This work presents the evaluation of the photocatalytic activity of P25 TiO2 particles, coated with SiO2, using atomic layer deposition (ALD) for the photocatalytic removal of methylene blue, oxidation of methanol and inactivation of Escherichia coli...
Atomic scale control of the thickness of thin film makes atomic layer deposition highly advantageous in the preparation of high quality super-lattices. However, precisely controlling the film chemical stoichiometry is very challenging. In this study,...
Unlike Co clusters, isolated Co atoms have been shown to be selective for catalytic dehydrogenation of ethane to ethylene; however, preparation of isolated Co sites requires special preparation procedures. Here, we demonstrate that Atomic Layer Depos...
It has previously been reported that epitaxial growth of ZnO can be obtained at low temperatures by atomic layer deposition (ALD) onto a GaN (0001-Ga) surface, corresponding to a ~2.3% compressive lattice mismatch of the deposited ZnO. The question a...
In the current research, surface-modified SiO2 nanoparticles were used upon immersion in an applied base fluid (ethylene glycol:water = 1:1). The atomic layer deposition method (ALD) was introduced to obtain a thin layer of TiO2 to cover the surface...
This study investigates the enhancement of thermal conductivity in silicon carbide (SiC) matrix pellets for accident-tolerant fuels via atomic layer deposition (ALD) of alumina (Al2O3) coatings. Pressure-holding ALD protocols ensured precursor satura...
Etched ion-track polycarbonate membranes with conical nanochannels of aspect ratios of ~3000 are coated with Al2O3, TiO2, and SiO2 thin films of thicknesses between 10 and 20 nm by atomic layer deposition (ALD). By combining ion-track technology and...
In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. P...
Absorption losses and laser-induced damage threshold (LIDT) are considered to be the major constraints for development of optical coatings for high-power laser optics. Such coatings require paramount properties, such as low losses due to optical abso...
Delayed atomic layer deposition (ALD) of ZnO, i.e., area selective (AS)-ALD, was successfully achieved on silicon wafers (Si\SiO2) terminated with tris(dimethylamino)methylsilane (TDMAMS). This resist molecule was deposited in a home-built, near-atmo...
Based on the 2019 report of the European Environment Agency on Air Quality in Europe nitrogen oxides (NOx) were identified as the most harmful air pollutants in terms of damage to ecosystems. Moreover, in Europe, NO2 is pinpointed as one of the most...
Groove is widely used in the wicks of heat pipes. In this paper, a laser texture deposition (LTD) process was proposed to texture deposit SiO2 in rectangular aluminum groove. Both the SEM and XPS analysis revealed that a fluffy SiO2 layer was deposit...
ZnO is a remarkable material with many applications in electronics and catalysis. Atomic layer deposition (ALD) of ZnO on flat substrates is an industrially applied and well-known process. Various studies describe the growth of ZnO layers on flat sub...
Cu-ZnO-based catalysts are of importance for CO2 utilization to synthesize methanol. However, the mechanisms of CO2 activation, the split of the C=O double bond, and the formation of C-H and O-H bonds are still debatable. To understand this mechanism...
This paper evaluates the deposition of silica layers at atmospheric pressure as a pretreatment for the structural bonding of titanium (Ti6Al4V, Ti15V3Cr3Sn3Al) in comparison to an anodizing process (NaTESi process). The SiO2 film was deposited using...
Niobium-doped titanium dioxide (Ti1−xNbxO2) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The f...
Metal-oxide-semiconductor (MOS) capacitors with Al2O3 as a gate insulator are fabricated on cubic silicon carbide (3C-SiC). Al2O3 is deposited both by thermal and plasma-enhanced Atomic Layer Deposition (ALD) on a thermally grown 5 nm SiO2 interlayer...
Photocatalysts for water purification typically lack efficiency for practical applications. Here we present a multi-component (Pt:SiO2:TiO2(P25)) material that was designed using knowledge of reaction mechanisms of mono-modified catalysts (SiO2:TiO2,...
Titanium oxide (TiO2) films and TiO2/SiNx stacks have potential in surface passivation, anti-reflection coatings and carrier-selective contact layers for crystalline Si solar cells. A Si wafer, deposited with 8-nm-thick TiO2 film by atomic layer depo...
Silicon-based anodes can increase the energy density of Li-ion batteries (LIBs) owing to their large weights and volumetric capacities. However, repeated charging and discharging can rapidly deteriorate the electrochemical properties because of a lar...
This work studies single-layer (Al-Si-N) and multi-layer (Al-Si-N-O/Al-Si-O) coatings deposited by magnetron sputtering on stainless steel specimens (AISI 321), which can be used under aggressive conditions. The multi-layer coating consists of six al...
This study investigates the surface topography of the deposited thin films versus the distance between target and substrate (dTS) inside a laser ablation equipment. The profile of the rough surface was obtained by atomic force microscopy data analysi...
Atomic layer deposition (ALD) was used to prepare a thin alumina layer on Fischer–Tropsch catalysts. Co-Pt-Si/γ-Al2O3 catalyst was overcoated with 15–40 cycles of Al2O3 deposited from trimethylaluminum (TMA) and water vapor, followed by thermal annea...
SiO2 films were grown to thicknesses below 15 nm by ozone-assisted atomic layer deposition. The graphene was a chemical vapor deposited on copper foil and transferred wet-chemically to the SiO2 films. On the top of the graphene layer, either continuo...
In this work, the correlation between SiO2 deposition thickness and hydrogen content is discussed and the effect of the SiO2 layer on the properties of synaptic InGaZnO (IGZO) TFTs is analyzed. Three types of IGZO synaptic thin-film transistors (TFTs...
It is of great importance to develop antireflective (AR) coatings and techniques because improved optical performance has been progressively prerequisite for wide-ranging applications such as flat panel displays, optoelectronic devices or solar cells...
Brazing a SiO2f/SiO2 composite with metals is often faced with two problems: poor wettability with the brazing alloy and high residual stress in the joint. To overcome these problems, we report a combined method of selective etching and depositing re...
Silicon nitride (Si3N4) materials are widely used in the electronics, optoelectronics, and semiconductor industries, with Si3N4 thin films exhibiting high densities, high dielectric constants, good insulation performance, and good thermal and chemica...
Nonstoichiometric GeSixOy glass films and many-layer structures based on them were obtained by high-vacuum electron beam vapor deposition (EBVD). Using EBVD, the GeO2, SiO, SiO2, or Ge powders were co-evaporated and deposited onto a cold (100 °C)...
Semiconductor electronics is transforming computing, communication, energy harvesting, automobiles, biotechnology, and other electronic device landscapes. This transformation has been brought about by the ability to sense, receive, manipulate, and tr...
Ni nanoparticles encapsulated within La2O3 porous system (Ni@La2O3), the latter supported on SiO2 (Ni@La2O3)/SiO2), effectively inhibit carbon deposition for the dry reforming of methane. In this study, Ni@La2O3/SiO2 catalyst was prepared using a one...
The effect of the dilution gas flow rate on inorganic oxide insulating layers can improve fluidised bed chemical vapour deposition (FBCVD) in Fe–Si/inorganic-oxide soft magnetic composites and obtain excellent magnetic properties. Herein, Fe–Si/SiO2...
Film stress and refractive index play an important role in the fabrication of suspended waveguides. SiO2 waveguides were successfully fabricated on multiple substrates including Si, Ge, and Al2O3 wafers; the waveguides were deposited using inductivel...
Protective SiO2 coating deposited to iron microparticles is highly demanded both for the chemical and magnetic performance of the latter. Hydrolysis of tetraethoxysilane is the crucial method for SiO2 deposition from a solution. The capabilities of t...
Low reflectivity is of great significance to photoelectric devices, optical displays, solar cells, photocatalysis and other fields. In this paper, vanadium oxide is deposited on pattern SiO2 via atomic layer deposition and then annealed to characteri...
Multicompound TiO2/SiO2 nanoparticles with a diameter of 50–70 nm were generated using a liquid flame spray (LFS) nanoparticle deposition in a single flame. Here, we study the photocatalytic activity of deposited multicompound nanoparticles in gas-ph...
Tri-layer Si/mullite/Yb2SiO5 environmental barrier coating (EBC) was prepared on the SiCf/SiC ceramic matrix composite (CMC) by plasma spray-physical vapor deposition (PS-PVD). The EBC samples were carried out with water vapor corrosion at 1300 °...
The transition of SiC MOSFET structure from planar to trench-based architectures requires the optimization of gate dielectric layers to improve device performance. This study utilizes a range of characterization techniques to explore the interfacial...
A well-dispersed SiO2@Layered hydroxide cupric benzoate (SiO2@Cu-LBMS) with a hierarchical structure have been synthesized by a facile method. The layered hydroxide cupric benzoate with a structure of layered basic metal salt (Cu-LBMS) was directly d...
Direct current (DC) and radio frequency (RF) magnetron sputtering methods were selected for conducting the deposition of structural materials, namely ceramic and metallic co-depositions. A total of six configurations were deposited: single thin layer...
The development of novel and active photocatalysts to industrialize photocatalysis technology is still a challenging task. In this work, a novel method is presented to prepare TiO2/SiO2 NSs by covering SiO2 nanospheres (NSs) with titanate-nanodiscs (...
Enhancement-mode 4H-SiC MOSFETs utilising an aluminium oxide (Al
In this paper, we present a study of various ZnO/SiO2-stacked thin film structures for flexible micro-energy harvesting devices. Two groups of micro-energy harvesting devices, SiO2/ZnO/SiO2 micro-energy generators (SZS-MGs) and ZnO/SiO2/ZnO micro-ene...
We report the first direct synthesis of graphene on SiO2/Si by hot-filament chemical vapor deposition. Graphene deposition was conducted at low pressures (35 Torr) with a mixture of methane/hydrogen and a substrate temperature of 970 °C followed...
In this study, an inorganic multilayer barrier film was fabricated on the polyethylene naphthalate (PEN) substrate, which was composed of a SiO2 layer prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and a Al2O3/ZnO nanolami...
TiO2-SiO2 thin films were created on Corning glass substrates using a simple method. Nine layers of SiO2 were deposited; later, several layers of TiO2 were deposited, and their influence was studied. Raman spectroscopy, high resolution transmission e...
As an important supplementary material to graphene in the optoelectronics field, molybdenum disulfide (MoS2) has attracted attention from researchers due to its good light absorption capacity and adjustable bandgap. In this paper, MoS2 layers are res...
Granular films SiO2(Co) exhibit unusual magnetic and magnetotransport properties which are strongly dependent on the composition of the film and material of a substrate. For example, the injection magnetoresistance (IMR) coefficient reaches a giant (...
Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMT). The SiNx, SiON, and SiO2 were deposited b...
The influence of oxygen–plasma treatment on in situ SiN/AlGaN/GaN MOS high electron mobility transistor with SiO2 gate insulator was investigated. Oxygen–plasma treatment was performed on in situ SiN, before SiO2 gate insulator was deposi...
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