Search Results (2,076)

Thermal management is an area of study in electronics focused on managing temperature to improve reliability and efficiency. When temperatures are too high, cooling systems are activated to prevent overheating, which can lead to reliability issues. To monitor the temperatures, sensors are often placed on-chip near hotspot locations. These sensors should be very small to allow them to be placed among compact, high-activity circuits. Often, they are connected to a central control circuit located far away from the hot spot locations where more area is available. This paper proposes sensing units for a novel temperature sensing architecture in the TSMC 180 nm process. This architecture functions by approximating the current through the sensing unit at a reference voltage, which is used to approximate the temperature in the digital back end using fitting functions. Sensing units are selected based on how well its temperature–current relationship can be modeled, sensing unit area, and power consumption. Many sensing units will be experimented with at different reference voltages. These temperature–current curves will be modeled with various fitting functions. The sensing unit selected is a diode-connected p-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a size of W = 400 nm, L = 180 nm. This sensing unit is exceptionally small compared to existing work because it does not rely on multiple devices at the sensing unit location to generate a PTAT or IPTAT signal like most work in this area. The temperature–current relationship of this device can also be modeled using a 2nd order polynomial, requiring a minimal number of trim temperatures. Its temperature error is small, and the power consumption is low. The range of currents for this sensing unit could be reasonably made on an IDAC. Full article

Gas sensors are considered a highly effective non-destructive technique for monitoring the quality and safety of food materials. These intelligent sensors can detect volatile profiles emitted by food products, providing valuable information on the changes occurring within the food. Gas sensors have garnered significant interest for their numerous advantages in the development of food safety monitoring systems. The adaptable characteristics of gas sensors make them ideal for integration into production lines, while the flexibility of certain sensor types allows for incorporation into packaging materials. Various types of gas sensors have been developed for their distinct properties and are utilized in a wide range of applications. Metal-oxide semiconductors and optical sensors are widely studied for their potential use as gas sensors in food quality assessments due to their ability to provide visual indicators to consumers. The advancement of new nanomaterials and their integration with advanced data acquisition techniques is expected to enhance the performance and utility of sensors in sustainable practices within the food supply chain. Full article

This paper presents the first hybrid supply modulator (HSM) designed for envelope tracking power amplifiers (ET-PAs) in base station applications. The focus is on a rail-to-rail Class-AB linear amplifier (LA) optimized for high-voltage and wide-bandwidth operation. The LA is designed using 130 nm BCD technology, utilizing Laterally Diffused Metal-Oxide Semiconductor (LDMOS) transistors for high-voltage operation and incorporating shielding MOSFETs to protect the low-voltage devices. The circuit utilizes dual power supply domains (5 V and 30 V) to improve power efficiency. The proposed LA achieves a bandwidth of 100 MHz and a slew rate of +1003/−852 V/$\mathsf{\mu }\mathrm{s}$, with a quiescent power consumption of 0.89 W. Transient simulations using a 50 MHz bandwidth 5G NR envelope input demonstrate that the proposed HSM achieves a power efficiency of 83%. Consequently, the proposed HSM supports high-output (100 W) wideband 5G NR transmission with enhanced efficiency. Full article

The development of an integrated circuit faces the challenge of the physical limit of Moore’s Law. One of the most important “Beyond Moore” challenges is the scaling down of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) versus their increasing static power consumption. This is because, at room temperature, the thermal emission transportation mechanism will cause a physical limitation on subthreshold swing (SS), which is fundamentally limited to a minimum value of 60 mV/decade for MOSFETs, and accompanied by an increase in off-state leakage current with the process of scaling down. Moreover, the impacts of short-channel effects on device performance also become an increasingly severe problem with channel length scaling down. Due to the band-to-band tunneling mechanism, Tunnel Field-Effect Transistors (TFETs) can reach a far lower SS than MOSFETs. Recent research works indicated that TFETs are already becoming some of the promising candidates of conventional MOSFETs for ultra-low-power applications. This paper provides a review of some advances in materials and structures along the evolutionary process of TFETs. An in-depth discussion of both experimental works and simulation works is conducted. Furthermore, the performance of TFETs with different structures and materials is explored in detail as well, covering Si, Ge, III-V compounds and 2D materials, alongside different innovative device structures. Additionally, this work provides an outlook on the prospects of TFETs in future ultra-low-power electronics and biosensor applications. Full article

In advanced Complementary Metal-Oxide-Semiconductor (CMOS) technologies, where diminished feature sizes amplify radiation-induced soft errors, the optimization of fault-tolerant circuit designs requires detailed transistor-level analysis of reliability–performance trade-offs. As a fundamental building block in digital systems and critical data paths, the 2:1 multiplexer, widely used in data-path routing, clock networks, and reconfigurable systems, provides a critical benchmark for assessing radiation-hardened design methodologies. In this context, this work aims to analyze the power consumption, area overhead, and delay of 2:1 multiplexer designs under transient fault conditions, employing the CMOS and Differential Cascode Voltage Switch Logic (DCVSL) logic styles and mitigation strategies. Electrical simulations were conducted using 32 nm high-performance predictive technology, evaluating both the original circuit versions and modified variants incorporating three mitigation strategies: transistor sizing, D-Cells, and C-Elements. Key metrics, including power consumption, delay, area, and radiation robustness, were analyzed. The C-Element and transistor sizing techniques ensure satisfactory robustness for all the circuits analyzed, with a significant impact on delay, power consumption, and area. Although the D-Cell technique alone provides significant improvements, it is not enough to achieve adequate levels of robustness. Full article

The stable operation of micromachine systems relies on reliable power management, where DC-DC converters provide energy with high efficiency to extend operational endurance. However, these converters also constitute significant electromagnetic interference (EMI) sources that may interfere with the normal functioning of micro-electromechanical systems. This paper proposes a boost converter utilizing Pulse Width Modulation (PWM) with peak current mode control to address the EMI issues inherent in the switching operation of DC-DC converters. The converter incorporates a Hybrid Spread Spectrum (HSS) technique to effectively mitigate EMI noise. The HSS combines a 1.2 MHz pseudo-random spread spectrum with a 9.4 kHz triangular periodic spread spectrum. At a standard switching frequency of 2 MHz, the spread spectrum range is set to ±7.8%. Simulations conducted using a 0.5 μm Bipolar Complementary Metal-Oxide-Semiconductor Double-diffused Metal-Oxide-Semiconductor (BCD) process demonstrate that the HSS technique reduces EMI around the switching frequency by 12.29 dBμV, while the converter’s efficiency decreases by less than 1%. Full article

In this study, the influence of HfO₂ interlayer thickness on the performance of heteroepitaxial α-Ga₂O₃ layer-based metal–insulator–semiconductor–insulator–metal (MISIM) ultraviolet photodetectors is examined. A thin HfO₂ interlayer enhances the interface quality and reduces the density of interface traps, thereby improving the performance of UVC photodetectors. The fabricated device with a 1 nm HfO₂ interlayer exhibited a significantly reduced dark current and higher photocurrent than a conventional metal–semiconductor–metal (MSM). Specifically, the 1 nm HfO₂ MISIM device demonstrated a photocurrent of 2.3 μA and a dark current of 6.61 pA at 20 V, whereas the MSM device exhibited a photocurrent of 1.1 μA and a dark current of 73.3 pA. Furthermore, the photodetector performance was comprehensively evaluated in terms of responsivity, response speed, and high-temperature operation. These results suggest that the proposed ultra-thin HfO₂ interlayer is an effective strategy for enhancing the performance of α-Ga₂O₃-based UVC photodetectors by simultaneously suppressing dark currents and increasing photocurrents and ultimately demonstrate its potential for stable operation under extreme environmental conditions. Full article

The early detection of liver cirrhosis (LC) is crucial due to its high morbidity and mortality in advanced stages. Reliable, non-invasive diagnostic tools are essential for timely intervention. Exhaled human breath, reflecting metabolic changes, offers significant potential for disease diagnosis. This paper focuses on the emerging role of sensor array-based volatile organic compounds (VOCs) analysis of exhaled breath, particularly using electronic nose (e-nose) technology to differentiate LC patients from healthy controls (HCs). This study included 55 participants: 27 LC patients and 28 HCs. Sensor’s measurement data were analyzed using machine learning techniques, such as principal component analysis (PCA), discriminant function analysis (DFA), and support vector machines (SVMs) that were utilized to uncover meaningful patterns and facilitate accurate classification of sensor-derived information. The diagnostic accuracy was thoroughly assessed through receiver operating characteristic (ROC) curve analysis, with specific emphasis on assessing sensitivity and specificity metrics. The e-nose effectively distinguished LC from HC, with PCA explaining 92.50% variance and SVMs achieving 100% classification accuracy. This study demonstrates the significant potential of e-nose technology towards VOCs analysis in exhaled breath, as a valuable tool for LC diagnosis. It also explores feature extraction methods and suitable algorithms for effectively distinguishing between LC patients and controls. This research provides a foundation for advancing breath-based diagnostic technologies for early detection and monitoring of liver cirrhosis. Full article

When a CMOS (Complementary Metal–Oxide–Semiconductor) imaging system operates at a high frame rate or a high line rate, the exposure time of the imaging system is limited, and the acquired image data will be dark, with a low signal-to-noise ratio and unsatisfactory sharpness. Therefore, in order to improve the visibility and signal-to-noise ratio of remote sensing images based on CMOS imaging systems, this paper proposes a low-light remote sensing image enhancement method and a corresponding ZYNQ (Zynq-7000 All Programmable SoC) design scheme called the BGIR (Bilateral-Guided Image Restoration) algorithm, which uses an improved multi-scale Retinex algorithm in the HSV (hue–saturation–value) color space. First, the RGB image is used to separate the original image’s H, S, and V components. Then, the V component is processed using the improved algorithm based on bilateral filtering. The image is then adjusted using the gamma correction algorithm to make preliminary adjustments to the brightness and contrast of the whole image, and the S component is processed using segmented linear enhancement to obtain the base layer. The algorithm is also deployed to ZYNQ using ARM + FPGA software synergy, reasonably allocating each algorithm module and accelerating the algorithm by using a lookup table and constructing a pipeline. The experimental results show that the proposed method improves processing speed by nearly 30 times while maintaining the recovery effect, which has the advantages of fast processing speed, miniaturization, embeddability, and portability. Following the end-to-end deployment, the processing speeds for resolutions of 640 × 480 and 1280 × 720 are shown to reach 80 fps and 30 fps, respectively, thereby satisfying the performance requirements of the imaging system. Full article

The monolithic integration of III-V semiconductors with silicon (Si) is a critical step toward advancing optoelectronic and photonic devices. In this work, we present GaAs nanoheteroepitaxy (NHE) on Si nanotips using gas-source molecular beam epitaxy (GS-MBE). We discuss the selective growth of fully relaxed GaAs nanoislands on complementary metal oxide semiconductor (CMOS)-compatible Si(001) nanotip wafers. Nanotip wafers were fabricated using a state-of-the-art 0.13 μm SiGe Bipolar CMOS pilot line on 200 mm wafers. Our investigation focuses on understanding the influence of the growth conditions on the morphology, crystalline structure, and defect formation of the GaAs islands. The morphological, structural, and optical properties of the GaAs islands were characterized using scanning electron microscopy, high-resolution X-ray diffraction, and photoluminescence spectroscopy. For samples with less deposition, the GaAs islands exhibit a monomodal size distribution, with an average effective diameter ranging between 100 and 280 nm. These islands display four distinct facet orientations corresponding to the {001} planes. As the deposition increases, larger islands with multiple crystallographic facets emerge, accompanied by a transition from a monomodal to a bimodal growth mode. Single twinning is observed in all samples. However, with increasing deposition, not only a bimodal size distribution occurs, but also the volume fraction of the twinned material increases significantly. These findings shed light on the growth dynamics of nanoheteroepitaxial GaAs and contribute to ongoing efforts toward CMOS-compatible Si-based nanophotonic technologies. Full article

The neurobiology of chronic pain is complex and multifaceted, intertwining with the mesocorticolimbic system to regulate the behavioral and perceptional response to adverse stimuli. Specifically, the ventral tegmental area (VTA), the dopaminergic hub of the reward pathways located deep within the midbrain, is crucial for regulating the release of dopamine (DA) throughout the central nervous system (CNS). To better understand the nuances among chronic pain, VTA response, and therapeutics, implementing progressive approaches for mapping and visualizing the deep brain in real time during nociceptive stimulation is crucial. In this study, we utilize a fluorescence imaging platform with a genetically encoded calcium indicator (GCaMP6s) to directly visualize activity in the VTA during acute nociceptive stimulation in both healthy adult mice and adult mice with partial nerve ligation (PNL)-induced neuropathic pain. We also investigate the visualization of the analgesic properties of morphine. Deep brain imaging using our self-fabricated µ-complementary metal–oxide–semiconductor (CMOS) imaging device allows the tracking of the VTA’s response to adverse stimuli. Our findings show that nociceptive stimulation is associated with a reduction in VTA fluorescence activity, supporting the potential of this platform for visualizing pain-related responses in the central nervous system. Additionally, treatment with morphine significantly reduces the neuronal response caused by mechanical stimuli and is observable using the CMOS imaging platform, demonstrating a novel way to potentially assess and treat neuropathic pain. Full article

Graphitic carbon nitride (g-C₃N₄) is emerging as one of the most promising non-metallic semiconductors for the degradation of pollutants in water by photocatalytic processes. Its exceptional reduction–oxidation (redox) potentials and adequate band gap of approximately 2.7 eV give it the ability to absorb in the visible light range. However, the characteristic sensitivity to light absorption is limited, leading to rapid recombination of electron–hole pairs. Therefore, different strategies have been explored to optimize this charge separation, among which the formation of heterostructures based on g-C₃N₄ is highlighted. This review addresses recent advances in photocatalysis mediated by g-C₃N₄ heterostructures, considering the synthesis methods enabling the optimization of the morphology and active interface of these materials. Next, the mechanisms of charge transfer are discussed in detail, with special emphasis on type II, type S, and type Z classifications and their influence on the efficiency of photodegradation. Subsequently, the progress in the application of these photocatalysts for the degradation of water pollutants, such as toxic organic dyes, pharmaceutical pollutants, pesticides, and per- and polyfluoroalkyl substances (PFAS), are analyzed, highlighting both experimental advances and remaining challenges. Finally, future perspectives oriented towards the optimization of heterostructures, the efficiency of synthesis methods, and the practical application of these in photocatalytic processes for environmental remediation. Full article

The use of CH₄ as an energy source is increasing every day. To increase the efficiency of CH₄ combustion and ensure that the equipment meets ecological requirements, it is necessary to measure the CH₄ concentration in the exhaust gases of combustion systems. To this end, sensors are required that can withstand extreme operating conditions, including temperatures of at least 600 °C, as well as high pressure and gas flow rate. ZnGa₂O₄, being an ultra-wide bandgap semiconductor with high chemical and thermal stability, is a promising material for such sensors. The synthesis and investigation of the structural and CH₄ sensing properties of ceramic pellets made from pure and Er-doped ZnGa₂O₄ were conducted. Doping with Er leads to the formation of a secondary Er₃Ga₅O₁₂ phase and an increase in the active surface area. This structural change significantly enhanced the CH₄ response, demonstrating an 11.1-fold improvement at a concentration of 10⁴ ppm. At the optimal response temperature of 650 °C, the Er-doped ZnGa₂O₄ exhibited responses of 2.91 a.u. and 20.74 a.u. to 100 ppm and 10⁴ ppm of CH₄, respectively. The Er-doped material is notable for its broad dynamic range for CH₄ concentrations (from 100 to 20,000 ppm), low sensitivity to humidity variations within the 30–70% relative humidity range, and robust stability under cyclic gas exposure. In addition to CH₄, the sensitivity of Er-doped ZnGa₂O₄ to other gases at a temperature of 650 °C was investigated. The samples showed strong responses to C₂H₄, C₃H₈, C₄H₁₀, NO_2, and H₂, which, at gas concentrations of 100 ppm, were higher than the response to CH₄ by a factor of 2.41, 2.75, 3.09, 1.16, and 1.64, respectively. The study proposes a plausible mechanism explaining the sensing effect of Er-doped ZnGa₂O₄ and discusses its potential for developing high-temperature CH₄ sensors for applications such as combustion monitoring systems and determining the ideal fuel/air mixture. Full article

Graphite carbon nitride (g-C₃N₄) is a low band gap non-metallic polymer semiconductor that has broad application prospects and is an ideal material for absorbing visible light, as g-C₃N₄ materials have strong oxidation properties and are easy to modify. The structure formation of g-C₃N₄-based materials makes a series of photocatalytic synthesis reactions possible and improves photocatalytic reaction activity. In this paper, the development history, structures, and performance of g-C₃N₄ are briefly introduced, and the modification strategies of g-C₃N₄ are summarized to improve its photocatalytic and photoelectric catalytic properties via doping, heterojunction construction, etc. The light absorption and utilization of the catalysts are also analyzed in terms of light source conditions, and the application of g-C₃N₄ and its modified materials in photocatalysis and photocatalytic degradation is reviewed. Full article

This study investigates the application of additive manufacturing (AM) in fabricating transverse thermoelectric (TTE) composites, demonstrating the feasibility of this methodology for TTE material synthesis. Zinc oxide (ZnO), a wide-bandgap semiconductor with moderate thermoelectric performance, and copper (Cu), a highly conductive metal, were selected as base materials. These were formulated into stable paste-like feedstocks for direct ink writing (DIW). A custom dual-nozzle 3D printer was developed to precisely deposit these materials in pre-designed architectures. The resulting structures exhibited measurable transverse Seebeck effects. Unlike prior TE research primarily focused on longitudinal configurations, this work demonstrates a novel AM-enabled strategy that integrates directional compositional anisotropy, embedded metal–semiconductor interfaces, and scalable multi-material printing to realize TTE behavior. The approach offers a cost-effective and programmable pathway toward next-generation energy harvesting and thermal management systems. Full article