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Nanomaterials
Special Issues
Advanced Studies in Wide-Bandgap Nanomaterials and Devices
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Advanced Studies in Wide-Bandgap Nanomaterials and Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 31 October 2025 | Viewed by 1859

Special Issue Editors

Dr. Hongping Ma

E-Mail Website
Guest Editor
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China
Interests: Wide-bandgap semiconductors; DFT calculation; SiC; Ga2O3; photoelectronic devices; power devices
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Wei Huang

E-Mail Website
Guest Editor
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
Interests: RF devices; GaN; silicon photonic devices; optoelectronic integration; power electronic devices and power integration

Special Issue Information

Dear Colleagues,

We are excited to announce a forthcoming Special Issue in Nanomaterials focused on “Advanced Studies in Wide-Bandgap Nanomaterials and Devices”. This Special Issue will focus on the preparation technology, performance optimization, and application expansion of semiconductor materials, aiming to present readers with the latest trends and cutting-edge technologies in semiconductor materials.

This Special Issue provides a platform for researchers to share their innovative work on a broad spectrum of topics, including, but not limited to, the following:

  1. Structural design and optimization for improving the performance of semiconductor materials and devices, including designing reasonable materials structures using DFT calculations and molecular dynamic simulations, and high-performance device structures using TCAD;
  2. New preparation and doping technologies for regulating the properties of semiconductor materials, including achieving the precise control of semiconductor materials at the atomic scale, and adding an appropriate amount of impurity atoms in order to change their band structure, carrier concentration, and other performance parameters;
  3. Surface treatment methods and technologies for improving the performance of semiconductor materials, including surface cleaning, etching, passivation, and other treatment methods;
  4. Performance characterization for experimentally investigating wide-bandgap semiconductor nanomaterials, including their electrical, optical, thermal, and mechanical properties;
  5. Diverse applications of wide-bandgap semiconductor nanomaterials, such as in energy converting, optoelectronic devices, power devices, and more.

This Special Issue of Nanomaterials comprehensively introduces the latest research progress and technological challenges in the preparation technology, performance optimization, and application expansion of semiconductor materials.

We encourage researchers, industry experts, and professionals from diverse disciplines to contribute their insights and expertise to this Special Issue. By sharing your findings, you will contribute to advancing our understanding of wide-bandgap semiconductor nanomaterials.

Please contact us at hpma@fudan.edu.cn for any inquiries or further information regarding this Special Issue.

We look forward to receiving your contributions and witnessing the progress of the Special Issue, “Advanced Studies in Wide-Bandgap Nanomaterials and Devices” in Nanomaterials.

Dr. Hongping Ma
Prof. Dr. Wei Huang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Wide-Bandgap (WB) semiconductors
  • WB semiconductor theoretical modeling
  • WB semiconductor preparation and doping
  • WB semiconductor surface treatment
  • WB semiconductor performance characterization
  • WB semiconductor energy conversion
  • WB semiconductor optoelectronics
  • WB semiconductor power electronics

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Further information on MDPI's Special Issue policies can be found here.

Published Papers (2 papers)

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13 pages, 3697 KiB  
Article
Interfacial Chemical and Electrical Performance Study and Thermal Annealing Refinement for AlTiO/4H-SiC MOS Capacitors
by Yu-Xuan Zeng, Wei Huang, Hong-Ping Ma and Qing-Chun Zhang
Nanomaterials 2025, 15(11), 814; https://doi.org/10.3390/nano15110814 - 28 May 2025
Viewed by 349
Abstract
The gate reliability issues in SiC-based devices with a gate dielectric formed through heat oxidation are important factors limiting their application in power devices. Aluminum oxide (Al2O3) and titanium dioxide (TiO2) were combined using the ALD process [...] Read more.
The gate reliability issues in SiC-based devices with a gate dielectric formed through heat oxidation are important factors limiting their application in power devices. Aluminum oxide (Al2O3) and titanium dioxide (TiO2) were combined using the ALD process to form a composite AlTiO gate dielectric on a 4H-SiC substrate. TDMAT and TMA were the precursors selected and deposited at 200 °C, and the samples were Ar or N2 annealed at temperatures ranging from 300 °C to 700 °C. An XPS analysis suggested that the AlTiO film had been deposited with a high overall quality and the involvement of Ti atoms had increased the interfacial bonding with the substrate. The as-deposited MOS structure had band shifts of ΔEC = 1.08 eV and ΔEV = 2.41 eV. After annealing, the AlTiO bandgap increased by 0.85 eV at most, and better band alignment was attained. Leakage current and breakdown voltage characteristic investigations were conducted after Al electrode deposition. The leakage current density and electrical breakdown field of an MOS capacitor structure with a SiC substrate were ~10−3 A/cm2 and 6.3 MV/cm, respectively. After the annealing process, both the measures of the JV performance of the MOS capacitor had improved to ~10−6 A/cm2 and 7.2 MV/cm. The interface charge Neff of the AlTiO layer was 4.019 × 1010 cm−2. The AlTiO/SiC structure fabricated in this work proved the feasibility of adjusting the properties of single-component gate dielectric materials using the ALD method, and using a suitable thermal annealing process has great potential to improve the performance of the compound MOS dielectric layer. Full article
(This article belongs to the Special Issue Advanced Studies in Wide-Bandgap Nanomaterials and Devices)
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12 pages, 3766 KiB  
Article
The Trapping Mechanism at the AlGaN/GaN Interface and the Turn-On Characteristics of the p-GaN Direct-Coupled FET Logic Inverters
by Junfeng Yu, Jihong Ding, Tao Wang, Yukai Huang, Wenzhang Du, Jiao Liang, Hongping Ma, Qingchun Zhang, Liang Li, Wei Huang and Wei Zhang
Nanomaterials 2024, 14(24), 1984; https://doi.org/10.3390/nano14241984 - 11 Dec 2024
Viewed by 1032
Abstract
The trapping mechanism at the AlGaN/GaN interface in the p-GaN high electron mobility transistors (HEMTs) and its impact on the turn-on characteristics of direct-coupled FET logic (DCFL) inverters were investigated across various supply voltages (VDD) and test frequencies (f [...] Read more.
The trapping mechanism at the AlGaN/GaN interface in the p-GaN high electron mobility transistors (HEMTs) and its impact on the turn-on characteristics of direct-coupled FET logic (DCFL) inverters were investigated across various supply voltages (VDD) and test frequencies (fm). The frequency-conductance method identified two trap states at the AlGaN/GaN interface (trap activation energy Ec-ET ranges from 0.345 eV to 0.363 eV and 0.438 eV to 0.47 eV). As VDD increased from 1.5 V to 5 V, the interface traps captured more electrons, increasing the channel resistance (Rchannel) and drift-region resistance (Rdrift) of the p-GaN HEMTs and raising the low-level voltage (VOL) from 0.56 V to 1.01 V. At fm = 1 kHz, sufficient trapping and de-trapping led to a delay of 220 µs and a VOL instability of 320 mV. Additionally, as fm increased from 1 kHz to 200 kHz, a positive shift in the threshold voltage of p-GaN HEMTs occurred due to the dominance of trapping. This shift caused VOL to rise from 1.02 V to 1.40 V and extended the fall time (tfall) from 153 ns to 1 µs. This investigation enhances the understanding of DCFL GaN inverters’ behaviors from the perspective of device physics on power switching applications. Full article
(This article belongs to the Special Issue Advanced Studies in Wide-Bandgap Nanomaterials and Devices)
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