Semiconductor Materials for Gas Sensing

Dear Colleagues,

The area of gas sensors application is rapidly expanding. This leads both to the expansion of the range of target gases and a greater variety of their detection conditions: temperature, humidity, interfering compounds. Semiconductor materials are of exceptional interest for the development of gas sensors that can be integrated into miniature devices and convert information into electrical signals with high sensitivity and speed.

Wide-gap metal oxides SnO₂, ZnO, WO₃, In₂O₃ are most widely used to create gas sensors. However, despite their high sensitivity and easy manufacturing, these materials have limitations in selectivity, especially when analyzing gas mixtures in humid conditions. Overcoming these limitations is the main focus of research in the field of sensor materials science. A significant amount of work falls on semiconductor structures consisting of different compounds. Studies consider nanocomposites, organic–inorganic hybrid materials, and n-n and n-p heterostructures. At present, the full potential of the new material is difficult to imagine, as information is still being accumulated. This Special Issue of MDPI Sensors can become a scientific platform for discussing the characteristics of sensors based on complex semiconductor materials.

Thus, you are invited to submit contributions devoted to the synthesis and characterization of semiconductor structures of different type and composition and their characterization in relation to specific gas sensor properties:

• n-n and n-p semiconductor heterostructures
• metal oxide-based nanocomposites
• Organic–inorganic hybrid semiconductor materials
• Complex oxide (spinels, perovskites, etc.) semiconductor materials

Prof. Dr. Alexander M. Gaskov
Prof. Dr. Marina N. Rumyantseva
Guest Editors

Manuscript Submission Information

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