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Photonics
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Silicon Based Integrated Optics
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Silicon Based Integrated Optics

A special issue of Photonics (ISSN 2304-6732).

Deadline for manuscript submissions: closed (31 August 2022) | Viewed by 18648

Special Issue Editors

Dr. Lin Chang

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Interests: nonlinear photonics; silicon photonics; quantum photonics; III-V integration on Si; integrated lasers
Prof. Dr. Xingjun Wang

E-Mail Website
Guest Editor
State Key Laboratory of Advanced Optical Communications System and Networks, Department of Electronics, Peking University, Beijing 100871, China
Interests: silicon photonics; Si-based light source; Si modulator; detector
Dr. Andreas Boes

E-Mail Website
Guest Editor
School of Engineering, RMIT University, Melbourne, VIC 3000, Australia
Interests: photonic integrated circuits; nonlinear photonics; electro-optics; precision measurements; lithium niobate

Special Issue Information

Dear Colleagues,

Silicon photonics has gone through an explosive growth in the last decade. It has diverse applications, such as data centers, high-performance computation, sensing and fundamental studies. The key advantage of silicon photonics is their ability to leverage modern manufacturing infrastructures, particularly the complementary metal-oxide-semiconductor process, to achieve low-cost mass production. At the same time, silicon and its oxide enable high-index contrast waveguide structures. Combined with silicon’s desirable material properties, the silicon on an insulator (SOI) platform is therefore suitable for realizing versatile functions. To date, a wide range of technologies have been developed and commercialized in this field, including modulators, (de)multiplexers, Mach–Zehnder interferometers and photodetectors.

However, silicon also has a number of shortcomings as a photonic material. It is not an efficient photon emitter due to the indirect bandgap; therefore, it cannot be used as a light source. Due to its centrosymmetric crystalline structure, silicon does not exhibit a second-order nonlinearity or a Pockels effect for electro-optic modulators. The low bandgap energy can cause undesired two-photon absorption at strong optical field intensities at typical communication wavelengths, thereby preventing efficient nonlinear process. To overcome those problems, various advanced technologies have been developed by integrating different types of material into Si substrates, such as III-V on silicon for efficient lasers, electro-optic material for modulators and nonlinear media for frequency converters, opening up opportunities for novel applications.

The Special Issue aims to present the state-of-the-art technologies in silicon photonics, including demonstrations based on either the SOI waveguide or other materials integrated with the Si substrate. It covers both individual-device-level demonstrations as well as system-level applications based on silicon photonics. Researchers are invited to submit their contributions to this Special Issue. Topics include, but are not limited to:

  • Semiconductors lasers on Si;
  • Si-based modulators;
  • Advanced SOI passive devices;
  • Photodetectors on Si;
  • Integration of electro-optic materials on Si;
  • Frequency combs on Si;
  • 2-D materials on Si;
  • Si-based communications;
  • Si-based computations;
  • Si-based sensing.

Dr. Lin Chang
Prof. Dr. Xingjun Wang
Dr. Andreas Boes
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • silicon photonics
  • SOI waveguide
  • material integration
  • semiconductor laser
  • modulator
  • nonlinear photonics
  • photonic integrated circuits

Published Papers (5 papers)

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Research

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12 pages, 3575 KiB  
Article
A 60 μm-Long Fiber-to-Chip Edge Coupler Assisted by Subwavelength Grating Structure with Ultralow Loss and Large Bandwidth
by Yan Xiao, Yin Xu, Yue Dong, Bo Zhang and Yi Ni
Photonics 2022, 9(6), 413; https://doi.org/10.3390/photonics9060413 - 12 Jun 2022
Cited by 8 | Viewed by 2938
Abstract
Efficient fiber-to-chip coupling is a key issue in the field of integrated optics and photonics due to the lack of on-chip silicon light source at present. Here, we propose a silicon-based fiber-to-chip edge coupler by use of subwavelength grating (SWG)-assisted structure. The key [...] Read more.
Efficient fiber-to-chip coupling is a key issue in the field of integrated optics and photonics due to the lack of on-chip silicon light source at present. Here, we propose a silicon-based fiber-to-chip edge coupler by use of subwavelength grating (SWG)-assisted structure. The key conversion region is composed of a trident-shaped SWG in the center and two matched strip waveguides on both sides. To achieve high mode match between fiber mode and silicon waveguide mode and to realize low-loss transmission on-chip, we have divided the conversion region into three parts and determined their optimum dimensions. From results, the total device length is only 60 μm from input fiber to output silicon waveguide, and the insertion loss (IL) is as low as 0.23 dB at the wavelength of 1.55 μm. For the working bandwidth, its value can be enlarged to 240 nm (or 390 nm) by keeping IL < 1 dB (or 1.5 dB), which is quite promising for on-chip broadband devices. Based upon these advantages, we hope such a device could be applied in light coupling between optical fiber and on-chip silicon waveguide. Full article
(This article belongs to the Special Issue Silicon Based Integrated Optics)
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10 pages, 9360 KiB  
Communication
An Ultra-Broadband Design of TM-Pass/TE-Stop Polarizer Based on Multistage Bragg Gratings
by Yue Dong, Yu Liu, Yin Xu and Bo Zhang
Photonics 2022, 9(6), 409; https://doi.org/10.3390/photonics9060409 - 10 Jun 2022
Cited by 4 | Viewed by 1422
Abstract
In this paper, a multistage Bragg grating with various kinds of periods is introduced in the design of a reflection-based TM-pass/TE-stop polarizer. The cascade grating sections reflect a wide wavelength range of the TE polarization state. Additionally, on the other hand, the TM [...] Read more.
In this paper, a multistage Bragg grating with various kinds of periods is introduced in the design of a reflection-based TM-pass/TE-stop polarizer. The cascade grating sections reflect a wide wavelength range of the TE polarization state. Additionally, on the other hand, the TM polarization state always passes through the waveguide. Such a design facilitates the polarizer working bandwidth, which is defined as the wavelength range with an extinction ratio of greater than 20 dB, and can reach 231 nm using only three grating sections. Meanwhile, the incision loss is always less than 0.42 dB over the working wavelength band. Furthermore, if a slightly higher loss is permitted, the polarizer working bandwidth can be extended to further than 310 nm using five grating sections. Full article
(This article belongs to the Special Issue Silicon Based Integrated Optics)
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18 pages, 4709 KiB  
Article
Study of an Integration Platform Based on an Adiabatic Active-Layer Waveguide Connection for InP Photonic Device Integration Mirroring That of Heterogeneous Integration on Silicon
by Changming Chen, Junyu Li, Chunxue Wang, Yingyan Huang, Daming Zhang, Zuosen Shi, Zhanchen Cui, Fei Yi and Seng-Tiong Ho
Photonics 2021, 8(10), 433; https://doi.org/10.3390/photonics8100433 - 09 Oct 2021
Cited by 1 | Viewed by 2843
Abstract
In this work, a photonic device integration platform capable of integration of active-passive InP-based photonic devices without the use of material regrowth is introduced. The platform makes use of an adiabatic active-layer waveguide connection (ALWC) to move an optical beam between active and [...] Read more.
In this work, a photonic device integration platform capable of integration of active-passive InP-based photonic devices without the use of material regrowth is introduced. The platform makes use of an adiabatic active-layer waveguide connection (ALWC) to move an optical beam between active and passive devices. The performance of this platform is analyzed using an example made up of four main sections: (1) a fiber coupling section for enabling vertical beam coupling from optical fiber into the photonic chip using a mode-matched surface grating with apodized duty cycles; (2) a transparent waveguide section for realizing passive photonic devices; (3) an adiabatic mode connection structure for moving the optical beam between passive and active device sections; and (4) an active device section for realizing active photonic devices. It is shown that the coupled surface grating, when added with a bottom gold reflector, can achieve a high chip-to-fiber coupling efficiency (CE) of 88.3% at 1550 nm. The adiabatic active-layer mode connection structure has an optical loss of lower than 1% (CE > 99%). The active device section can achieve an optical gain of 20 dB/mm with the use of only 3 quantum wells. The optimized structural parameters of the entire waveguide module are analyzed and discussed. Full article
(This article belongs to the Special Issue Silicon Based Integrated Optics)
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Review

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27 pages, 4200 KiB  
Review
Advancement in Silicon Integrated Photonics Technologies for Sensing Applications in Near-Infrared and Mid-Infrared Region: A Review
by Nikolay L. Kazanskiy, Svetlana N. Khonina and Muhammad A. Butt
Photonics 2022, 9(5), 331; https://doi.org/10.3390/photonics9050331 - 11 May 2022
Cited by 17 | Viewed by 4856
Abstract
Exploration and implementation of silicon (Si) photonics has surged in recent years since both photonic component performance and photonic integration complexity have considerably improved. It supports a wide range of datacom and telecom applications, as well as sensors, including light detection and ranging, [...] Read more.
Exploration and implementation of silicon (Si) photonics has surged in recent years since both photonic component performance and photonic integration complexity have considerably improved. It supports a wide range of datacom and telecom applications, as well as sensors, including light detection and ranging, gyroscopes, biosensors, and spectrometers. The advantages of low-loss Si WGs with compact size and excellent uniformity, resulting from the high quality and maturity of the Si complementary metal oxide semiconductor (CMOS) environment, are major drivers for using Si in photonics. Moreover, it has a high refractive index and a reasonably large mid-infrared (MIR) transparency window, up to roughly 7 μm wavelength, making it beneficial as a passive mid-IR optical material. Several gases and compounds with high absorption properties in the MIR spectral region are of prodigious curiosity for industrial, medicinal, and environmental applications. In comparison to current bulky systems, the implementation of Si photonics devices in this wavelength range might allow inexpensive and small optical sensing devices with greater sensitivity (S), power usage, and mobility. In this review, recent advances in Si integrated photonic sensors working in both near-infrared (NIR) and MIR wavelength ranges are discussed. We believe that this paper will be valuable for the scientific community working on Si photonic sensing devices. Full article
(This article belongs to the Special Issue Silicon Based Integrated Optics)
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19 pages, 8726 KiB  
Review
Silicon-Based Graphene Electro-Optical Modulators
by Ming Jin, Ziyi Wei, Yanfang Meng, Haowen Shu, Yuansheng Tao, Bowen Bai and Xingjun Wang
Photonics 2022, 9(2), 82; https://doi.org/10.3390/photonics9020082 - 31 Jan 2022
Cited by 10 | Viewed by 5452
Abstract
With the increasing demand for capacity in communications networks, the use of integrated photonics to transmit, process and manipulate digital and analog signals has been extensively explored. Silicon photonics, exploiting the complementary-metal-oxide-semiconductor (CMOS)-compatible fabrication technology to realize low-cost, robust, compact, and power-efficient integrated [...] Read more.
With the increasing demand for capacity in communications networks, the use of integrated photonics to transmit, process and manipulate digital and analog signals has been extensively explored. Silicon photonics, exploiting the complementary-metal-oxide-semiconductor (CMOS)-compatible fabrication technology to realize low-cost, robust, compact, and power-efficient integrated photonic circuits, is regarded as one of the most promising candidates for next-generation chip-scale information and communication technology (ICT). However, the electro-optic modulators, a key component of Silicon photonics, face challenges in addressing the complex requirements and limitations of various applications under state-of-the-art technologies. In recent years, the graphene EO modulators, promising small footprints, high temperature stability, cost-effective, scalable integration and a high speed, have attracted enormous interest regarding their hybrid integration with SiPh on silicon-on-insulator (SOI) chips. In this paper, we summarize the developments in the study of silicon-based graphene EO modulators, which covers the basic principle of a graphene EO modulator, the performance of graphene electro-absorption (EA) and electro-refractive (ER) modulators, as well as the recent advances in optical communications and microwave photonics (MWP). Finally, we discuss the emerging challenges and potential applications for the future practical use of silicon-based graphene EO modulators. Full article
(This article belongs to the Special Issue Silicon Based Integrated Optics)
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