealed a systematic bandgap reduction with increasing Mn concentration, from 2.7 eV in BiFeO₃ to 2.58 eV in BiFe_0.74Mn_0.26O₃, consistent with previous reports on Mn-doped BiFeO₃. These findings highlight the potential of BiFe₁₋_xMn_xO₃ films for bandgap engineering, advancing their integration into silicon-compatible multifunctional optoelectronic and photovoltaic applications. Full article

{CdO/ZnO}_m superlattices (SLs) have been grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PA-MBE). The observation of satellite peaks in the XRD studies of the as-grown and annealed samples confirms the presence of a periodic superlattice structure. The properties of as-grown and annealed SLs deposited on c-oriented sapphire were investigated by transmission electron microscopy, X-ray diffraction and temperature dependent PL studies. The deformation of the SLs structure was observed after rapid thermal annealing. As the thermal annealing temperature increases, the diffusion of Cd ions from the quantum well layers into the ZnO barrier increases. The formation of CdZnO layers causes changes in the luminescence spectrum in the form of peak shifts, broadening and changes in the spacing of the satellite peaks visible in X-ray analysis. Full article

Beta-phase gallium oxide (β-Ga₂O₃) is a cutting-edge ultrawide bandgap (UWBG) semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric field strength of about 8 MV/cm. These properties make it highly suitable for next-generation power electronics and deep ultraviolet optoelectronics. Key advantages of β-Ga₂O₃ include the availability of large-size single-crystal bulk native substrates produced from melt and the precise control of n-type doping during both bulk growth and thin-film epitaxy. A comprehensive understanding of the fundamental growth processes, control parameters, and underlying mechanisms is essential to enable scalable manufacturing of high-performance epitaxial structures. This review highlights recent advancements in the epitaxial growth of β-Ga₂O₃ through various techniques, including Molecular Beam Epitaxy (MBE), Metal-Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), Mist Chemical Vapor Deposition (Mist CVD), Pulsed Laser Deposition (PLD), and Low-Pressure Chemical Vapor Deposition (LPCVD). This review concentrates on the progress of Ga₂O₃ growth in achieving high growth rates, low defect densities, excellent crystalline quality, and high carrier mobilities through different approaches. It aims to advance the development of device-grade epitaxial Ga₂O₃ thin films and serves as a crucial resource for researchers and engineers focused on UWBG semiconductors and the future of power electronics. Full article

Rare-earth nitrides are an exciting family of materials with a wide variety of properties desirable for new physics and applications in spintronics and superconducting devices. Among them, samarium nitride is an interesting compound reported to have ferromagnetic behavior coupled with the potential existence of p-wave superconductivity. Synthesis of high-quality thin films is essential in order to manifest these behaviors and understand the impact that vacancies, structural distortions, and doping can have on these properties. In this study, we report the synthesis of samarium nitride monocrystalline thin films on magnesium oxide (001) substrates with a chromium nitride capping layer using molecular beam epitaxy (MBE). We observed a high-quality monocrystalline SmN film with matching orientation to the substrate, then optimized the growth temperature. Despite the initial 2 nm of growth showing formation of a potential samarium oxide layer, the subsequent layers showed high-quality SmN, with semiconducting behavior revealed by an increase in resistivity with decreasing temperature. These promising results highlight the importance of studying diverse heteroepitaxial schemes and open the door for integration of rare-earth nitrides and transition metal nitrides for future spintronic devices. Full article

The fabrication of trilayer superconductor-insulator-superconductor (SIS) Josephson junctions with high-temperature superconductor (HTS) electrodes requires atomically perfect interfaces. Therefore, despite great interest and efforts, this remained a challenge for over three decades. Here, we report the discovery of a new family of metastable materials, La_2−xSr_xZnO₄ (LSZO), synthesized by atomic-layer-by-layer molecular beam epitaxy (ALL-MBE). We show that LSZO is insulating and epitaxially compatible with an HTS compound, La_2−xSr_xCuO₄ (LSCO). Since the “parent” compound La₂ZnO₄ (LZO) is easier to grow, here we focus on this material as our insulating layer. Growing LZO at very low temperatures to reduce cation interdiffusion makes LSCO/LZO interfaces atomically sharp. We show that in LSCO/LZO/LSCO trilayers, the superconducting properties of the LSCO electrodes remain undiminished, unlike in previous attempts with insulator barriers made of other materials. This opens prospects to produce high-quality HTS tunnel junctions. Full article

The disintegration of a continuous metallic thin film leads to the formation of isolated islands, which can be used for the preparation of plasmonic structures. The transformation mechanism is driven by a thermally accelerated diffusion that leads to the minimalization of surface free energy in the system. In this paper, we report the results of our study on the disintegration of gold thin film and the formation of nanoislands on silicon substrates, both pure and with native silicon dioxide film. To study the processes leading to the formation of gold nanostructures and to investigate the effect of the oxide layer on silicon diffusion, metallic film with a thickness of 3 nm was deposited by molecular beam epitaxy (MBE) technique on both pure and oxidized silicon substrates. Transformation of the thin film was observed by low-energy electron microscopy (LEEM) and a scanning electron microscope (SEM), while the nanostructures formed were observed by atomic force microscope (AFM) method. Structural investigations were performed by low-energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS) methods. Our experiments confirmed a strong correlation between the formation of nanoislands and the presence of native oxide on silicon substrates. Full article

Three-dimensional topological insulators (3D-TIs) are a new generation of materials with insulating bulk and exotic metallic surface states that facilitate a wide variety of ground-breaking applications. However, utilization of the surface channels is often hampered by the presence of crystal defects, such as antisites, vacancies, and twin domains. For terahertz device applications, twinning is shown to be highly deleterious. Previous attempts to reduce twins using technologically important InP(111) substrates have been promising, but have failed to completely suppress twin domains while preserving high structural quality. Here we report growth of twin-free molecular beam epitaxial Bi₂Se₃ and Sb₂Te₃ structures on ultra-thin In₂Se₃ layers formed by a novel selenium passivation technique during the oxide desorption of smooth, non-vicinal InP(111)B substrates, without the use of an indium source. The formation of un-twinned In₂Se₃ provides a favorable template to fully suppress twin domains in 3D-TIs, greatly broadening novel device applications in the terahertz regime. Full article

Type-II superlattices (T2SLs) are emerging as next-generation materials for infrared detectors. The epitaxial quality of T2SLs is of great importance to the performance of infrared detectors such as dark current and detectivity. Herein, we explore the effect of the native GaSb oxide layer on the surface morphology and crystal quality of InAs/GaSb T2SLs grown with molecular beam epitaxy. The experimental results demonstrate that the thickness of the oxidation layer on GaSb substrates gradually increases over time and is saturated at around 73 Å in the natural oxidation condition. Moreover, the oxidation process is sensitive to humidity. As the thickness of the GaSb oxide layer increases from 18.79 Å to 61.54 Å, the full width at half maximum of the first satellite peak increases from 38.44 to 61.34 arcsec in X-ray diffraction measurements, and the root mean square roughness increases from 0.116 nm to 0.171 nm in atomic force microscopy measurements. Our results suggest that the thickness of the GaSb oxide layer should be less than 55 Å to obtain smooth buffer layers and qualified superlattices. The work provides an optimized direction for achieving high-quality superlattices for infrared optoelectronic devices. Full article