In this work, Gallium Nitride (GaN)-based p-i-n diodes were designed using a computer aided design (TCAD) simulator for realizing a betavoltaic (BV) cell with a high output power density (Pout). The short-circuit current density (JSC) and open-circui...
In order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer. The strongly polarized and ultra-thin AlN sub-barrier and the InAlN sub-barrier are great...
In this study, structural optimization and trap effect analysis of a 4H-SiC–based p–i–n betavoltaic (BV) cell were performed using Silvaco ATLAS TCAD (version 5.30.0.R) simulations combined with an electron-beam (e-beam) irradiation...
The effect of different SiNx thicknesses on the performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated in this paper. The current, transconductance (Gm), cut-off frequency (fT), maximum oscillation frequency (fmax), powe...
In this work, sub-micron-thick AlN/GaN transistors (HEMTs) grown on a silicon substrate for high-frequency power applications are reported. Using molecular beam epitaxy, an innovative ultrathin step-graded buffer with a total stack thickness of 450 n...
To enhance the RF power properties of CMOS-compatible gold-free GaN devices, this work introduces a kind of GaN-on-Si HEMT with a low parasitic regrown ohmic contact technology. Attributed to the highly doped n+ InGaN regrown layer and smooth morphol...
A waste-originated one-part alkali-activated nanocomposite is introduced herein as a novel thermoelectric material. For this purpose, single-walled carbon nanotubes (SWCNTs) were utilized as nanoinclusions to create an electrically conductive network...
In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching patterns (OEPs) “fabricated to improve device radio frequency (RF) performance for Ka-band applications” are reported. The fabricated AlGaN/GaN HEMTs w...