2D Materials for High-Performance Optoelectronics

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: 25 July 2025 | Viewed by 922

Special Issue Editor


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Guest Editor
College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
Interests: 2D materials; optoelectronic devices; energy storage; flexible devices
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Special Issue Information

Dear Colleagues,

The discovery of graphene has opened up a new era in the research of two-dimensional (2D) materials. Two-dimensional semiconductor materials with suitable bandgaps have excellent electrical, optical, and mechanical properties, showing great application prospects in new-generation high-performance electronic, optoelectronic, and flexible devices. Over the past decade, a great deal of work has been devoted to the controllable fabrication of 2D semiconductor materials, as well as the construction of various optoelectronic devices. However, the reliable evaluation of and strategies for high-performance optoelectronic devices still require further exploration.

This Special Issue, entitled “2D Materials for High-Performance Optoelectronics”, seeks to attract state-of-the-art research on advanced 2D semiconductor-based optoelectronic devices. This Special Issue welcomes original papers or reviews on experiments and theoretical simulations, focusing on a variety of novel 2D semiconductor materials (e.g., transition metal sulphides, III-VI materials, single-element semiconductors, perovskite, metal–organic frameworks, etc.) for high-performance optoelectronic devices (e.g., self-powered photodetectors, optoelectronic synapse, photoelectrochemical photodetectors, etc.).

To promote the development of optoelectronic devices based on 2D semiconductor materials, I cordially invite you to contribute to this Special Issue.

Prof. Dr. Wei Feng
Guest Editor

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Keywords

  • 2D materials
  • photodetectors
  • photodiodes
  • self-powered
  • optoelectronic synapse

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Published Papers (1 paper)

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Research

9 pages, 2453 KiB  
Article
Photoelectrochemical-Type Photodetectors Based on Ball Milling InSe for Underwater Optoelectronic Devices
by Yi Xu, Junxin Zhou, Dongyue Tian, Zhendong Fu, Yuewu Huang and Wei Feng
Nanomaterials 2025, 15(1), 3; https://doi.org/10.3390/nano15010003 - 24 Dec 2024
Viewed by 723
Abstract
In this paper, InSe nanosheets were synthesized by a ball milling method, and photoelectrochemical-type photodetectors (PEC PDs) based on the ball milling InSe (M-InSe) were fabricated using simulated seawater as the electrolyte. M-InSe nanosheets show good absorption in the visible region of 450–600 [...] Read more.
In this paper, InSe nanosheets were synthesized by a ball milling method, and photoelectrochemical-type photodetectors (PEC PDs) based on the ball milling InSe (M-InSe) were fabricated using simulated seawater as the electrolyte. M-InSe nanosheets show good absorption in the visible region of 450–600 nm. The M-InSe PEC PDs display a good self-powered photoresponse under 525 nm irradiation, including a high responsivity of 0.8 mA/W, fast response time of 28/300 ms, and good stability. Furthermore, the InSe PEC PDs successfully demonstrated prototype application in wireless underwater optical communication and optical imaging. These results demonstrate that M-InSe holds good application prospects in underwater optoelectronic devices. Full article
(This article belongs to the Special Issue 2D Materials for High-Performance Optoelectronics)
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