Advances in GaN- and SiC-Based Electronics: Design and Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 30 May 2024 | Viewed by 360

Special Issue Editor


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Guest Editor
1. School of Electronics Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610000, China
2. Chengdu University of Information Technology, Chengdu 610225, China
Interests: semiconductor materials and power devices; power integrated circuits

Special Issue Information

Dear Colleagues,

The RF and power electronics industry promote the development of the world’s economy, facilitate highly efficient utilization of energy, and allow convenience in daily life. As the typical representative of wide-bandgap technology, GaN- and SiC-based electronic devices contribute to high-efficiency power conversion and advanced, high-efficiency RF communication systems. To support the expanding markets for electric/ hybrid cars, datacenters, renewable energy generation and conversion, and smart grids, GaN- and SiC-based power devices are required for higher power densities, higher breakdown voltages, and lower losses. The challenge of 5G and future 6G networks requires GaN RF devices with high fT, fmax and high efficiency.

Both challenges can be addressed through the development of advanced GaN- and SiC-based electronics, relying on overall optimization from materials, manufacturing technology, device design, and application development. Despite the impressive developments in the past decade, there are still several scientific issues that need to be addressed in order to overcome the limits of GaN and SiC materials. Some issues include the following: (1) the development of low-defect growth methods; (2) advanced device structure optimization for high performance; (3) the optimization of device processing and passivation, with the aim of maximizing device performance; (4) advanced methodologies for driving and thermal management; (5) application-driven integration on both circuit and system levels; (6) reliability analysis and reliability-enhanced technology.

We look forward to receiving your submissions.

 

Prof. Dr. Xiaorong Luo

Guest Editor

Prof. Dr. Xiaorong Luo
Guest Editor

Manuscript Submission Information

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Keywords

  • advanced material structures, growth and characterization
  • power devices
  • RF devices
  • advanced device manufacturing process
  • integration design
  • module technology
  • reliability

Published Papers (1 paper)

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Research

12 pages, 5870 KiB  
Article
Ultra-Wideband Transformer Feedback Monolithic Microwave Integrated Circuit Power Amplifier Design on 0.25 μm GaN Process
by Jialin Luo, Yihui Fan, Jing Wan, Xuming Sun and Xiaoxin Liang
Micromachines 2024, 15(4), 546; https://doi.org/10.3390/mi15040546 - 18 Apr 2024
Viewed by 169
Abstract
This paper presents an ultra-wideband transformer feedback (TFB) monolithic microwave integrated circuit (MMIC) power amplifier (PA) developed using a 0.25 μm gallium nitride (GaN) process. To broaden the bandwidth, a drain-to-gate TFB technique is employed in this PA design, achieving a 117% relative [...] Read more.
This paper presents an ultra-wideband transformer feedback (TFB) monolithic microwave integrated circuit (MMIC) power amplifier (PA) developed using a 0.25 μm gallium nitride (GaN) process. To broaden the bandwidth, a drain-to-gate TFB technique is employed in this PA design, achieving a 117% relative −3 dB bandwidth, extending from 5.4 GHz to 20.3 GHz. At a 28 V supply, the designed PA circuit achieves an output power of 25.5 dBm and a 14 dB small-signal gain in the frequency range of 6 to 19 GHz. Within the 6 to 19 GHz frequency range, the small-signal gain exhibits a flatness of less than 0.78 dB. The PA chip occupies an area of 1.571 mm2. This work is the first to design a power amplifier with on-chip transformer feedback in a compound semiconductor MMIC process, and it enables the use of the widest bandwidth power amplifier on-chip transformer matching network. Full article
(This article belongs to the Special Issue Advances in GaN- and SiC-Based Electronics: Design and Applications)
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