Recent Breakthroughs in Semiconductor Lasers

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Lasers, Light Sources and Sensors".

Deadline for manuscript submissions: closed (20 December 2023) | Viewed by 3033

Special Issue Editors


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Guest Editor
Meta Platforms Inc., Menlo Park, CA, USA
Interests: semiconductor laser; quantum dots lasers; photonic integrated circuits; laser integration; DFB laser; MOCVD

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Guest Editor
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China
Interests: epitaxial growth of compound semiconductors; design and fabrication of optoelectronic devices; applications of optoelectronic devices for imaging and sensing
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Special Issue Information

Dear Colleagues,

This Special Issue focuses on the recent breakthroughs of novel, high-performance semiconductor lasers for various applications, including communication, sensing, and display applications. In recent years, considerable progress has been made in the development of semiconductor lasers. On the one hand, demand for emerging applications drives research into high-performance semiconductor lasers. For example, for coherent communication, a laser with high power and narrow linewidth output is desired, as is frequency-modulated continuous-wave radar (FMCW) LiDAR for self-driving applications, and high-performance fully visible spectrum lasers (red, green, and blue) for rapidly growing AR/VR display applications. On the other hand, the development of semiconductor lasers is driven by new physics applied to lasers, such as topological-cavity lasers.

Dr. Lei Wang
Prof. Dr. Jiang Wu
Guest Editors

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Keywords

  • laser on silicon
  • quantum dot lasers
  • narrow linewidth lasers
  • nanolasers
  • topological-cavity lasers
  • integrated lasers on photonic integrated circuits
  • high-efficiency laser diode

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Published Papers (1 paper)

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Review

13 pages, 1635 KiB  
Review
Review of 1.55 μm Waveband Integrated External Cavity Tunable Diode Lasers
by Linyu Zhang, Xuan Li, Wei Luo, Junce Shi, Kangxun Sun, Meiye Qiu, Zhaoxuan Zheng, Huiying Kong, Jinhui Zhou, Chi Zhang, Zaijin Li, Yi Qu, Zhongliang Qiao and Lin Li
Photonics 2023, 10(11), 1287; https://doi.org/10.3390/photonics10111287 - 20 Nov 2023
Cited by 1 | Viewed by 2409
Abstract
The 1.55 μm waveband integrated external cavity tunable diode lasers have excellent merits such as their small volume, low cost, low power consumption, wide tuning range, narrow linewidth, large side mode suppression ratio, and high output power. These merits have attracted many applications [...] Read more.
The 1.55 μm waveband integrated external cavity tunable diode lasers have excellent merits such as their small volume, low cost, low power consumption, wide tuning range, narrow linewidth, large side mode suppression ratio, and high output power. These merits have attracted many applications for the lasers, such as in wavelength division multiplexing, passive optical networks, mobile backhaul, and spectral sensing technology. In this paper, firstly, the basic structure and principle of integrated external cavity tunable diode lasers are introduced, and then two main integrated structures of 1.55 μm waveband external cavity tunable diode lasers are reviewed and compared in detail, namely the hybrid integrated structure and monolithic integrated structure of 1.55 μm waveband integrated external cavity tunable diode lasers. Finally, the research progress in 1.55 μm waveband integrated external cavity tunable diode lasers in the last decade are summarised, and the advantages and disadvantages of 1.55 μm waveband integrated external cavity tunable diode lasers are analysed. The results show that, with the transformation of optical communication into more complex modulation formats, it is necessary to integrate miniature 1.55 μm waveband external cavity tunable diode lasers. Low-cost integrated 1.55 μm waveband external cavity tunable diode lasers are expected to be used in the next generation of optical transceivers in small-factor modules. Full article
(This article belongs to the Special Issue Recent Breakthroughs in Semiconductor Lasers)
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