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Solid State Image Sensors for Emerging Space, Nuclear and Scientific Applications

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Physical Sensors".

Deadline for manuscript submissions: closed (30 April 2021) | Viewed by 5796

Special Issue Editors


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Guest Editor
Airbus Defence and Space
Interests: Solid-state image sensors; CMOS active pixel sensors; radiation effects; radiation-matter interaction; optical fiber sensors

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Guest Editor
ISAE-SUPAERO, Université de Toulouse, Toulouse, France
Interests: CMOS active pixel image sensors (APS/CIS); radiation effects/hardening; random telegraph signal (RTS); displacement damage; total ionizing dose; dark current; semiconductor defects

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Guest Editor
Thayer School of Engineering at Dartmouth
Interests: Solid-state image sensors (CCDs, CMOS active pixel sensors, Quanta Image Sensors); advanced imaging systems; on-chip image processing; new applications for image sensors
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
Jet Propulsion Laboratory
Interests: Ultraviolet and low-energy particle detectors, focal plane arrays and their applications; ultraviolet spectrometers and UV cameras, biomedical applications, back illumination approaches for novel device applications, advanced epitaxial techniques and applications; nanostructures fabrication and device (detectors and energy conversion) applications

Special Issue Information

Dear Colleagues,

Many commercial applications today require imaging systems with very high performance, integration capabilities, and low power consumption. On the other hand, solid-state image sensors are used more and more frequently in very specific environments that require ad hoc developments to advance various state-of-the-art research areas, e.g., radiation hardening, high-speed imaging, low noise amplification, single-photon/particle detection, and time of flight measurement.

This Special Issue gathers together solid-state image sensor developments for emerging scientific applications. Advances in design (architecture and process) and characterization of imaging systems are presented focusing on scientific fields such as the following:

  • Space applications;
  • Biomedical imaging;
  • Imaging in nuclear environments;
  • Microscopy, spectroscopy, and photonics image sensors developments;
  • Particle detection and photon counting applications;
  • Non-visible light imaging;
  • Range Imaging.

Dr. Serena Rizzolo
Prof. Dr. Vincent Goiffon
Prof. Dr. Eric Fossum
Dr. Nikzad Shouleh
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • CMOS image sensors
  • radiation effects
  • space applications
  • medical imaging
  • remote monitoring
  • low noise imaging
  • particle detection
  • photon counting
  • high-speed cameras
  • time of flight measurements

Published Papers (2 papers)

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Research

12 pages, 3083 KiB  
Article
Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer
by Kaitlin M. Anagnost, Eldred Lee, Zhehui Wang, Jifeng Liu and Eric R. Fossum
Sensors 2021, 21(22), 7566; https://doi.org/10.3390/s21227566 - 14 Nov 2021
Cited by 2 | Viewed by 2434
Abstract
Simulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial resolution. [...] Read more.
Simulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial resolution. With a high-Z layer that down-converts incident photons on top of a silicon detector, this design has increased absorption efficiency without sacrificing spatial resolution. Simulation results elucidate the relationship between the thickness of each layer and the number of photoelectrons generated. Further, the physics behind the production of electron-hole pairs in the silicon layer is studied via a second model to shed more light on the detector’s functionality. Together, the two models provide a greater understanding of this detector and reveal the potential of this novel form of X-ray detection. Full article
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17 pages, 5343 KiB  
Article
Design and Characterization of Backside Termination Structures for Thick Fully-Depleted MAPS
by Thomas Corradino, Gian-Franco Dalla Betta, Lorenzo De Cilladi, Coralie Neubüser and Lucio Pancheri
Sensors 2021, 21(11), 3809; https://doi.org/10.3390/s21113809 - 31 May 2021
Cited by 4 | Viewed by 2704
Abstract
Fully Depleted Monolithic Active Pixel Sensors (FD-MAPS) represent an appealing alternative to hybrid detectors for radiation imaging applications. We have recently demonstrated the feasibility of FD-MAPS based on a commercial 110 nm CMOS technology, adapted using high-resistivity substrates and backside post-processing. A p/n [...] Read more.
Fully Depleted Monolithic Active Pixel Sensors (FD-MAPS) represent an appealing alternative to hybrid detectors for radiation imaging applications. We have recently demonstrated the feasibility of FD-MAPS based on a commercial 110 nm CMOS technology, adapted using high-resistivity substrates and backside post-processing. A p/n junction diode, fabricated on the detector backside using low-temperature processing steps after the completion of the front-side Back End of Line (BEOL), is reverse-biased to achieve the full depletion of the substrate and thus fast charge collection by drift. Test diodes including termination structures with different numbers of floating guard rings and different pitches were fabricated together with other Process Control Monitor structures. In this paper, we present the design of the backside diodes, together with results from the electrical characterization of the test devices, aiming to improve understanding of the strengths and limitations of the proposed approach. Characterization results obtained on several wafers demonstrate the effectiveness of the termination rings in increasing the breakdown voltage of the backside diodes and in coping with the variability of the passivation layer characteristics. A breakdown voltage exceeding 400 V in the worst case was demonstrated in devices with 30 guard rings with 6 μm pitch, thus enabling the full depletion of high-resistivity substrates with a thickness larger than or equal to 300 μm. Additionally, we show the first direct comparison for this technology of measured pixel characteristics with 3D TCAD simulations, proving a good agreement in the extracted operating voltages. Full article
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