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Photonics
Special Issues
Near- and Mid-Infrared Photonics Technologies
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Near- and Mid-Infrared Photonics Technologies

A special issue of Photonics (ISSN 2304-6732).

Deadline for manuscript submissions: closed (31 March 2022) | Viewed by 14359

Special Issue Editors

Dr. Wei Du

E-Mail Website
Guest Editor
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA
Interests: optoelectronics; Si photonics; nanotechnology
Dr. Lianghua Miao

E-Mail
Guest Editor
Technology Development Division, Brookman Technology, Inc., Hamamatsu, Shizuoka, Japan
Interests: high-end circuit system; next generation imaging; optoelectronic integration; cutting-edge photonics design
Dr. Huong Tran

E-Mail Website
Guest Editor
Department of Electrical Engineering, University of Arkansas ENRC 3615, 700 Research Center Blvd, Fayetteville, AR, USA
Interests: semiconductor optoelectronic devices; Group IV semiconductor; GeSn based infrared detectors

Special Issue Information

Dear Colleague,

The near- and mid-infrared (NIR & MIR) wavelength range of the electromagnetic spectrum (1.55~12 μm) is a technologically important spectral region for numerous applications in defense and civilian systems including: infrared light source for sensing system, video surveillance security cameras, future automotive night vision, integrated night vision in smartphones, and in other mobile/wearable electronics. In the past few decades, much progress has been made in development of infrared optoelectronics, ranging from materials growth to device demonstration. The current market-dominating NIR & MIR technologies mainly rely on group III-V (such as InGaAs and InSb) and group II-VI (such as HgCdTe) materials. Recently, a novel group-IV material system, GeSn/SiGeSn has drawn much attention as an alternative technique for IR applications. Since future applications will require better performance and novel functionalities of devices, in-depth studies on IR materials and devices are highly desirable, which ultimately could lead to the new generation of photonic integrated circuits.

This Special Issue aims to explore the cutting-edge technologies for NIR & MIR optoelectronics for next generation integrated photonics, and will focus on the recent developments and strategies regarding state-of-the-art IR materials and devices. Topics of interest include but are not limited to the following areas:

  • Study of IR material growth mechanism
  • Characterization of material and optical properties
  • Development of optoelectronic devices operating in IR wavelength range
  • Development of photonics integration system
  • Exploring the novel on-chip integration technique

Dr. Wei Du
Dr. Lianghua Miao
Dr. Huong Tran
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (5 papers)

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Research

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10 pages, 1135 KiB  
Communication
Interferometric Technique for the Spectral Characterization of High Frequency Current-Modulated Mid-Infrared Semiconductor Lasers
by Marc-Simon Bahr and Marcus Wolff
Photonics 2021, 8(10), 443; https://doi.org/10.3390/photonics8100443 - 14 Oct 2021
Cited by 1 | Viewed by 1815
Abstract
We describe two methods, based on Michelson interferometery, that enable the determination of the absolute wavelength of current-modulated semiconductor lasers. By non-linear regression of the instantaneous frequency of the interference signal, the rate of change of the wavelength of the radiation can be [...] Read more.
We describe two methods, based on Michelson interferometery, that enable the determination of the absolute wavelength of current-modulated semiconductor lasers. By non-linear regression of the instantaneous frequency of the interference signal, the rate of change of the wavelength of the radiation can be inferred. Alternatively, the absolute wavelength can be directly calculated from the maxima and minima of the interference signal. In both cases a reference absorption line enables the determination of the absolute wavelength. Both methods offer respective advantages. The methods allow a highly resolved wavelength measurement under lower kilohertz range current-modulation with relatively little effort. As a result, we present the rates of wavelength change and absolute wavelengths exemplarily for a specific interband cascade laser. It is furthermore shown that the spectral dynamic range of the laser decreases with increasing modulation frequency. Full article
(This article belongs to the Special Issue Near- and Mid-Infrared Photonics Technologies)
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19 pages, 4916 KiB  
Article
Detection of Small Moving Objects in Long Range Infrared Videos from a Change Detection Perspective
by Chiman Kwan and Jude Larkin
Photonics 2021, 8(9), 394; https://doi.org/10.3390/photonics8090394 - 16 Sep 2021
Cited by 14 | Viewed by 2412
Abstract
Detection of small moving objects in long range infrared (IR) videos is challenging due to background clutter, air turbulence, and small target size. In this paper, we present two unsupervised, modular, and flexible frameworks to detect small moving targets. The key idea was [...] Read more.
Detection of small moving objects in long range infrared (IR) videos is challenging due to background clutter, air turbulence, and small target size. In this paper, we present two unsupervised, modular, and flexible frameworks to detect small moving targets. The key idea was inspired by change detection (CD) algorithms where frame differences can help detect motions. Our frameworks consist of change detection, small target detection, and some post-processing algorithms such as image denoising and dilation. Extensive experiments using actual long range mid-wave infrared (MWIR) videos with target distances beyond 3500 m from the camera demonstrated that one approach, using Local Intensity Gradient (LIG) only once in the workflow, performed better than the other, which used LIG in two places, in a 3500 m video, but slightly worse in 4000 m and 5000 m videos. Moreover, we also investigated the use of synthetic bands for target detection and observed promising results for 4000 m and 5000 m videos. Finally, a comparative study with two conventional methods demonstrated that our proposed scheme has comparable performance. Full article
(This article belongs to the Special Issue Near- and Mid-Infrared Photonics Technologies)
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20 pages, 5501 KiB  
Article
Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates
by Rajeev R. Kosireddy, Stephen T. Schaefer, Marko S. Milosavljevic and Shane R. Johnson
Photonics 2021, 8(6), 215; https://doi.org/10.3390/photonics8060215 - 11 Jun 2021
Cited by 1 | Viewed by 1961
Abstract
Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic [...] Read more.
Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed. Full article
(This article belongs to the Special Issue Near- and Mid-Infrared Photonics Technologies)
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Review

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14 pages, 2560 KiB  
Review
Advances in Mid-Infrared Single-Photon Detection
by Stefano Dello Russo, Arianna Elefante, Daniele Dequal, Deborah Katia Pallotti, Luigi Santamaria Amato, Fabrizio Sgobba and Mario Siciliani de Cumis
Photonics 2022, 9(7), 470; https://doi.org/10.3390/photonics9070470 - 06 Jul 2022
Cited by 16 | Viewed by 3850
Abstract
The current state of the art of single-photon detectors operating in the mid-infrared wavelength range is reported in this review. These devices are essential for a wide range of applications, such as mid-infrared quantum communications, sensing, and metrology, which require detectors with high [...] Read more.
The current state of the art of single-photon detectors operating in the mid-infrared wavelength range is reported in this review. These devices are essential for a wide range of applications, such as mid-infrared quantum communications, sensing, and metrology, which require detectors with high detection efficiency, low dark count rates, and low dead times. The technological challenge of moving from the well-performing and commercially available near-infrared single-photon detectors to mid-infrared detection is discussed. Different approaches are explored, spanning from the stoichiometric or geometric engineering of a large variety of materials for infrared applications to the exploitation of alternative novel materials and the implementation of proper detection schemes. The three most promising solutions are described in detail: superconductive nanowires, avalanche photodiodes, and photovoltaic detectors. Full article
(This article belongs to the Special Issue Near- and Mid-Infrared Photonics Technologies)
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Other

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10 pages, 1443 KiB  
Technical Note
Comments on New Integrative Photomedicine Equipment for Photobiomodulation and COVID-19
by Gerhard Litscher and Laura Marinela Ailioaie
Photonics 2021, 8(8), 303; https://doi.org/10.3390/photonics8080303 - 29 Jul 2021
Cited by 4 | Viewed by 2942
Abstract
Up to now it has not yet been scientifically proven whether the technical methods of photonics in the field of photobiomodulation (PBM), photodynamic therapy (PDT), and laser acupuncture in connection with COVID-19 have achieved effective medical success. As part of this short technical [...] Read more.
Up to now it has not yet been scientifically proven whether the technical methods of photonics in the field of photobiomodulation (PBM), photodynamic therapy (PDT), and laser acupuncture in connection with COVID-19 have achieved effective medical success. As part of this short technical note, an overview of the current scientific status is given and new equipment from our own research area is briefly presented. Although there are still many unanswered questions, it seems to be emerging that PBM and PDT in connection with the corresponding photosensitizers may make it appear worthwhile to perform experimental and clinical studies, primarily as so-called home therapy studies. In any case, the technical requirements for this are already in progress. Full article
(This article belongs to the Special Issue Near- and Mid-Infrared Photonics Technologies)
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