CMOS-Integrated Optoelectronics for Sensing Applications
A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Physical Sensors".
Deadline for manuscript submissions: 1 July 2025 | Viewed by 1131
Special Issue Editor
Interests: heteroepitaxy; quantum dots; monolithic integration; silicon photonics; nanostructures
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Heterogeneous integration of advanced optical materials such as compound semiconductors (CSs) and 2D transition metal dichalcogenides (TMDs) on well-established CMOS manufacturing platforms is driving sensors into the next generation with a considerably wider spectrum coverage, low costs and high throughputs, beyond the capability of conventional silicon detectors. The key to enabling such an exciting technology relies on the development of high-crystalline-quality alloys and the invention of novel optoelectronic devices. Fundamental challenges associated with these development endeavors need to be clarified and addressed accordingly. A system-level demonstration that provides pathways to realize high-performance detector modules or focal plane arrays (FPAs) on CMOS readout integrated circuits (ROICs) is also highlighted, which is synergistic with various applications leveraging CMOS-based heterogeneous integration technology and CMOS ICs.
This Special Issue aims at collecting pronounced advances in high-performance CMOS-based photodetectors and other types of optoelectronic devices for sensing applications, based on heterogeneous integration, including materials study, device architecture innovation, and circuits/system design and validation.
Dr. Bei Shi
Guest Editor
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Keywords
- detectors and focal plane arrays
- heterogeneous integration
- CMOS ICs
- compound semiconductors
- advanced optical materials
- sensor processing and characterizations
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