Near- and Mid-Infrared Photonics Technologies
A special issue of Photonics (ISSN 2304-6732).
Deadline for manuscript submissions: closed (31 March 2022) | Viewed by 18943
Special Issue Editors
Interests: optoelectronics; Si photonics; nanotechnology
Interests: high-end circuit system; next generation imaging; optoelectronic integration; cutting-edge photonics design
Special Issue Information
Dear Colleague,
The near- and mid-infrared (NIR & MIR) wavelength range of the electromagnetic spectrum (1.55~12 μm) is a technologically important spectral region for numerous applications in defense and civilian systems including: infrared light source for sensing system, video surveillance security cameras, future automotive night vision, integrated night vision in smartphones, and in other mobile/wearable electronics. In the past few decades, much progress has been made in development of infrared optoelectronics, ranging from materials growth to device demonstration. The current market-dominating NIR & MIR technologies mainly rely on group III-V (such as InGaAs and InSb) and group II-VI (such as HgCdTe) materials. Recently, a novel group-IV material system, GeSn/SiGeSn has drawn much attention as an alternative technique for IR applications. Since future applications will require better performance and novel functionalities of devices, in-depth studies on IR materials and devices are highly desirable, which ultimately could lead to the new generation of photonic integrated circuits.
This Special Issue aims to explore the cutting-edge technologies for NIR & MIR optoelectronics for next generation integrated photonics, and will focus on the recent developments and strategies regarding state-of-the-art IR materials and devices. Topics of interest include but are not limited to the following areas:
- Study of IR material growth mechanism
- Characterization of material and optical properties
- Development of optoelectronic devices operating in IR wavelength range
- Development of photonics integration system
- Exploring the novel on-chip integration technique
Dr. Wei Du
Dr. Lianghua Miao
Dr. Huong Tran
Guest Editors
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