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Advances in Self-Assembly of Block Copolymers: Synthesis and Applications

A special issue of Polymers (ISSN 2073-4360). This special issue belongs to the section "Polymer Chemistry".

Deadline for manuscript submissions: 31 March 2026 | Viewed by 252

Special Issue Editors


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Guest Editor
The Institute of Intelligent Electronics and Systems, College of Future Information Technology, Fudan University, Shanghai 200438, China
Interests: block copolymer; directed self-assembly; lithography; devices fabrication; nanocomposites for chips; nanostructures
Special Issues, Collections and Topics in MDPI journals
The Institute of Intelligent Electronics and Systems, College of Future Information Technology, Fudan University, Shanghai 200438, China
Interests: 2D polymers; directed self-assembly (DSA); self-healing flexible electronics; photoelectric devices

Special Issue Information

Dear Colleagues,

Block copolymers have emerged as a versatile class of materials with unparalleled potential in nanotechnology and advanced materials science due to their intrinsic ability to self-assemble into well-defined nanostructures. This Special Issue focuses on recent breakthroughs in the design, synthesis, and application of block copolymers, highlighting their growing impact across diverse fields ranging from nanotechnology to biomedicine.

The controlled self-assembly of block copolymers enables the creation of periodic nanostructures with tunable morphologies (e.g., spheres, cylinders, lamellae, and gyroids) at length scales of 5–100 nm. These materials are revolutionizing areas such as nanolithography, membrane technology, drug delivery, and energy storage by providing precise control over nanoscale architecture and functionality. Therefore, a deep understanding of structure–property relationships and self-assembly behavior is crucial for harnessing the full potential of block copolymers in various technological applications.

We welcome both fundamental research articles and reviews that contribute to the advancement of block copolymers and their self-assembly mechanisms. Potential topics include, but are not limited to, the following:

  • Controlled synthesis of novel block copolymers;
  • Self-assembly mechanisms;
  • Thin film nanostructuring for nanolithography;
  • Advanced block copolymers applications;
  • Energy applications in batteries and photovoltaics;
  • Characterization techniques for nanostructured materials.

Prof. Dr. Shisheng Xiong
Dr. Zili Li
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Polymers is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2700 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • block copolymers
  • self-assembly
  • nanotechnology
  • lithography
  • devices

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Published Papers (1 paper)

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Research

23 pages, 30393 KB  
Article
An Acid-Cleavable Lamellar Block Copolymer for Sub-30-nm Line Spacing Patterning via Graphoepitaxial Directed Self-Assembly and Direct Wet Etching
by Jianghao Zhan, Caiwei Shang, Muqiao Niu, Jiacheng Luo, Shengguang Gao, Zhiyong Wu, Shengru Niu, Yiming Xu, Xingmiao Zhang, Zili Li and Shisheng Xiong
Polymers 2025, 17(18), 2435; https://doi.org/10.3390/polym17182435 - 9 Sep 2025
Abstract
Graphoepitaxial directed self-assembly (DSA) of block copolymers (BCPs) has emerged as a promising strategy for sub-30 nm line spacing patterning in semiconductor nanofabrication. Among the available BCP systems, polystyrene-block-poly (methyl methacrylate) (PS-b-PMMA) has been extensively utilized due to its well-characterized phase [...] Read more.
Graphoepitaxial directed self-assembly (DSA) of block copolymers (BCPs) has emerged as a promising strategy for sub-30 nm line spacing patterning in semiconductor nanofabrication. Among the available BCP systems, polystyrene-block-poly (methyl methacrylate) (PS-b-PMMA) has been extensively utilized due to its well-characterized phase behavior and compatibility with standard lithographic processes. However, achieving a high-fidelity pattern with PS-b-PMMA remains challenging, owing to its limited etch contrast and reliance on UV-assisted degradation for PMMA removal. In this study, we report the synthesis of an acid-cleavable lamellar BCP, PS-N=CH-PMMA, incorporating a dynamic Schiff base (-N=CH-) linkage at the junction. This functional design enables UV-free wet etching, allowing selective removal of PMMA domains using glacial acetic acid. The synthesized copolymers retain the self-assembly characteristics of PS-b-PMMA and form vertically aligned lamellar nanostructures, with domain spacings tunable from 36.1 to 40.2 nm by varying the PMMA block length. When confined within 193i-defined trench templates with a critical dimension (CD) of 55 nm (trench width), these materials produced well-ordered one-space-per-trench patterns with interline spacings tunable from 15 to 25 nm, demonstrating significant line spacing shrinkage relative to the original template CD. SEM and FIB-TEM analyses confirmed that PS-N=CH-PMMA exhibits markedly improved vertical etch profiles and reduced PMMA residue compared to PS-b-PMMA, even without UV exposure. Furthermore, Ohta–Kawasaki simulations revealed that trench sidewall angle critically influences PS distribution and residual morphology. Collectively, this work demonstrates the potential of dynamic covalent chemistry to enhance the wet development fidelity of BCP lithography and offers a thermally compatible, UV-free strategy for sub-30 nm nanopatterning. Full article
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