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Broadband and Higher Stability Triboelectric Nanogenerators and Smart Sensors System

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Nanosensors".

Deadline for manuscript submissions: closed (20 November 2023) | Viewed by 3964

Special Issue Editors


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Guest Editor
Ministry of Education Engineering Research Center of Smart Microsensors and Microsystems, Hangzhou Dianzi University, Hangzhou 310018, China
Interests: self-powered sensor and wearable flexible electronic system; MEMS sensor; energy harvesting; integrated circuit

E-Mail Website
Guest Editor
Ministry of Education Engineering Research Center of Smart Microsensors and Microsystems, Hangzhou Dianzi University, Hangzhou 310018, China
Interests: MEMS sensors; ASIC integrated circuit; flexible electronics

Special Issue Information

Dear Colleagues,

Broadband triboelectric nanogenerators (TENGs) have become a promising candidate for the power supply of mobile devices and smart sensors systems owing to their simple preparation as well as high instantaneous power. TENGs can be widely harvested from environmental mechanical energy sources, such as wind, ocean wave, river flow, and biomechanical energy in our living environment. Additionally, developing smart sensors, including self-powered and MEMS sensors, are vital for the Internet of Things, wearable electronics, and sensor networks, which is a major driving force for the development of the modern world. This Special Issue will publish papers that reflect new research and innovations in the area of broadband triboelectric nanogenerators and smart sensors, that include, but are not limited to, the following main topics: broadband and higher stability triboelectric nanogenerators; wearable self-powered sensors; MEMS sensors; and smart sensor applications systems.

Dr. Chaoran Liu
Prof. Dr. Linxi Dong
Guest Editors

Manuscript Submission Information

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Keywords

  • broadband triboelectric nanogenerators
  • self-pwored sensor
  • MEMS sensor
  • wearable sensor system
  • smart sensor design and application
  • broadband and higher stability triboelectric nanogenerators
  • wearable self-powered sensors
  • smart sensor applications system
  • smart control system

Published Papers (1 paper)

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Review

21 pages, 2971 KiB  
Review
Application of Silicon Nanowire Field Effect Transistor (SiNW-FET) Biosensor with High Sensitivity
by Huiping Li, Dujuan Li, Huiyi Chen, Xiaojie Yue, Kai Fan, Linxi Dong and Gaofeng Wang
Sensors 2023, 23(15), 6808; https://doi.org/10.3390/s23156808 - 30 Jul 2023
Cited by 6 | Viewed by 2938
Abstract
As a new type of one-dimensional semiconductor nanometer material, silicon nanowires (SiNWs) possess good application prospects in the field of biomedical sensing. SiNWs have excellent electronic properties for improving the detection sensitivity of biosensors. The combination of SiNWs and field effect transistors (FETs) [...] Read more.
As a new type of one-dimensional semiconductor nanometer material, silicon nanowires (SiNWs) possess good application prospects in the field of biomedical sensing. SiNWs have excellent electronic properties for improving the detection sensitivity of biosensors. The combination of SiNWs and field effect transistors (FETs) formed one special biosensor with high sensitivity and target selectivity in real-time and label-free. Recently, SiNW-FETs have received more attention in fields of biomedical detection. Here, we give a critical review of the progress of SiNW-FETs, in particular, about the reversible surface modification methods. Moreover, we summarized the applications of SiNW-FETs in DNA, protein, and microbial detection. We also discuss the related working principle and technical approaches. Our review provides an extensive discussion for studying the challenges in the future development of SiNW-FETs. Full article
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