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Keywords = band gap characteristics

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22 pages, 5844 KiB  
Article
Scaling, Leakage Current Suppression, and Simulation of Carbon Nanotube Field-Effect Transistors
by Weixu Gong, Zhengyang Cai, Shengcheng Geng, Zhi Gan, Junqiao Li, Tian Qiang, Yanfeng Jiang and Mengye Cai
Nanomaterials 2025, 15(15), 1168; https://doi.org/10.3390/nano15151168 - 28 Jul 2025
Viewed by 362
Abstract
Carbon nanotube field-effect transistors (CNTFETs) are becoming a strong competitor for the next generation of high-performance, energy-efficient integrated circuits due to their near-ballistic carrier transport characteristics and excellent suppression of short-channel effects. However, CNT FETs with large diameters and small band gaps exhibit [...] Read more.
Carbon nanotube field-effect transistors (CNTFETs) are becoming a strong competitor for the next generation of high-performance, energy-efficient integrated circuits due to their near-ballistic carrier transport characteristics and excellent suppression of short-channel effects. However, CNT FETs with large diameters and small band gaps exhibit obvious bipolarity, and gate-induced drain leakage (GIDL) contributes significantly to the off-state leakage current. Although the asymmetric gate strategy and feedback gate (FBG) structures proposed so far have shown the potential to suppress CNT FET leakage currents, the devices still lack scalability. Based on the analysis of the conduction mechanism of existing self-aligned gate structures, this study innovatively proposed a design strategy to extend the length of the source–drain epitaxial region (Lext) under a vertically stacked architecture. While maintaining a high drive current, this structure effectively suppresses the quantum tunneling effect on the drain side, thereby reducing the off-state leakage current (Ioff = 10−10 A), and has good scaling characteristics and leakage current suppression characteristics between gate lengths of 200 nm and 25 nm. For the sidewall gate architecture, this work also uses single-walled carbon nanotubes (SWCNTs) as the channel material and uses metal source and drain electrodes with good work function matching to achieve low-resistance ohmic contact. This solution has significant advantages in structural adjustability and contact quality and can significantly reduce the off-state current (Ioff = 10−14 A). At the same time, it can solve the problem of off-state current suppression failure when the gate length of the vertical stacking structure is 10 nm (the total channel length is 30 nm) and has good scalability. Full article
(This article belongs to the Special Issue Advanced Nanoscale Materials and (Flexible) Devices)
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10 pages, 1873 KiB  
Article
Stacking Order-Dependent Electronic and Optical Properties of h-BP/Borophosphene Van Der Waals Heterostructures
by Kejing Ren, Quan Zhang, Shengli Zhang and Yang Zhang
Nanomaterials 2025, 15(15), 1155; https://doi.org/10.3390/nano15151155 - 25 Jul 2025
Viewed by 197
Abstract
Van der Waals (vdW) heterostructures, typically composed of two-dimensional (2D) atomic layers, have attracted significant attention over the past few decades. Their performance is closely dependent on their composition and interlayer interactions. In this study, we constructed four types of 2D hexagonal BP [...] Read more.
Van der Waals (vdW) heterostructures, typically composed of two-dimensional (2D) atomic layers, have attracted significant attention over the past few decades. Their performance is closely dependent on their composition and interlayer interactions. In this study, we constructed four types of 2D hexagonal BP monolayer (h-BP)/borophosphene vdW heterostructures with different stacking orders: (i) B-B stacking, (ii) P-P stacking, (iii) moire-I, and (iv) moire-II. Their structural stability and their electronic and optical properties were explored by using first-principles calculations. The results show that h-BP/borophosphene heterostructures can maintain their configurations with good structural stability and minimal lattice mismatch. All vdW heterostructures exhibit semiconducting characteristics, and their band gaps are highly dependent on interlayer stacking orders. Due to the regular atomic arrangement and enhanced interlayer dipole interactions, the B-B stacking bilayer opens a relatively large band gap of 0.157 eV, while the moire-II bilayer exhibits a very small band gap of 0.045 eV because of its irregular atom arrangements. By calculating the complex dielectric function, optical absorption spectra of B-B and P-P stacking bilayers were discussed. This study suggests that h-BP/borophosphene heterostructures have desirable optical properties, broadening the potential applications of the constituent monolayers. Full article
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16 pages, 8045 KiB  
Article
Modification of G-C3N4 by the Surface Alkalinization Method and Its Photocatalytic Depolymerization of Lignin
by Zhongmin Ma, Ling Zhang, Lihua Zang and Fei Yu
Materials 2025, 18(14), 3350; https://doi.org/10.3390/ma18143350 - 17 Jul 2025
Viewed by 315
Abstract
The efficient depolymerization of lignin has become a key challenge in the preparation of high-value-added chemicals. Graphitic carbon nitride (g-C3N4)-based photocatalytic system shows potential due to its mild and green characteristics over other depolymerization methods. However, its inherent defects, [...] Read more.
The efficient depolymerization of lignin has become a key challenge in the preparation of high-value-added chemicals. Graphitic carbon nitride (g-C3N4)-based photocatalytic system shows potential due to its mild and green characteristics over other depolymerization methods. However, its inherent defects, such as a wide band gap and rapid carrier recombination, severely limit its catalytic performance. In this paper, a g-C3N4 modification strategy of K⁺ doping and surface alkalinization is proposed, which is firstly applied to the photocatalytic depolymerization of the lignin β-O-4 model compound (2-phenoxy-1-phenylethanol). K⁺ doping is achieved by introducing KCl in the precursor thermal polymerization stage to weaken the edge structure strength of g-C3N4, and post-treatment with KOH solution is combined to optimize the surface basic groups. The structural/compositional evolution of the materials was analyzed by XRD, FTIR, and XPS. The morphology/element distribution was visualized by SEM-EDS, and the optoelectronic properties were evaluated by UV–vis DRS, PL, EIS, and transient photocurrent (TPC). K⁺ doping and surface alkalinization synergistically regulate the layered structure of the material, significantly increase the specific surface area, introduce nitrogen vacancies and hydroxyl functional groups, effectively narrow the band gap (optimized to 2.35 eV), and inhibit the recombination of photogenerated carriers by forming electron capture centers. Photocatalytic experiments show that the alkalinized g-C3N4 can completely depolymerize 2-phenoxy-1-phenylethanol with tunable product selectivity. By adjusting reaction time and catalyst dosage, the dominant product can be shifted from benzaldehyde (up to 77.28% selectivity) to benzoic acid, demonstrating precise control over oxidation degree. Mechanistic analysis shows that the surface alkaline sites synergistically optimize the Cβ-O bond breakage path by enhancing substrate adsorption and promoting the generation of active oxygen species (·OH, ·O2). This study provides a new idea for the efficient photocatalytic depolymerization of lignin and lays an experimental foundation for the interface engineering and band regulation strategies of g-C3N4-based catalysts. Full article
(This article belongs to the Section Catalytic Materials)
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21 pages, 9529 KiB  
Article
Development of a Highly Reliable PbS QDs-Based SWIR Photodetector Based on Metal Oxide Electron/Hole Extraction Layer Formation Conditions
by JinBeom Kwon, Yuntae Ha, Suji Choi and Donggeon Jung
Nanomaterials 2025, 15(14), 1107; https://doi.org/10.3390/nano15141107 - 16 Jul 2025
Viewed by 308
Abstract
Recently, with the development of automation technology in various fields, much research has been conducted on infrared photodetectors, which are the core technology of LiDAR sensors. However, most infrared photodetectors are expensive because they use compound semiconductors based on epitaxial processes, and they [...] Read more.
Recently, with the development of automation technology in various fields, much research has been conducted on infrared photodetectors, which are the core technology of LiDAR sensors. However, most infrared photodetectors are expensive because they use compound semiconductors based on epitaxial processes, and they have low safety because they use the near-infrared (NIR) region that can damage the retina. Therefore, they are difficult to apply to automation technologies such as automobiles and factories where humans can be constantly exposed. In contrast, short-wavelength infrared photodetectors based on PbS QDs are actively being developed because they can absorb infrared rays in the eye-safe region by controlling the particle size of QDs and can be easily and inexpensively manufactured through a solution process. However, PbS QDs-based SWIR photodetectors have low chemical stability due to the electron/hole extraction layer processed by the solution process, making it difficult to manufacture them in the form of patterning and arrays. In this study, bulk NiO and ZnO were deposited by sputtering to achieve uniformity and patterning of thin films, and the performance of PbS QDs-based photodetectors was improved by optimizing the thickness and annealing conditions of the thin films. The fabricated photodetector achieved a high response characteristic of 114.3% through optimized band gap and improved transmittance characteristics. Full article
(This article belongs to the Special Issue Quantum Dot Materials and Their Optoelectronic Applications)
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38 pages, 6778 KiB  
Review
Challenges and Opportunities for g-C3N4-Based Heterostructures in the Photodegradation of Environmental Pollutants
by Eduardo Estrada-Movilla, Jhonathan Castillo-Saenz, Benjamín Valdez-Salas, Álvaro Ortiz-Pérez, Ernesto Beltrán-Partida, Jorge Salvador-Carlos and Esneyder Puello-Polo
Catalysts 2025, 15(7), 653; https://doi.org/10.3390/catal15070653 - 4 Jul 2025
Viewed by 646
Abstract
Graphitic carbon nitride (g-C3N4) is emerging as one of the most promising non-metallic semiconductors for the degradation of pollutants in water by photocatalytic processes. Its exceptional reduction–oxidation (redox) potentials and adequate band gap of approximately 2.7 eV give it [...] Read more.
Graphitic carbon nitride (g-C3N4) is emerging as one of the most promising non-metallic semiconductors for the degradation of pollutants in water by photocatalytic processes. Its exceptional reduction–oxidation (redox) potentials and adequate band gap of approximately 2.7 eV give it the ability to absorb in the visible light range. However, the characteristic sensitivity to light absorption is limited, leading to rapid recombination of electron–hole pairs. Therefore, different strategies have been explored to optimize this charge separation, among which the formation of heterostructures based on g-C3N4 is highlighted. This review addresses recent advances in photocatalysis mediated by g-C3N4 heterostructures, considering the synthesis methods enabling the optimization of the morphology and active interface of these materials. Next, the mechanisms of charge transfer are discussed in detail, with special emphasis on type II, type S, and type Z classifications and their influence on the efficiency of photodegradation. Subsequently, the progress in the application of these photocatalysts for the degradation of water pollutants, such as toxic organic dyes, pharmaceutical pollutants, pesticides, and per- and polyfluoroalkyl substances (PFAS), are analyzed, highlighting both experimental advances and remaining challenges. Finally, future perspectives oriented towards the optimization of heterostructures, the efficiency of synthesis methods, and the practical application of these in photocatalytic processes for environmental remediation. Full article
(This article belongs to the Special Issue Design and Synthesis of Nanostructured Catalysts, 3rd Edition)
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12 pages, 3225 KiB  
Article
Multiple Slater Determinants and Strong Spin-Fluctuations as Key Ingredients of the Electronic Structure of Electron- and Hole-Doped Pb10−xCux(PO4)6O
by Dimitar Pashov, Swagata Acharya, Stephan Lany, Daniel S. Dessau and Mark van Schilfgaarde
Crystals 2025, 15(7), 621; https://doi.org/10.3390/cryst15070621 - 2 Jul 2025
Viewed by 1061
Abstract
LK-99, with chemical formula Pb10−xCux(PO4)6O, was recently reported to be a room-temperature superconductor. While this claim has met with little support in a flurry of ensuing work, a variety of calculations (mostly based on [...] Read more.
LK-99, with chemical formula Pb10−xCux(PO4)6O, was recently reported to be a room-temperature superconductor. While this claim has met with little support in a flurry of ensuing work, a variety of calculations (mostly based on density-functional theory) have demonstrated that the system possesses some unusual characteristics in the electronic structure, in particular flat bands. We have established previously that within DFT, the system is insulating with many characteristics resembling the classic cuprates, provided the structure is not constrained to the P3(143) symmetry nominally assigned to it. Here we describe the basic electronic structure of LK-99 within self-consistent many-body perturbative approach, quasiparticle self-consistent GW (QSGW) approximation and their diagrammatic extensions. QSGW predicts that pristine LK-99 is indeed a Mott/charge transfer insulator, with a bandgap gap in excess of 3 eV, whether or not constrained to the P3(143) symmetry. When Pb9Cu(PO4)6O is hole-doped, the valence bands modify only slightly, and a hole pocket appears. However, two solutions emerge: a high-moment solution with the Cu local moment aligned parallel to neighbors, and a low-moment solution with Cu aligned antiparallel to its environment. In the electron-doped case the conduction band structure changes significantly: states of mostly Pb character merge with the formerly dispersionless Cu d state, and high-spin and low spin solutions once again appear. Thus we conclude that with suitable doping, the ground state of the system is not adequately described by a band picture, and that strong correlations are likely. Irrespective of whether this system class hosts superconductivity or not, the transition of Pb10(PO4)6O from being a band insulator to Pb9Cu(PO4)6O, a Mott insulator, and multi-determinantal nature of doped Mott physics make this an extremely interesting case-study for strongly correlated many-body physics. Full article
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23 pages, 888 KiB  
Article
Active Feedback-Driven Defect-Band Steering in Phononic Crystals with Piezoelectric Defects: A Mathematical Approach
by Soo-Ho Jo
Mathematics 2025, 13(13), 2126; https://doi.org/10.3390/math13132126 - 29 Jun 2025
Viewed by 335
Abstract
Defective phononic crystals (PnCs) have garnered significant attention for their ability to localize and amplify elastic wave energy within defect sites or to perform narrowband filtering at defect-band frequencies. The necessity for continuously tunable defect characteristics is driven by the variable excitation frequencies [...] Read more.
Defective phononic crystals (PnCs) have garnered significant attention for their ability to localize and amplify elastic wave energy within defect sites or to perform narrowband filtering at defect-band frequencies. The necessity for continuously tunable defect characteristics is driven by the variable excitation frequencies encountered in rotating machinery. Conventional tuning methodologies, including synthetic negative capacitors or inductors integrated with piezoelectric defects, are constrained to fixed, offline, and incremental adjustments. To address these limitations, the present study proposes an active feedback approach that facilitates online, wide-range steering of defect bands in a one-dimensional PnC. Each defect is equipped with a pair of piezoelectric sensors and actuators, governed by three independently tunable feedback gains: displacement, velocity, and acceleration. Real-time sensor signals are transmitted to a multivariable proportional controller, which dynamically modulates local electroelastic stiffness via the actuators. This results in continuous defect-band frequency shifts across the entire band gap, along with on-demand sensitivity modulation. The analytical model that incorporates these feedback gains has been demonstrated to achieve a level of agreement with COMSOL benchmarks that exceeds 99%, while concurrently reducing computation time from hours to seconds. Displacement- and acceleration-controlled gains yield predictable, monotonic up- or down-shifts in defect-band frequency, whereas the velocity-controlled gain permits sensitivity adjustment without frequency drifts. Furthermore, the combined-gain operation enables the concurrent tuning of both the center frequency and the filtering sensitivity, thereby facilitating an instantaneous remote reconfiguration of bandpass filters. This framework establishes a new class of agile, adaptive ultrasonic devices with applications in ultrasonic imaging, structural health monitoring, and prognostics and health management. Full article
(This article belongs to the Section E2: Control Theory and Mechanics)
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11 pages, 1497 KiB  
Article
Experimental Investigation of Bulk Elastic Wave Propagation in the Volume of Metamaterials
by Aleksandr Korobov, Natalia Shirgina, Aleksey Kokshaiskii, Natalia Odina and Aleksandr Volodarskii
Acoustics 2025, 7(3), 40; https://doi.org/10.3390/acoustics7030040 - 26 Jun 2025
Viewed by 341
Abstract
This paper presents the results of experimental studies on the propagation of longitudinal and transverse ultrasonic waves through a metamaterial—a composite material based on polymer matrix with periodically arranged cylindrical elements. Such structures are known as phononic crystals. Amplitude–frequency characteristics were measured for [...] Read more.
This paper presents the results of experimental studies on the propagation of longitudinal and transverse ultrasonic waves through a metamaterial—a composite material based on polymer matrix with periodically arranged cylindrical elements. Such structures are known as phononic crystals. Amplitude–frequency characteristics were measured for phononic crystals with air and metal cylindrical elements, for both longitudinal waves (in the frequency range from 1.5 to 3 MHz) and transverse waves (in the range from 0.2 to 1.2 MHz). A twofold decrease in the amplitude of the transmitted longitudinal ultrasonic wave was experimentally demonstrated in the passband centered at 1.87 MHz during rotation of the phononic crystal. It was also found that the polarization angle of the transverse ultrasonic wave influences the localization of band gaps and passbands. Band gaps, characterized by amplitude minima near 240 kHz, 290 kHz, and 830 kHz and observed for waves polarized parallel to the crystal axis, are replaced by passbands when the wave is polarized perpendicularly. These results suggest the potential for developing analog ultrasonic frequency filters tunable by the angle of rotation. Full article
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32 pages, 11250 KiB  
Article
Novel Dielectric Resonator-Based Microstrip Filters with Adjustable Transmission and Equalization Zeros
by David Espinosa-Adams, Sergio Llorente-Romano, Vicente González-Posadas, José Luis Jiménez-Martín and Daniel Segovia-Vargas
Electronics 2025, 14(13), 2557; https://doi.org/10.3390/electronics14132557 - 24 Jun 2025
Viewed by 501
Abstract
This work presents a comprehensive technological study of dielectric resonator-based microstrip filters (DRMFs), encompassing the design, fabrication, and rigorous characterization of the TE01δ mode. Through systematic coupling analysis, we demonstrate filters featuring novel input–output coupling techniques and innovative implementations of [...] Read more.
This work presents a comprehensive technological study of dielectric resonator-based microstrip filters (DRMFs), encompassing the design, fabrication, and rigorous characterization of the TE01δ mode. Through systematic coupling analysis, we demonstrate filters featuring novel input–output coupling techniques and innovative implementations of both transmission zeros (4-2-0 configuration) and equalization zeros (4-0-2 configuration), specifically designed for demanding space and radar receiver applications, while the loaded quality factor (QL) and insertion loss do not match those of dielectric resonator cavity filters (DRCFs), our solution significantly surpasses conventional microstrip filters (MFs), achieving QL> 3000 compared to typical QL≈ 200 for coupled-line MFs in X-band. The fabricated filters exhibit exceptional performance as follows: input reflection (S11) below −18 dB (4-2-0) and −16.5 dB (4-0-2), flat transmission response (S21), and out-of-band rejection exceeding −30 dB. Mechanical tuning enables precise control of input–output coupling, inter-resonator coupling, cross-coupling, and frequency synthesis, while equalization zeros provide tailored group delay characteristics. This study positions DRMFs as a viable intermediate technology for high-performance RF systems, bridging the gap between conventional solutions. Full article
(This article belongs to the Special Issue Advances in Low Power Circuit and System Design and Applications)
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12 pages, 3691 KiB  
Article
Dual-Band Resonant Acoustic Metasurfaces from Nested Negative Effective Parameter Unit
by Limei Hao, Dongan Liu, Xiaole Yan, Qingning Yang, Jifeng Guo, Xingchen Tian, You Xie, Shaofang Pang, Tao Zhang and Zhi Chen
Materials 2025, 18(12), 2811; https://doi.org/10.3390/ma18122811 - 15 Jun 2025
Viewed by 431
Abstract
Phase gradient acoustic metasurfaces often exhibit pronounced structural dependence in imaging applications, with significant performance variations arising from differences in the negative effective parameters of resonant unit cells. However, the relationship between imaging performance and negative effective parameters near resonance frequencies—particularly in multi-band [...] Read more.
Phase gradient acoustic metasurfaces often exhibit pronounced structural dependence in imaging applications, with significant performance variations arising from differences in the negative effective parameters of resonant unit cells. However, the relationship between imaging performance and negative effective parameters near resonance frequencies—particularly in multi-band nested structures—remains insufficiently studied. To address this knowledge gap, this work combines effective parameter theory with local resonance characteristics to construct a comparative model investigating how negative effective mass density and modulus influence the imaging quality of single-band and dual-band nested metasurfaces in series and parallel configurations. The results demonstrate that (1) for single-band structures, imaging performance positively correlates with the absolute value of negative effective parameters; (2) in dual-band configurations, smaller inter-band differences in negative parameter values yield more stable imaging; and (3) series-type nested structures exhibit superior reflection imaging performance compared to parallel-type structures, though with marginally reduced design flexibility. This study elucidates the fundamental mechanisms through which negative parameters govern acoustic metasurface imaging and provides theoretical foundations for designing multi-band acoustic devices. Full article
(This article belongs to the Special Issue Metamaterials and Metasurfaces: From Materials to Applications)
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19 pages, 4246 KiB  
Article
Impedance Characteristic-Based Frequency-Domain Parameter Identification Method for Photovoltaic Controllers
by Yujia Tang, Xin Zhou, Yihua Zhu, Junzhen Peng, Chao Luo, Li Zhang and Jinling Qi
Energies 2025, 18(12), 3118; https://doi.org/10.3390/en18123118 - 13 Jun 2025
Viewed by 296
Abstract
With the large-scale integration of photovoltaic power plants—comprising power electronic devices—into power systems, electromagnetic transient simulation has become a key tool for ensuring power system security and stability. The accuracy of photovoltaic unit controller parameters is crucial for the reliability of such simulations. [...] Read more.
With the large-scale integration of photovoltaic power plants—comprising power electronic devices—into power systems, electromagnetic transient simulation has become a key tool for ensuring power system security and stability. The accuracy of photovoltaic unit controller parameters is crucial for the reliability of such simulations. However, as the issue of sub/super-synchronous oscillations becomes increasingly prominent, existing parameter identification methods are primarily based on high/low voltage ride-through characteristics. This limits the applicability of the identification results to specific scenarios and lacks targeted simulation and parameter identification research for sub/super-synchronous oscillations. To address this gap, this study proposes a mathematical model tailored for sub/super-synchronous oscillations and performs sensitivity analysis of converter control parameters to identify dominant parameters across different frequency bands. A frequency-segmented parameter identification method is introduced, capable of fast convergence without relying on a specific optimization algorithm. Finally, the proposed method’s identification results are compared with actual values, voltage ride-through-based identification, particle swarm optimization results, and results under uncertain conditions. It was found that, compared with traditional identification methods, the proposed method reduced the maximum identification error from 7.67% to 4.3% and the identification time from 2 h to 1 h. The maximum identification error of other intelligent algorithms was 5%, with a difference of less than 1% compared to the proposed method. The identified parameters were applied under conditions of strong irradiation (1000 W/m2), weak irradiation (300 W/m2), rapidly varying oscillation frequency, and constant oscillation frequency, and the output characteristics were all close to those of the original parameters. The effectiveness and superiority of the proposed method have been validated, along with its broad applicability to different intelligent algorithms and its robustness under uncertain conditions such as environmental variations and grid frequency fluctuations. Full article
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20 pages, 5110 KiB  
Article
Effect of Copper Modification on Charge Carrier Transport and Defect Properties in Carbon-Doped TiO2 Nanotubes
by Ekaterina V. Kytina, Elizaveta A. Konstantinova, Mikhail N. Martyshov, Timofey P. Savchuk, Vladimir B. Zaitsev, Alexander I. Kokorin, Alexander S. Ilin and German V. Trusov
Catalysts 2025, 15(6), 572; https://doi.org/10.3390/catal15060572 - 9 Jun 2025
Viewed by 621
Abstract
For the efficient operation of various TiO2-based devices, it is important to understand the patterns of electric charge transport. In the present paper TiO2-C-Cu nanocomposites were synthesized by the electrochemical method. The band gap energy Eg of all systems [...] Read more.
For the efficient operation of various TiO2-based devices, it is important to understand the patterns of electric charge transport. In the present paper TiO2-C-Cu nanocomposites were synthesized by the electrochemical method. The band gap energy Eg of all systems was found to be approximately the same, 3.2 eV. Both copper ions replacing titanium ions and copper ions within the CuO phase were detected. The modification of TiO2-C nanotubes by copper led to a significant increase in conductivity and photocurrent, which may be associated with the formation of new donor states (Ti3+ centers) creating levels in the band gap of TiO2-C-Cu. The characteristics of charge carrier transport (including photocurrent) in TiO2-C-Cu materials were revealed for the first time. The conductivity at DC and at low frequencies of AC is due to the movement of electrons along the conduction zone, whereas at high frequencies there is a hopping mechanism of conduction. The acquired original results testify to the potential usage of TiO2-C-Cu nanocomposites in the field of catalysis and photoelectrochemistry. Full article
(This article belongs to the Special Issue Catalysts and Photocatalysts Based on Mixed Metal Oxides)
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19 pages, 3497 KiB  
Article
Design of Bi-Material Triangle Curved Beam Honeycomb Metamaterial with Tunable Poisson’s Ratio, Thermal Expansion, and Band Gap Characteristics
by Zelong Wang, Yong Cheng, Huichuan Zhao and Han Zhang
Materials 2025, 18(10), 2408; https://doi.org/10.3390/ma18102408 - 21 May 2025
Viewed by 449
Abstract
Metamaterials, owing to their exceptional properties such as a negative Poisson’s ratio, phonon band gap, and energy absorption, have garnered significant interest in aerospace, automotive transportation, and other domains. The increasing demand for metamaterial structures with diverse specialized attributes requires innovative design approaches. [...] Read more.
Metamaterials, owing to their exceptional properties such as a negative Poisson’s ratio, phonon band gap, and energy absorption, have garnered significant interest in aerospace, automotive transportation, and other domains. The increasing demand for metamaterial structures with diverse specialized attributes requires innovative design approaches. In this study, a novel bi-material triangular curved beam honeycomb metamaterial (BTBM) is designed, which exhibits a tunable Poisson’s ratio (PR), coefficient of thermal expansion (CTE), and band gap characteristics. These properties are intrinsically coupled through the geometric and material design of the bi-material triangular curved beam structure, meaning that adjustments to the unit cell configuration simultaneously influence PR, CTE, and band gap behavior. This dual-mode control offers versatile design strategies for multifunctional metamaterials. The energy band structure is calculated using finite element simulation analysis, and its accuracy is validated by computing the transmission characteristic curve. Numerical simulations were performed to systematically analyze the coupled effects of geometric parameters and material combinations on the PR and CTE. The results demonstrate significant tunability of these mechanical properties through parametric optimization. The results of this study provide valuable insights into the design and optimization of metamaterial structures with tailored properties for various applications. Full article
(This article belongs to the Section Materials Simulation and Design)
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12 pages, 4893 KiB  
Article
Wideband Near-Infrared Hot-Electron Photodetector Based on Metal Grating Structure
by Hao Huang, Fei Liu, Zidong Chen, Bowen Zhang and Ailing Zhang
Photonics 2025, 12(5), 518; https://doi.org/10.3390/photonics12050518 - 21 May 2025
Viewed by 374
Abstract
The generation of hot electrons through non-radiative decay processes of surface plasmons (SPs) has been extensively demonstrated, enabling the preparation of high-performance hot-electron photodetectors without limitations imposed by material band gap widths. In this paper, a near-infrared wideband hot-electron metal semiconductor photodetector (WHEMSPD) [...] Read more.
The generation of hot electrons through non-radiative decay processes of surface plasmons (SPs) has been extensively demonstrated, enabling the preparation of high-performance hot-electron photodetectors without limitations imposed by material band gap widths. In this paper, a near-infrared wideband hot-electron metal semiconductor photodetector (WHEMSPD) is proposed based on a metal grating plasmonic structure, and its optical and electrical properties are numerically verified. This structure exhibits excellent broadband characteristics within the long-wave near-infrared range (LW-NIR) of 1200–1800 nm, achieving an absorption of approximately 0.7 between 1200 and 1700 nm, with a peak of 0.98 at 1400 nm. The metal grating structure can effectively enhance the excitation of plasmons on the surface and thus increase the absorption within a larger bandwidth. In terms of electrical performance, the responsivity of the WHEMSPD reaches over 20 mA/W within the wavelength range of 1200–1500 nm, with the peak responsivity reaching 28.3 mA/W around 1320 nm. WHEMSPDs in the LW-NIR can be widely used in military, remote sensing, communication, and other related fields. Full article
(This article belongs to the Special Issue Thermal Radiation and Micro-/Nanophotonics)
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14 pages, 2819 KiB  
Article
Band Gap Energy and Lattice Distortion in Anatase TiO2 Thin Films Prepared by Reactive Sputtering with Different Thicknesses
by Cecilia Guillén
Materials 2025, 18(10), 2346; https://doi.org/10.3390/ma18102346 - 18 May 2025
Cited by 1 | Viewed by 707
Abstract
TiO2 is an abundant material on Earth, essential for the sustainable and cost-effective development of various technologies, with anatase being the most effective polymorph for photocatalytic and photovoltaic applications. Bulk crystalline anatase TiO2 exhibits a band gap energy EgA = [...] Read more.
TiO2 is an abundant material on Earth, essential for the sustainable and cost-effective development of various technologies, with anatase being the most effective polymorph for photocatalytic and photovoltaic applications. Bulk crystalline anatase TiO2 exhibits a band gap energy EgA = 3.2 eV, for tetragonal lattice parameters aA = 0.3785 nm and cA = 0.9514 nm, but these characteristics vary for amorphous or polycrystalline thin films. Reactive magnetron sputtering has proven suitable for the preparation of TiO2 coatings on glass fiber substrates, with structural and optical characteristics that change during growth. Below a minimum thickness (t < 0.2 μm), the films have an amorphous nature or extremely small crystallite sizes not observable by X-ray diffraction. Afterwards, compressed quasi-randomly orientated crystallites are detected (volume strain ΔV = −0.02 and stress σV = −3.5 GPa for t = 0.2 μm) that evolve into relaxed and preferentially (004) orientated crystallites, reaching the standard anatase values at t ~ 1.4 μm with σV = 0.0 GPa. The band gap energy increases with lattice distortion according to the relation ∆Eg (eV) = −6∆V, and a further increase is observed for the thinnest coatings (∆Eg = 0.24 eV for t = 0.05 μm). Full article
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