Low-Dimensional Optical Materials: Optical Properties and Applications

A special issue of Photonics (ISSN 2304-6732).

Deadline for manuscript submissions: closed (30 June 2023) | Viewed by 2744

Special Issue Editor


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Guest Editor
Associate Professor, Department of Physics, Faculty of Science, Universiti Malaya, Kuala Lumpur 50603, Malaysia
Interests: optical materials and applications

Special Issue Information

Dear Colleagues,

Low-dimensional optical materials have been attracting attention from the optical materials research community due to their potential in various applications such as solar cells, light emitting diodes, photodetectors, waveguides and lasers. Low-dimensional optical materials such as transition metal oxide (TMO) semiconductors, transition metal dichalcogenides (TMDs), II-IV and III-V semiconductors, carbon-based materials, organic semiconductors and perovskites have shown a new optical phenomenon, which led to the improvement in device performances within a relatively acceptable technology development time. This Special Issue invites manuscripts that introduce the recent advances related to low-dimensional optical materials and their applications. All theoretical and experimental papers are accepted. Topics include, but are not limited to, the following:

  • Synthesis and growth mechanism of low-dimensional optical materials;
  • Applications: solar cells, LEDs, photodetectors, waveguides, lasers;
  • Non-linear optical devices;
  • Optical responses of low-dimensional materials;
  • Optical properties of low-dimensional organic or inorganic materials;
  • Characterization of low-dimensional optical materials.

Dr. Azzuliani Supangat
Guest Editor

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Keywords

  • optical materials
  • optical properties
  • optical devices

Published Papers (2 papers)

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Research

18 pages, 3004 KiB  
Article
Density-Functional Study of the Si/SiO2 Interfaces in Short-Period Superlattices: Vibrational States and Raman Spectra
by Mikhail Smirnov, Evgenii Roginskii, Aleksandr Savin, Aleksandr Oreshonkov and Dmitrii Pankin
Photonics 2023, 10(8), 902; https://doi.org/10.3390/photonics10080902 - 04 Aug 2023
Viewed by 1044
Abstract
Raman spectroscopy has proven its effectiveness as a highly informative and sensitive method for the nondestructive analysis of layered nanostructures and their interfaces. However, there is a lack of information concerning the characteristic phonon modes and their activity in Si/SiO2 nanostructures. In [...] Read more.
Raman spectroscopy has proven its effectiveness as a highly informative and sensitive method for the nondestructive analysis of layered nanostructures and their interfaces. However, there is a lack of information concerning the characteristic phonon modes and their activity in Si/SiO2 nanostructures. In order to overcome this problem, the phonon states and Raman spectra of several Si/SiO2 superlattices (SL) with layer thicknesses varied within 0.5–2 nm are studied using DFT-based computer modeling. Two types of structures with different interfaces between crystalline silicon and SiO2 cristobalite were studied. A relationship between the phonon states of heterosystems and the phonon modes of the initial crystals was established. Estimates of the parameters of deformation potentials are obtained, with the help of which the shifts of phonon frequencies caused by elastic strains in the materials of the SL layers are interpreted. The dependence of intense Raman lines on the SL structure has been studied. Several ways have been proposed to use this information, both for identifying the type of interface and for estimating the structural parameters. The obtained information will be useful for the spectroscopic characterization of the silicon/oxide interfaces. Full article
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11 pages, 2278 KiB  
Article
Dicarbocyanine Dye-Based Organic Photodiodes
by Amirul Ashraf Md Sabri, Fadlan Arif Natashah, Syaza Nafisah Hisamuddin, Nur Adilah Roslan, Tahani M. Bawazeer, Mohammad S. Alsoufi and Azzuliani Supangat
Photonics 2022, 9(12), 947; https://doi.org/10.3390/photonics9120947 - 07 Dec 2022
Viewed by 1317
Abstract
We report on the utilization of 1′-1′-diethyl-4,4′-dicarbocyanine iodide (DDCI-4) as a photoactive material for organic photodiodes (OPDs). A device was fabricated using a ternary blended ratio in the conventional stack order of ITO/PEDOT:PSS/P3HT:DDCI-4:OXCBA/Al to improve stability and enhance light absorption. An investigation was [...] Read more.
We report on the utilization of 1′-1′-diethyl-4,4′-dicarbocyanine iodide (DDCI-4) as a photoactive material for organic photodiodes (OPDs). A device was fabricated using a ternary blended ratio in the conventional stack order of ITO/PEDOT:PSS/P3HT:DDCI-4:OXCBA/Al to improve stability and enhance light absorption. An investigation was carried out into the optical and morphological characteristics of the device along with its electrical performance using different concentrations of DDCI-4 in a blended ratio of P3HT:DDCI-4:OXCBA in the photoactive layer. The mechanism of the OPD device and its performance with a gradual increase in DDCI-4 concentration is explained throughout this work, in which the increase in DDCI-4 concentration caused the dislocation defect and a decrease in charge carriers. The appropriate concentration of DDCl-4 resulted in improved light broadening, especially in near-infrared (NIR) regions. Full article
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