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2 Results Found

  • Article
  • Open Access
1 Citations
2,381 Views
15 Pages

Surface Termination and Morphology of Single Crystal AlN by Ex Situ Chemical Treatment and In Situ MOCVD Process

  • Yinghao Chen,
  • Jun Zhang,
  • Genhao Liang,
  • Hongyi Yi,
  • Lei Wang,
  • Hao Ying and
  • Lishan Zhao

13 February 2026

To achieve an atomically clean surface of single-crystal aluminum nitride (AlN) substrates, this study systematically evaluated the effects of each step in ex situ wet chemical cleaning (solvent, piranha solution, HF, HCl) and in situ hydrogen anneal...

  • Article
  • Open Access
8 Citations
8,055 Views
11 Pages

Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

  • Jongwan Jung,
  • Baegmo Son,
  • Byungmin Kam,
  • Yong Sang Joh,
  • Woonyoung Jeong,
  • Seongjae Cho,
  • Won-Jun Lee and
  • Sangjoon Park

3 July 2021

The key process steps for growing high-quality Si-based epitaxial films via reduced pressure chemical vapor deposition (RPCVD) are investigated herein. The quality of the epitaxial films is largely affected by the following steps in the epitaxy proce...

(This article belongs to the Section Thin Films and Interfaces)