Search Results (805)

This study examines the effect of oxygen concentration and sputtering power on the surface morphology of TiO₂ thin films deposited by DC reactive magnetron sputtering. Surface roughness parameters were obtained using MountainsMap^® software(10.2) from SEM images, while fractal dimensions and texture descriptors were extracted via Python-based image processing. Fractal dimension was calculated using the box-counting method applied to binarized images with multiple threshold levels, and texture analysis employed Gray-Level Co-occurrence Matrix (GLCM) statistics to capture local anisotropies and spatial heterogeneity. Four samples were analyzed, previously prepared with oxygen concentrations of 50% and 75%, and sputtering powers of 500 W and 1000 W. The results have shown that films deposited at higher oxygen levels and sputtering powers exhibited increased roughness, higher fractal dimensions, and stronger GLCM contrast, indicating more complex and heterogeneous surface structures. Conversely, films produced at lower oxygen and power settings showed smoother, more isotropic surfaces with lower complexity. This integrated analysis framework links deposition parameters with morphological characteristics, enhancing the understanding of surface evolution and enabling better control of TiO₂ thin film properties. Full article

This work presents an innovative hydrothermal approach for fabricating flexible piezoelectric PZT thin films on 20 μm titanium foil substrates using TiO₂ and SrTiO₃ (STO) interlayers. Three heterostructures (Ti/PZT, Ti/TiO₂/PZT, and Ti/TiO₂/STO/PZT) were synthesized to enable low-temperature growth and improve ferroelectric performance for advanced flexible MEMS. Characterizations including XRD, PFM, and P–E loop analysis evaluated crystallinity, piezoelectric coefficient d₃₃, and polarization behavior. The results demonstrate that the multilayered Ti/TiO₂/STO/PZT structure significantly enhances performance. XRD confirmed the STO buffer layer effectively reduces lattice mismatch with PZT to ~0.76%, promoting stable morphotropic phase boundary (MPB) composition formation. This optimized film exhibited superior piezoelectric and ferroelectric properties, with a high d₃₃ of 113.42 pm/V, representing an ~8.65% increase over unbuffered Ti/PZT samples, and displayed more uniform domain behavior in PFM imaging. Impedance spectroscopy showed the lowest minimum impedance of 8.96 Ω at 10.19 MHz, indicating strong electromechanical coupling. Furthermore, I–V measurements demonstrated significantly suppressed leakage currents in the STO-buffered samples, with current levels ranging from 10⁻¹² A to 10⁻⁹ A over ±3 V. This structure also showed excellent fatigue endurance through one million electrical cycles, confirming its mechanical and electrical stability. These findings highlight the potential of this hydrothermally engineered flexible heterostructure for high-performance actuators and sensors in advanced MEMS applications. Full article

In this study, Hf_0.5Zr_0.5O₂ (HZO) thin-films were deposited using a Co-plasma atomic layer deposition (CPALD) process that combined both remote plasma and direct plasma, for the development of ferroelectric memory devices. Ferroelectric capacitors with a symmetric hybrid TiN/W/HZO/W/TiN electrode structure, incorporating W electrodes as insertion layers, were fabricated. Rapid thermal annealing (RTA) was subsequently employed to control the crystalline phase of the films. The electrical and structural properties of the capacitors were analyzed based on the RTA temperature, and the presence, thickness, and position of the W insertion electrode layer. Consequently, the capacitor with 5 nm-thick W electrode layers inserted on both the top and bottom sides and annealed at 700 °C exhibited the highest remnant polarization (2P_r = 61.0 μC/cm²). Moreover, the symmetric hybrid electrode capacitors annealed at 500–600 °C also exhibited high 2P_r values of approximately 50.4 μC/cm², with a leakage current density of approximately 4 × 10⁻⁵ A/cm² under an electric field of 2.5 MV/cm. The findings of this study are expected to contribute to the development of electrode structures for improved performance of HZO-based ferroelectric memory devices. Full article

100 nm thick TiO₂/TiN bilayers with varying thickness ratios were deposited via reactive sputtering of a Ti target in controlled oxygen and nitrogen atmospheres. Post-deposition annealing in air at 600 °C was performed to induce nitrogen diffusion through the oxygen-deficient TiO₂ layer. The resulting changes in morphology and chemical environment were investigated in detail using transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and UV-Vis spectroscopy. Detailed TEM and XPS analyses have confirmed nitrogen diffusion across the TiO₂ layer, with surface nitrogen concentration and the ratio of interstitial to substitutional nitrogen dependent on the TiO₂/TiN mass ratio. Optical studies demonstrated modifications in optical constants and a reduction of the effective bandgap from 3.2 eV to 2.6 eV due to new energy states introduced by nitrogen doping. Changes in surface free energy induced by nitrogen incorporation showed a correlation to nitrogen doping sites on the surface, which had positive effects on overall photocatalytic activity. Photocatalytic activity, assessed through methylene blue degradation, showed enhancement attributed to nitrogen doping. Additionally, deposition of a 5 nm gold layer on the annealed sample enabled investigation of synergistic effects between nitrogen doping and gold incorporation, resulting in further improved photocatalytic performance. These findings establish the TiO₂/TiN bilayer as a versatile platform for supporting thin gold films with enhanced photocatalytic properties. Full article

In this study, lanthanum–nitrogen co-doped titanium dioxide (La-N-TiO₂) thin films were fabricated using Ion Beam Assisted Deposition (IBAD) and subjected to accelerated ultraviolet (UV) aging experiments to systematically investigate the impact of co-doping on the films’ resistance to UV aging. X-ray diffraction (XRD) analysis revealed that La-N co-doping inhibits the phase transition from anatase to rutile, significantly enhancing the phase stability of the films. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) characterizations indicated that co-doping increased the density and surface uniformity of the films, thereby delaying the expansion of cracks and increase in roughness induced by UV exposure. Energy-dispersive X-ray spectroscopy (EDS) results confirmed the successful incorporation of La and N into the TiO₂ lattice, enhancing the chemical stability of the films. Contact angle tests demonstrated that La-N co-doping markedly improved the hydrophobicity of the films, inhibiting the rapid decay of hydrophilicity during UV aging. After three years of UV aging, the co-doped films maintained high structural integrity and photocatalytic performance, exhibiting excellent resistance to UV aging. These findings offer new insights into the long-term stability of photovoltaic self-cleaning materials. Full article

Palladium (Pd) and titanium (Ti) exhibit opposite dielectric responses upon hydrogenation, with stronger effects observed in the near-infrared (NIR) region. Leveraging this contrast, we investigated Ti/Pd bilayer thin films as a platform for NIR hydrogen sensing—particularly at telecommunication-relevant wavelengths, where such devices have remained largely unexplored. Ti/Pd bilayers coated with Teflon AF (TAF) and fabricated via sequential electron-beam and thermal evaporation were characterized using optical transmission measurements under repeated hydrogenation cycles. The Ti (5 nm)/Pd (x = 2.5 nm)/TAF (30 nm) architecture showed a 2.7-fold enhancement in the hydrogen-induced optical contrast at 1550 nm compared to Pd/TAF reference films, attributed to the hydrogen ion exchange between the Ti and Pd layers. The optimized structure, with a Pd thickness of x = 1.9 nm, exhibited hysteresis-free sensing behavior, a rapid response time (${\mathrm{t}}_{90}$ < 0.35 s at 4% ${\mathrm{H}}_2$), and a detection limit below 10 ppm. It also demonstrated excellent selectivity with negligible cross-sensitivity to $\mathrm{C}{\mathrm{O}}_2$, $\mathrm{C}{\mathrm{H}}_4$, and CO, as well as high durability, showing less than 6% signal degradation over 135 hydrogenation cycles. These findings establish a scalable, room-temperature NIR hydrogen sensing platform with strong potential for deployment in automotive, environmental, and industrial applications. Full article

In this study, we synthesized anode materials based on iron oxide (Fe₂O₃), titanium dioxide (TiO₂), and reduced graphene oxide (rGO) via the electrophoretic deposition technique. The structural and morphological characteristics of electrodes were examined through various methods including SEM, XRD, Raman, and XPS. Among the investigated compositions, the three-component Fe₂O₃/TiO₂/rGO electrode displayed superior electrochemical characteristics in comparison to the binary Fe₂O₃/rGO and TiO₂/rGO electrodes. Specific capacities of 571, 683, and 729 mAh/g were achieved at 0.5 mA for the respective Fe₂O₃:TiO₂ molar ratios of 1:1, 2:1, and 3:1. The 2:1 ratio configuration offered the most promising balance between cycling stability and capacity, highlighting its potential as a high-performance anode in lithium-ion batteries. This work contributes valuable insights into the synergistic behavior of dual-transition metal oxides in composite electrode design using a low-cost and scalable method. Full article

In this study, the surface photocatalytic activity of an anatase–titanium oxide (TiO_x) film was modified by a thin copper (Cu) layer with the subsequential oxidation annealing process. Through this simple annealing process, the photocatalytic activity of the TiO_x/Cu structure to decompose the methylene blue solution and inhibit the growth of Escherichia coli. could be optimized. With the help of a study on the conductive type required for the oxidation of a single Cu layer, an n/p nanocomposite heterojunction was realized, as this contact system anneals at temperatures of 350 °C and 450 °C. An extra electrical field at the contact interfaces that was be beneficial for separating the photo-generated electron–hole pairs (EHPs) under UV light irradiation was built. The built-in electrical field led to an increase in the structural photocatalytic activity. Moreover, as the p-type cuprous oxide (p-Cu₂O) structure oxidized by the annealed Cu layer could provide a high conduction band that is offset when in contact with the TiO_x film, the photogenerated EHPs on the TiO_x surface could be separated more effectively. Accordingly, the 350 °C-annealed sample, abundant in the nanocomposite TiO_x/Cu₂O heterojunction which could significantly retard the recombination of photo-generated carriers, corresponded to an increase of about 38% in the photocatalytic activity as compared with the single TiO_x film. Full article

The poor magnetic and magneto-optical properties of BiFeO₃, along with its significant lattice mismatch with silicon, have limited its application in silicon-based integrated magneto-optical devices. In this study, co-doping with Sr²⁺ and Ti⁴⁺ ions effectively transformed the trigonal structure of BiFeO₃ into a cubic phase, thereby reducing the lattice mismatch with silicon to 2.8%. High-quality, highly oriented, silicon-based cubic Sr,Ti:BiFeO₃ thin films were successfully fabricated using radio frequency magnetron sputtering. Due to the induced lattice distortion, the characteristic periodic spiral spin antiferromagnetic structure of BiFeO₃ was suppressed, resulting in a significant enhancement of the saturation magnetization of cubic Bi_0.5Sr_0.5Fe_0.5Ti_0.5O₃ (48.0 emu/cm³), compared to that of pristine BiFeO₃ (5.0 emu/cm³). Furthermore, the incorporation of Sr²⁺ and Ti⁴⁺ ions eliminated the birefringence effect inherent in trigonal BiFeO₃, thereby inducing a pronounced magneto-optical effect in the cubic Sr,Ti:BiFeO₃ thin film. The magnetic circular dichroic ellipticity (ψ_F) of Bi_0.5Sr_0.5Fe_0.5Ti_0.5O₃ reached an impressive 2300 degrees/cm. Full article

Tin(II) sulfide(SnS)/titanium(IV) oxide (TiO₂) heterostructure thin films were prepared by radio-frequency magnetron sputtering to investigate the enhancement effect of the formed heterojunction on the photocatalytic performance. By adjusting the sputtering time to vary the thickness of the SnS layer, the crystallinity and light-absorption properties of the light-absorbing layer and the quality of the heterojunction interface were effectively controlled, thereby optimizing the fabrication process of the heterojunction. It was found that when the SnS layer thickness was 244 nm and the TiO₂ layer thickness was 225 nm, the heterostructure film exhibited optimal photoelectrochemical performance, generating the highest photocurrent of 3.03 µA/cm² under visible light, which was 13.8 times that of a pure TiO₂ film and 2.4 times that of a pure SnS film of the same thickness. Additionally, it demonstrated the highest degradation efficiency for methylene blue dye. The improved photoelectrochemical performance of the SnS/TiO₂ heterostructure film can be primarily attributed to the following: (1) the incorporation of narrow-bandgap SnS effectively broadens the light-absorption range, improving visible-light harvesting; (2) the staggered band alignment between SnS and TiO₂ forms a type-II heterojunction, significantly enhancing the charge carrier separation and transport efficiency. The present work demonstrated the feasibility of magnetron sputtering for constructing high-quality SnS/TiO₂ heterostructures, providing insights into the design and fabrication of photocatalytic heterojunctions. Full article

Kesterite (CZTS/CZTSSe) thin-film solar cells are considered an eco-friendly, earth-abundant, and low-cost photovoltaic technology that can fulfill our future energy needs. Due to its outstanding properties including tunable bandgap and high absorption coefficient, the power conversion efficiency (PCE) has reached over 14%. However, toxic cadmium sulfide (CdS) is commonly used as an n-type buffer layer in kesterite thin-film solar cells (KTFSCs) to form a better p–n junction with the p-type CZTS/CZTSSe absorber. In addition to its toxicity, the CdS buffer layer shows parasitic absorption at low wavelengths (400–500 nm) owing to its low bandgap (2.4 eV). For the last few years, several efforts have been made to substitute CdS with an eco-friendly, Cd-free, cost-effective buffer layer with alternative large-bandgap materials such as ZnSnO, Zn (O, S), In₂Se₃, ZnS, ZnMgO, and TiO₂, which showed significant advances. Herein, we summarize the key findings of the research community using a Cd-free buffer layer in KTFSCs to provide a current scenario for future work motivating researchers to design new materials and strategies to achieve higher performance. Full article

The recent focus on wide-bandgap absorbers for tandem solar cell configurations and photovoltaic materials with high absorption coefficients for indoor photovoltaics has prompted a renewed interest in selenium. Over the past few years, the efficiency of Se solar cells has improved significantly, bringing the prospect of industrial production closer to reality. This study presents an innovative vapor transport deposition (VTD) technique for the scalable and cost-effective fabrication of Se thin films. The prepared Se thin films were characterized, and the results show that the VTD method is capable of producing dense and well-crystallized Se thin films. Se solar cells with a structure of glass/FTO/TiO₂/Se/Au were fabricated to evaluate the impact of substrate temperature on device performance. The optimal performance was achieved on the hot side of the substrate during deposition, with a power conversion efficiency (PCE) of 2.56%. This study provides a promising pathway for the low-cost, high-throughput manufacturing of high-performance Se solar cells, facilitating their potential industrial implementation. Full article

Thin TiO₂–SnO₂ nanocomposite films with high gas sensitivity to NO₂ were synthesized by oxidative pyrolysis and comprehensively studied. The composite structure and quantitative composition of the obtained film nanomaterials have been confirmed by X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and energy dispersive X-ray spectroscopy, which causes the presence of n-n heterojunctions and provides improved gas-sensitive properties. The sensor based on the 3TiO₂–97SnO₂ film has the maximum responses, which is explained by the existence of a strong surface electric field formed by large surface potentials in the region of TiO₂–SnO₂ heterojunctions detected by the Kelvin probe force microscopy method. Exposure to low-intensity radiation (no higher than 0.2 mW/cm², radiation wavelength—400 nm) leads to a 30% increase in the sensor response relative to 7.7 ppm NO₂ at an operating temperature of 200 °C and a humidity of 60% RH. At room temperature (20 °C), under humidity conditions, the response is 1.8 when exposed to 0.2 ppm NO₂ and 85 when exposed to 7.7 ppm. The lower sensitivity limit is 0.2 ppm NO₂. The temporal stability of the proposed sensors has been experimentally confirmed. Full article

BaBiO₃ has recently gained significant research attention as a parent material for an interesting family of alloyed compositions with multiple technological applications. In order to grow a variety of structures, a versatile deposition tool such as molecular beam epitaxy must be employed. In this work, the molecular beam epitaxy growth of BaBiO₃ on SrTiO₃(001) and MgO(001) substrates is studied. When grown by molecular beam epitaxy on SrTiO₃(001) or MgO(001) substrates, BaBiO₃ is known to have two competing orientations, namely (001) and (011). Characterization of the thin film is carried out by X-ray diffraction, X-ray reflectivity, atomic force microscopy, Rutherford backscattering, and transmission electron microscopy. Pathways to block the growth of BaBiO₃(011) and to grow only the technologically relevant BaBiO₃(001) are described for both substrates. An understanding of the enabling mechanism of the co-growth is established from an epitaxial point of view. This can be beneficially utilized for the growth of different compositions in the BaBiO₃ material family in a more controlled manner. Full article

This study presents a comprehensive analysis of the modifications in electronic structure and magnetism resulting from electronic excitation in pulsed laser-deposited Ba_0.7Sr_0.3Fe_xTi_(1−x)O₃ thin films, specifically for compositions with x = 0, 0.1, and 0.2. To investigate the effects of electronic energy loss (S_e) within the lattice, we performed 120 MeV Ag ion irradiation at varying fluences (1 × 10¹² ions/cm² and 5 × 10¹² ions/cm²) and compared the results with those of the pristine sample. The S_e induces lattice damage by generating ion tracks along its trajectory, which subsequently leads to a reduction in peak intensity observed in X-ray diffraction patterns. Atomic force microscopy micrographs indicate that irradiation resulted in a decrease in average grain height, accompanied by a more homogeneous grain distribution. X-ray photoelectron spectroscopy reveals a significant increase in oxygen vacancy (V_O) concentration as ion fluence increases. Ferromagnetism exhibits progressive deterioration with rising irradiation fluence. Due to the high S_e and multiple ion impact processes, cation interstitial defects are highly likely, which may overshadow the influence of V_O in inducing ferromagnetism, thereby contributing to an overall decline in magnetic properties. Furthermore, the elevated S_e potentially disrupts bound magnetic polarons, leading to a degradation of long-range ferromagnetism. Collectively, this investigation elucidates the electronic excitation-induced modulation of ferromagnetism, employing Fe impurity incorporation and irradiation techniques for precise defect engineering. Full article