Low-Dimensional Materials and Related Heterostructures: Promises for Next-Generation Optoelectronic & Electrical Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D:Materials and Processing".

Deadline for manuscript submissions: closed (31 October 2023) | Viewed by 1966

Special Issue Editors


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Guest Editor
School of Physics, University of Electronic Science and Technology of China, Chengdu 610056, China
Interests: computational materials and physics; excited-state MD; light-matter interaction; optoelectronic materials and devices; optical crystals
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Guest Editor
School of Electronic Information Engineering, Yangtze Normal University, Chongqing 408100, China
Interests: first-principles calculations; 2D materials and hetero structures; optoelectronic materials and devices; photocatalysis; electrocatalysis; energy storage materials and devices
Special Issues, Collections and Topics in MDPI journals
Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University, Prague, Czechia
Interests: 2D materials; magnetism; spin dynamics; excited state dynamics

Special Issue Information

Dear Colleagues,

With the development of integrated circuits according to Moore’s law, traditional silicon-based devices have gradually reached their performance limitation. Thus, we need to explore the new channel for future optoelectronic and electrical devices by using novel low-dimensional materials and heterostructures, in combination with photon-electron fusion technology. Low-dimensional (D) materials, including 0D, 1D, and 2D materials and their hybrid heterostructures, have been increasingly attracting interest due to their unique optical, magnetic, dielectric, electrical, and optoelectronic properties. In addition, the electronic structures and optical properties of low-dimensional materials could be easily modulated by adjusting the chemical compositions, stacking order, external electric/magnetic field, light, doping, substrates, etc. However, theoretical and experimental studies on electronic, optical and magnetic properties for those low-dimensional hybrid materials have not been sufficiently explored yet. Particularly, thorough theoretical insights into the light-induced non-equilibrium processes and physical figures of the dynamics between photon, electron, spin, and phonon are still lacking. Anyway, these novel nanomaterials and techniques have been becoming a hot research topic for next-generation optoelectronic and electronic devices.

In this Special Issue, we encourage submissions from researchers who are working on computational, theoretical and experimental studies of novel low-dimensional materials for optoelectronic and electronic devices, ranging from materials synthesis and characterization, and device fabrications to optoelectronic and electromagnetic simulations (multi-scale computational simulations) and thermal management. Important topics of growing interest are the 0 dimensional (0D), 1D, and 2D materials/heterostructures with promises for next-generation optoelectronic and electronic devices where we can see rapid development, and we invite such topics for inclusion in this Special Issue.

Prof. Dr. Liujiang Zhou
Dr. Guangzhao Wang
Dr. Junjie He
Guest Editors

Manuscript Submission Information

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Keywords

  • low-dimensional materials
  • two-dimensional materials
  • dynamics
  • optoelectronic and electronic devices
  • multi-scale simulations

Published Papers (1 paper)

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Research

10 pages, 2751 KiB  
Article
Two-Dimensional Octuple-Atomic-Layer M2Si2N4 (M = Al, Ga and In) with Long Carrier Lifetime
by Yimin Ding, Kui Xue, Jing Zhang, Luo Yan, Qiaoqiao Li, Yisen Yao and Liujiang Zhou
Micromachines 2023, 14(2), 405; https://doi.org/10.3390/mi14020405 - 8 Feb 2023
Viewed by 1552
Abstract
Bulk III-nitride materials MN (M = Al, Ga and In) and their alloys have been widely used in high-power electronic and optoelectronic devices, but stable two-dimensional (2D) III-nitride materials, except h-BN, have not been realized yet. A new kind of 2D III-nitride material [...] Read more.
Bulk III-nitride materials MN (M = Al, Ga and In) and their alloys have been widely used in high-power electronic and optoelectronic devices, but stable two-dimensional (2D) III-nitride materials, except h-BN, have not been realized yet. A new kind of 2D III-nitride material M2Si2N4 (M = Al, Ga and In) is predicted by choosing Si as the appropriate passivation element. The stability, electronic and optical properties of 2D M2Si2N4 materials are studied systematically based on first-principles calculations. The results show that Al2Si2N4 and Ga2Si2N4 are found to be indirect bandgap semiconductors, while In2Si2N4 is a direct bandgap semiconductor. Moreover, Al2Si2N4 and In2Si2N4 have good absorption ability in the visible light region, while Ga2Si2N4 is an ultraviolet-light-absorbing material. Furthermore, the carrier lifetimes of Ga2Si2N4 and In2Si2N4 are as large as 157.89 and 103.99 ns, respectively. All these desirable properties of M2Si2N4 materials make them attractive for applications in electronics and photoelectronics. Full article
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