Special Issue "2D Materials for Nanoelectronics"

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: 20 March 2021.

Special Issue Editor

Prof. Dr. Mircea Dragoman
Website SciProfiles
Guest Editor
National Institute for Research and Development in Microtechnology (IMT), Str. Erou Iancu Nicolae 126A, Voluntari 077190, Romania
Interests: graphene; nanoelectronics; microwaves; optoelectronics; microelectronics and semiconductor engineering; electronic engineering; ferroelectric

Special Issue Information

Dear Colleagues,

Nanoelectronics is the main beneficiary of the discoveries in 2D materials, driving electronics at the atomic scale. Moore’s law will not end, but will be saturated at certain dimensions of actual CMOS transistors since quantum and thermal effects will downgrade the performances of Si transistors. Therefore, alternatives are being sought after for new materials, new electronic devices, and new functionalities, placing 2D materials in the main stream of research today. Of course, there are many challenges for 2D materials to be applied in nanoelectronics: (i) the growth of 2D materials including graphene at wafer scale with a very reduced number of defects; (ii) low contact resistances; (iii) the interfaces between 2D materials and the ambient conditions; and many others. This Special Issue will attempt to address these challenges.

Prof. Dr. Mircea Dragoman
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • The growth of 2D materials (including graphene) at wafer scale
  • Transistors based on 2D materials (including graphene) and heterostructures
  • Sensors based on 2D materials and heterostructures
  • 2D materials, artificial synapses and neurons, and neuromorphic computing
  • Quantum computing based on 2D materials
  • Integrated circuits based on 2D materials

Published Papers (5 papers)

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Research

Open AccessArticle
Benchmark Investigation of Band-Gap Tunability of Monolayer Semiconductors under Hydrostatic Pressure with Focus-On Antimony
Nanomaterials 2020, 10(11), 2154; https://doi.org/10.3390/nano10112154 - 29 Oct 2020
Abstract
In this paper, the band-gap tunability of three monolayer semiconductors under hydrostatic pressure was intensively investigated based on first-principle simulations with a focus on monolayer antimony (Sb) as a semiconductor nanomaterial. As the benchmark study, monolayer black phosphorus (BP) and monolayer molybdenum disulfide [...] Read more.
In this paper, the band-gap tunability of three monolayer semiconductors under hydrostatic pressure was intensively investigated based on first-principle simulations with a focus on monolayer antimony (Sb) as a semiconductor nanomaterial. As the benchmark study, monolayer black phosphorus (BP) and monolayer molybdenum disulfide (MoS2) were also investigated for comparison. Our calculations showed that the band-gap tunability of the monolayer Sb was much more sensitive to hydrostatic pressure than that of the monolayer BP and MoS2. Furthermore, the monolayer Sb was predicted to change from an indirect band-gap semiconductor to a conductor and to transform into a double-layer nanostructure above a critical pressure value ranging from 3 to 5 GPa. This finding opens an opportunity for nanoelectronic, flexible electronics and optoelectronic devices as well as sensors with the capabilities of deep band-gap tunability and semiconductor-to-metal transition by applying mechanical pressure. Full article
(This article belongs to the Special Issue 2D Materials for Nanoelectronics)
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Open AccessArticle
Tunable Microwave Filters Using HfO2-Based Ferroelectrics
Nanomaterials 2020, 10(10), 2057; https://doi.org/10.3390/nano10102057 - 18 Oct 2020
Abstract
In this paper, we present microwave filters that are based on 6-nm-thick ferroelectric thin films of hafnium oxide doped with zirconium (HfZrO), which are tunable continuously in targeted bands of interest within the frequency range 0.1–16 GHz, when the applied direct current (DC) [...] Read more.
In this paper, we present microwave filters that are based on 6-nm-thick ferroelectric thin films of hafnium oxide doped with zirconium (HfZrO), which are tunable continuously in targeted bands of interest within the frequency range 0.1–16 GHz, when the applied direct current (DC) voltage is swept between 0 V and 4 V. Here, we exploit the orthorhombic polar phase in HfO2 through a careful doping using zirconium in an Atomic Layer Deposition (ALD) process, in order to guarantee phase stabilization at room temperature. Polarization versus voltage characterization has been carried out, showing a remanent polarization (Pr) of ~0.8 μC/cm2 and the coercive voltage at ~2.6 V. The average roughness has been found to be 0.2 nm for HfZrO films with a thickness of 6 nm. The uniform topography, without holes, and the low surface roughness demonstrate that the composition and the structure of the film are relatively constant in volume. Three filter configurations (low-pass, high-pass, and band-pass) have been designed, modelled, fabricated, and fully characterized in microwaves, showing a frequency shift of the minimum of the reflection coefficient between 90 MHz and 4.4 GHz, with a minimum insertion loss of approximately 6.9 dB in high-pass configuration. Full article
(This article belongs to the Special Issue 2D Materials for Nanoelectronics)
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Open AccessArticle
The Thermoelectric Properties of Monolayer MAs2 (M = Ni, Pd and Pt) from First-Principles Calculations
Nanomaterials 2020, 10(10), 2043; https://doi.org/10.3390/nano10102043 - 16 Oct 2020
Abstract
The thermoelectric property of the monolayer MAs2 (M = Ni, Pd and Pt) is predicted based on first principles calculations, while combining with the Boltzmann transport theory to confirm the influence of phonon and electricity transport property on the thermoelectric performance. More [...] Read more.
The thermoelectric property of the monolayer MAs2 (M = Ni, Pd and Pt) is predicted based on first principles calculations, while combining with the Boltzmann transport theory to confirm the influence of phonon and electricity transport property on the thermoelectric performance. More specifically, on the basis of stable geometry structure, the lower lattice thermal conductivity of the monolayer NiAs2, PdAs2 and PtAs2 is obtained corresponding to 5.9, 2.9 and 3.6 W/mK. Furthermore, the results indicate that the monolayer MAs2 have moderate direct bang-gap, in which the monolayer PdAs2 can reach 0.8 eV. The Seebeck coefficient, power factor and thermoelectric figure of merit (ZT) were calculated at 300, 500 and 700 K by performing the Boltzmann transport equation and the relaxation time approximation. Among them, we can affirm that the monolayer PdAs2 possesses the maximum ZT of about 2.1, which is derived from a very large power factor of 3.9 × 1011 W/K2ms and lower thermal conductivity of 1.4 W/mK at 700 K. The monolayer MAs2 can be a promising candidate for application at thermoelectric materials. Full article
(This article belongs to the Special Issue 2D Materials for Nanoelectronics)
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Open AccessArticle
Functionalization of Molybdenum Disulfide via Plasma Treatment and 3-Mercaptopropionic Acid for Gas Sensors
Nanomaterials 2020, 10(9), 1860; https://doi.org/10.3390/nano10091860 - 17 Sep 2020
Abstract
Monolayer and multilayer molybdenum disulfide (MoS2) materials are semiconductors with direct/indirect bandgaps of 1.2–1.8 eV and are attractive due to their changes in response to electrical, physicochemical, biological, and mechanical factors. Since the desired electrical properties of MoS2 are known, [...] Read more.
Monolayer and multilayer molybdenum disulfide (MoS2) materials are semiconductors with direct/indirect bandgaps of 1.2–1.8 eV and are attractive due to their changes in response to electrical, physicochemical, biological, and mechanical factors. Since the desired electrical properties of MoS2 are known, research on its electrical properties has increased, with focus on the deposition and growth of large-area MoS2 and its functionalization. While research on the large-scale production of MoS2 is actively underway, there is a lack of studies on functionalization approaches, which are essential since functional groups can help to dissolve particles or provide adequate reactivity. Strategies for producing films of functionalized MoS2 are rare, and what methods do exist are either complex or inefficient. This work introduces an efficient way to functionalize MoS2. Functional groups are formed on the surface by exposing MoS2 with surface sulfur vacancies generated by plasma treatment to 3-mercaptopropionic acid. This technique can create 1.8 times as many carboxyl groups on the MoS2 surface compared with previously reported strategies. The MoS2-based gas sensor fabricated using the proposed method shows a 2.6 times higher sensitivity and much lower detection limit than the untreated device. Full article
(This article belongs to the Special Issue 2D Materials for Nanoelectronics)
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Open AccessArticle
Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode
Nanomaterials 2020, 10(9), 1634; https://doi.org/10.3390/nano10091634 - 20 Aug 2020
Abstract
Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in simple cross-point arrays. [...] Read more.
Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in simple cross-point arrays. For this reason, a cost-effective 3D vertical RRAM (VRRAM) structure which requires a single pivotal lithography step is attracting significant attention from both the scientific community and the industry. Integrating an extremely thin plane electrode to such a structure is a difficult but necessary step to enable high memory density. In addition, experimentally verifying and modeling such devices is an important step to designing RRAM arrays with a high noise margin, low resistive-capacitive (RC) delays, and stable switching characteristics. In this work, we conducted an electromagnetic analysis on a 3D vertical RRAM with atomically thin graphene electrodes and compared it with the conventional metal electrode. Based on the experimental device measurement results, we derived a theoretical basis and models for each VRRAM design that can be further utilized in the estimation of graphene-based 3D memory at the circuit and architecture levels. We concluded that a 71% increase in electromagnetic field strength was observed in a 0.3 nm thick graphene electrode when compared to a 5 nm thick metal electrode. Such an increase in the field led to much lower energy consumption and fluctuation range during RRAM switching. Due to unique graphene properties resulting in improved programming behavior, the graphene-based VRRAM can be a strong candidate for stacked storage devices in new memory computing platforms. Full article
(This article belongs to the Special Issue 2D Materials for Nanoelectronics)
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