Search Results (2,499)

This study investigates the mechanical, morphological, and wear properties of SiO₂-filled tri-axial warp-knitted (TWK) glass fiber-reinforced vinyl ester matrix composites, with a focus on void fraction, tensile, flexural, hardness, and wear behavior. Adding SiO₂ fillers reduced void fractions, enhancing composite strength, with values ranging from 1.63% to 5.31%. Tensile tests revealed that composites with 5 wt% SiO₂ (GV1) exhibited superior tensile strength, Young’s modulus, and elongation due to enhanced fiber–matrix interaction. Conversely, composites with 10 wt% SiO₂ (GV2) showed decreased tensile performance, indicating increased brittleness. Flexural tests demonstrated that GV1 outperformed GV2, showcasing higher flexural strength, elastic modulus, and deflection, reflecting improved load-bearing capacity at optimal filler content. Shore D hardness tests confirmed that GV1 had the highest hardness among the specimens. SEM analysis revealed wear behavior under various loads and sliding distances. GV1 exhibited minimal wear loss at lower loads and distances, while higher loads caused significant matrix detachment and fiber damage. These findings highlight the importance of optimizing SiO₂ filler content to enhance epoxy composites’ mechanical and tribological performance. Full article

A modular strategy for the molecular design of silicone-based antifoaming agents was developed by precisely controlling the architecture of poly (methylhydrosiloxane) (PMHS). Sixteen PMHS variants were synthesized by systematically varying the siloxane chain length (L1–L4), backbone composition (D₃T₁ vs. D₃₀T₁), and terminal group chemistry (H- vs. M-type). These structural modifications resulted in a broad range of Si-H functionalities, which were quantitatively analyzed and correlated with defoaming performance. The PMHS matrices were integrated with high-viscosity PDMS, a nonionic surfactant, and covalently grafted fumed silica—which was chemically matched to each PMHS backbone—to construct formulation-specific defoaming systems with enhanced interfacial compatibility and colloidal stability. Comprehensive physicochemical characterization via FT-IR, ¹H NMR, GPC, TGA, and surface tension analysis revealed a nonmonotonic relationship between Si-H content and defoaming efficiency. Formulations containing 0.1–0.3 wt% Si-H achieved peak performance, with suppression efficiencies up to 96.6% and surface tensions as low as 18.9 mN/m. Deviations from this optimal range impaired performance due to interfacial over-reactivity or reduced mobility. Furthermore, thermal stability and molecular weight distribution were found to be governed by repeat unit architecture and terminal group selection. Compared with conventional EO/PO-modified commercial defoamers, the PMHS-based systems exhibited markedly improved suppression durability and formulation stability in high-viscosity environments. These results establish a predictive structure–property framework for tailoring antifoaming agents and highlight PMHS-based formulations as advanced foam suppressors with improved functionality. This study provides actionable design criteria for high-performance silicone materials with strong potential for application in thermally and mechanically demanding environments such as coating, bioprocessing, and polymer manufacturing. Full article

Quarry dust (QD) landfill causes environmental issues that cannot be ignored. In this study, we systematically explore its potential application as a supplementary cementitious material (SCM) in cemented paste backfill (CPB), revealing the activated mechanism of modified QD (MQD) and exploring the hydration process and workability of CPB containing QD/MQD. The experimental results show that quartz, clinochlore and amphibole components react with CaO to form reactive dicalcium silicate (C₂S) and amorphous glass phases, promoting pozzolanic reactivity in MQD. QD promotes early aluminocarbonate (M_c) formation through CaCO₃-derived CO₃²⁻ release but shifts to hemicarboaluminate (H_c) dominance at 28 d. MQD releases active Al³⁺/Si⁴⁺ due to calcination and deconstruction, significantly increasing the amount of ettringite (AFt) in the later stage. With the synergistic effect of coarse–fine particle gradation, MQD-type fresh backfill can achieve a 161 mm flow spread at 20% replacement. Even if this replacement rate reaches 50%, a strength of 19.87 MPa can still be maintained for 28 days. The good workability and low carbon footprint of MQD-type backfill provide theoretical support for—and technical paths toward—QD recycling and the development of low-carbon building materials. Full article

The development of an integrated circuit faces the challenge of the physical limit of Moore’s Law. One of the most important “Beyond Moore” challenges is the scaling down of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) versus their increasing static power consumption. This is because, at room temperature, the thermal emission transportation mechanism will cause a physical limitation on subthreshold swing (SS), which is fundamentally limited to a minimum value of 60 mV/decade for MOSFETs, and accompanied by an increase in off-state leakage current with the process of scaling down. Moreover, the impacts of short-channel effects on device performance also become an increasingly severe problem with channel length scaling down. Due to the band-to-band tunneling mechanism, Tunnel Field-Effect Transistors (TFETs) can reach a far lower SS than MOSFETs. Recent research works indicated that TFETs are already becoming some of the promising candidates of conventional MOSFETs for ultra-low-power applications. This paper provides a review of some advances in materials and structures along the evolutionary process of TFETs. An in-depth discussion of both experimental works and simulation works is conducted. Furthermore, the performance of TFETs with different structures and materials is explored in detail as well, covering Si, Ge, III-V compounds and 2D materials, alongside different innovative device structures. Additionally, this work provides an outlook on the prospects of TFETs in future ultra-low-power electronics and biosensor applications. Full article

Hexagonal boron nitride (hBN) is a layered material with a wide variety of excellent properties for emergent applications in quantum photonics using atomically thin materials. For example, it hosts single-photon emitters that operate up to room-temperature, it can be exploited for atomically flat tunnel barriers, and it can be used to form high finesse photonic nanocavities. Moreover, it is an ideal encapsulating dielectric for two-dimensional (2D) materials and heterostructures, with highly beneficial effects on their electronic and optical properties. Depending on the use case, the thickness of hBN is a critical parameter and needs to be carefully controlled from the monolayer to hundreds of layers. This calls for quick and non-invasive methods to unambiguously identify the thickness of exfoliated flakes. Here, we show that the apparent color of hBN flakes on different SiO₂/Si substrates can be made to be highly indicative of the flake thickness, providing a simple method to infer the hBN thickness. Using experimental determination of the colour of hBN flakes and calculating the optical contrast, we derived the optimal substrates for the most reliable hBN thickness identification for flakes with thickness ranging from a few layers towards bulk-like hBN. Our results offer a practical guide for the determination of hBN flake thickness for widespread applications using 2D materials and heterostructures. Full article

With their superior switching speed, GaN high-electron-mobility transistors (HEMTs) enable high power density, reduce energy losses, and increase power efficiency in a wide range of applications, such as power electronics, due to their high breakdown voltage. GaN-HEMT devices are subject to long-term reliability due to the self-heating effect and lattice mismatch between the SiC substrate and the GaN. Depletion-mode GaN HEMTs are utilized for radio frequency applications, and this work investigates three wide-bandgap (WBG) GaN HEMT fixed-frequency oscillators with output buffers. The first GaN-on-SiC HEMT oscillator consists of an HEMT amplifier with an LC feedback network. With the supply voltage of 0.8 V, the single-ended GaN oscillator can generate a signal at 8.85 GHz, and it also supplies output power of 2.4 dBm with a buffer supply of 3.0 V. At 1 MHz frequency offset from the carrier, the phase noise is −124.8 dBc/Hz, and the figure of merit (FOM) of the oscillator is −199.8 dBc/Hz. After the previous study, the hot-carrier stressed RF performance of the GaN oscillator is studied, and the oscillator was subject to a drain supply of 8 V for a stressing step time equal to 30 min and measured at the supply voltage of 0.8 V after the step operation for performance benchmark. Stress study indicates the power oscillator with buffer is a good structure for a reliable structure by operating the oscillator core at low supply and the buffer at high supply. The second balanced oscillator can generate a differential signal. The feedback filter consists of a left-handed transmission-line LC network by cascading three unit cells. At a 1 MHz frequency offset from the carrier of 3.818 GHz, the phase noise is −131.73 dBc/Hz, and the FOM of the 2nd oscillator is −188.4 dBc/Hz. High supply voltage operation shows phase noise degradation. The third GaN cross-coupled VCO uses 8-shaped inductors. The VCO uses a pair of drain inductors to improve the Q-factor of the LC tank, and it uses 8-shaped inductors for magnetic coupling noise suppression. At the VCO-core supply of 1.3 V and high buffer supply, the FOM at 6.397 GHz is −190.09 dBc/Hz. This work enhances the design techniques for reliable GaN HEMT oscillators and knowledge to design high-performance circuits. Full article

A broadband, efficient monolithic microwave integrated circuit power amplifier (MMIC PA) in OMMIC’s 0.1 μm GaN-on-Si technology for 5G millimeter-wave communication is presented. This study concentrates on the output matching design, which has an important influence on the PA’s performance. A compact one-order synthesized transformer network (STN) is adopted to match the 50 Ω load to the extracted large-signal output model of the transistor. A dual-objective strategy is developed for parameter optimization, incorporating the impedance transformation trajectory inside the predefined optimal impedance domain (OID) that satisfies the required specifications, with approximation to selected optimal load impedances. By introducing a custom adjustment factor β into the error function, coupled with an automated iterative tuning process based on S-parameter simulations, desired broadband matching results can be rapidly achieved. The proposed two-stage PA occupies a small chip area of only 1.23 mm² and demonstrates good frequency consistency over the 24–31 GHz band. Continuous-wave characterization shows a flat small-signal gain of 19.7 ± 0.5 dB; both the output power (P_out) and the power-added efficiency (PAE) at the 4 dB compression point remain smooth, ranging from 32.3 to 32.7 dBm and 35.5% to 37.8%, respectively. The peak PAE reaches up to nearly 40% at the center frequency. Full article

As transistor dimensions continue to scale below 10 nm, traditional MOSFET architectures face increasing limitations from short-channel effects, gate leakage, and variability. FinFETs, especially junctionless FinFETs on silicon-on-insulator (SOI) substrates, offer improved electrostatic control and simplified fabrication, making them attractive for deeply scaled nodes. In this work, we propose a novel Stepped-Spacer Structured FinFET (S³-FinFET) that incorporates a three-layer HfO₂/Si₃N₄/HfO₂ spacer configuration designed to enhance electrostatics and suppress parasitic effects. Using 2D TCAD simulations, the S³-FinFET is evaluated in terms of key performance metrics, including transfer/output characteristics, ON/OFF current ratio, subthreshold swing (SS), drain-induced barrier lowering (DIBL), gate capacitance, and cut-off frequency. The results show significant improvements in leakage control and high-frequency behavior. These enhancements make the S³-FinFET particularly well-suited for Field-Programmable Gate Arrays (FPGAs), where power efficiency, speed, and signal integrity are critical to performance in reconfigurable logic environments. Full article

Graphene-based micro-ring modulators are promising candidates for next-generation optical interconnects, offering compact footprints, broadband operation, and CMOS compatibility. However, most demonstrations to date have relied on conventional straight bus coupling geometries, which limit design flexibility and require extremely small coupling gaps to reach critical coupling. This work presents a comprehensive comparative analysis of straight, bent, and racetrack bus geometries in graphene-on-silicon nitride (Si₃N₄) micro-ring modulators operating near 1.31 µm. Based on finite-difference time-domain simulation results, a proposed racetrack-based modulator structure demonstrates that extending the coupling region enables critical coupling at larger gaps—up to 300 nm—while preserving high modulation efficiency. With only 6–12% graphene coverage, this geometry achieves extinction ratios of up to 28 dB and supports electrical bandwidths approaching 90 GHz. Findings from this work highlight a new co-design framework for coupling geometry and graphene coverage, offering a pathway to high-speed and high-modulation-depth graphene photonic modulators suitable for scalable integration in next-generation photonic interconnects devices. Full article

The performance of optoelectronic devices is affected by various noise sources. A notable factor is the 4.2% lattice mismatch at the Ge/Si interface, which significantly influences the efficiency of Ge-on-Si photodetectors. These noise sources can be analyzed by examining the impact of the Ge/Si interface and deep traps on dark and photocurrents. This study evaluates the impact of these charge traps on key photodetector performance metrics, including responsivity, photo-to-dark current ratio, noise equivalent power (NEP), and specific detectivity (D^*). The trapping effects on charge transport under both forward and reverse bias conditions are monitored through hysteresis analysis. When illuminated with an unmodulated 1550 nm laser, all the key performance metrics exhibit maximum variations at a specific reverse bias. This critical bias marks the transition from saturated to exponential charge transport regimes, where intensified electric fields enhance trap-assisted recombination and thus maximize metric fluctuations. Full article

High-frequency (h. f.) harmonic distortion (HD) of advanced SiGe heterojunction bipolar transistor (HBT)-based power cells (PwCs), featuring optimized metallization interconnections between individual HBTs, was investigated. Single tone input power (P_in) excitations at 1, 2, 5, and 10 GHz frequencies were employed. The output power (P_out) of the fundamental tone and its harmonics were analyzed in both the frequency and time domains. A rapid increase in the third harmonic of P_out was observed at input powers exceeding −8 dBm for a fundamental frequency of 10 GHz in two different PwC technologies. This increase in the third harmonic was analyzed in terms of nonlinear current waveforms, the nonlinearity of the HBT p-n junction diffusion capacitances, substrate current behavior versus P_in, and avalanche multiplication current. To assess the RF power performance of the PwCs, scalar and vectorial load-pull (LP) measurements were conducted and analyzed. Under matched conditions, the SiGe PwCs demonstrated good linearity, particularly at high frequencies. The key power performance of the PwCs was measured and simulated as follows: input power 1 dB compression point (P_{in_1dB}) of −3 dBm, transducer power gain (G_T) of 15 dB, and power added efficiency (PAE) of 50% at 30 GHz. All measured data were corroborated with simulations using the compact model HiCuM L2. Full article

Metakaolin-based geopolymers with different molar ratios of Si/Al were synthesized and utilized as an efficient adsorbent for the removal of methylene blue (MB) as a model cationic dye from aqueous solution. Various analytical techniques were employed to characterize the synthesized geopolymers. The influence of the main operation conditions on the adsorption kinetics of MB onto the geopolymer was examined under various operating conditions. Results showed a significant maximum MB adsorption capacity at the temperature of 30 °C for all four types of geopolymers studied (designated as A, B, C, and D) up to 35.3, 23.6, 25.5, and 19.0 mg g⁻¹, respectively. The corresponding order of Si/Al ratio was A < C < B < D. Adsorption kinetics was so fast and reached equilibrium in 10 min, and the experimental results were described using the adsorption dynamic intraparticle model (ADIM). The equilibrium data for MB removal was in agreement with the Langmuir isotherm. Full article

This article aims to utilize a microelectromechanical system (MEMS) to modulate coupling behavior of silicon nitride (Si₃N₄) waveguides to perform an optical switch based on a directional coupling (DC) mechanism. There are two states of the switch. First state, a Si₃N₄ wire is initially positioned up suspended in the air. In the second state, this wire will be moved down to be placed between two arms of the DC waveguides, changing the coupling behavior to achieve bar and cross states of the optical switch function. In the future, the MEMS will be used to move this wire down. In this work, we present simulations of the two static states to optimize the DC structure parameters. Based on the simulated results, the device size is 8.8 μm × 55 μm. The insertion loss is calculated to be approximately 0.24 dB and 0.33 dB, the extinction ratio is approximately 24.70 dB and 25.46 dB, and the crosstalk is approximately −24.60 dB and −25.56 dB, respectively. In the C band of optical communication, the insertion loss ranges from 0.18 dB to 0.47 dB. As such, this device will exhibit excellent optical switch performance and provide advantages in many integrated optics-related optical systems applications. Furthermore, it can be used in optical communications, data centers, LiDAR, and so on, enhancing important reference value for such applications. Full article

This paper introduces a 0.5–5.8 GHz low-noise amplifier (LNA) incorporating a gyrator-C-based active inductor (AI) and an enhanced deep trench isolation (DTI) electrostatic discharge (ESD) diode. Results suggest that AIs exhibit excellent consistency under various process voltage temperatures (PVTs) as well as input powers and the improved DTI diodes reduce parasitic capacitance by an average of 8.5% compared to conventional ones. In terms of circuit design, comprehensive analyses of gain flatness and noise are conducted. Fabricated using a 0.18 μm SiGe BiCMOS technology, the LNA delivers a high S21 of 18.3 ± 0.3 dB, a minimum noise figure of 2.6 dB, and an S11 and S22 of less than −10 dB over the entire frequency band. Operating from a 3.3 V supply voltage with a core area of 0.049 mm², it consumes 10 mA of current. Full article

An optical power splitter (OPS) with arbitrary splitting ratios has attracted significant research interest for its broad applications in photonic integrated circuits. A series of OPSs with arbitrary splitting ratios based on silicon nitride (Si₃N₄) platforms are presented. The devices are designed with ultra-compact dimensions using three-dimensional finite-difference time-domain (3D FDTD) analysis and an inverse design algorithm. Within a 50 nm bandwidth (1525 nm to 1575 nm), we demonstrated a 1 × 2 OPS with splitting ratios of 1:1, 1:1.5, and 1:2; a 1 × 3 OPS with ratios of 1:2:1 and 2:1:2; and a 1 × 4 OPS with ratios of 1:1:1:1 and 2:1:2:1. The target splitting ratios are achieved by optimizing pixel distributions in the coupling region. The dimensions of the designed devices are 1.96 × 1.96 µm², 2.8 × 2.8 µm², and 2.8 × 4.2 µm², respectively. The designed devices achieve transmission efficiencies exceeding 90% and exhibit excellent power splitting ratios (PSRs). Full article