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Electronics
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Steep-Switching Devices
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Steep-Switching Devices

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: closed (30 September 2020) | Viewed by 14146

Special Issue Editor

Prof. Dr. Changhwan Shin

E-Mail Website
Guest Editor
School of Electrical Engineering, College of Engineering, Korea University, Seoul, Korea
Interests: silicon semiconductor devices; cache memory design; ultra-low-voltage device design; SRAM yield enhancement
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The continuous scaling of transistors has significantly improved the device performance and density, but it has resulted in soaring-up power density in integrated circuits. To realize the hyper-connected society (smart cities), ultra-low-power devices for implementing all the infrastructures in smart cities are desperately needed. From this perspective, steep-switching devices such as tunnel FET, negative-capacitance FET, phase transition FET, NEM relays, and feedback FET have drawn a great deal of attention as the saviors for IC chips with ever-increasing power consumption. These devices can be implemented by changing the mechanism for current flow (e.g., band-to-band tunneling), or by exploiting exotic phenomena (e.g., negative capacitance effect). Furthermore, these devices bring with them infinite opportunities to change the world because the steep-switching concept can be applied not only to silicon transistors but also other devices like 2-D material devices for neuromorphic applications.

The main objective of this Special Issue is to accumulate prominent papers which unveil/propose various properties of steep-switching devices and alleviate critical issues from the devices. The interests of this Special Issue include, but are not limited to, the proposal of new materials and structures for these devices, circuit operation using these devices, and analysis/improvement of the performance and fabrication of these devices.

Prof. Dr. Changhwan Shin
Guest Editor

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Negative-capacitance FETs
  • Tunnel FETs
  • Phase-transition FETs
  • Nanoelectromechanical relays
  • Feedback FETs
  • Ultra-low-power applications
  • Neuromorphic applications using steep-switching devices
  • Device structures of steep-switching transistors
  • Materials for steep-switching devices
  • Fabrication of steep-switching devices

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Published Papers (3 papers)

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Research

9 pages, 2352 KiB  
Article
Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model
by Taegeon Kim and Changhwan Shin
Electronics 2020, 9(12), 2141; https://doi.org/10.3390/electronics9122141 - 14 Dec 2020
Cited by 7 | Viewed by 3598
Abstract
Ferroelectric materials have received significant attention as next-generation materials for gates in transistors because of their negative differential capacitance. Emerging transistors, such as the negative capacitance field effect transistor (NCFET) and ferroelectric field-effect transistor (FeFET), are based on the use of ferroelectric materials. [...] Read more.
Ferroelectric materials have received significant attention as next-generation materials for gates in transistors because of their negative differential capacitance. Emerging transistors, such as the negative capacitance field effect transistor (NCFET) and ferroelectric field-effect transistor (FeFET), are based on the use of ferroelectric materials. In this work, using a multidomain 3D phase field model (based on the time-dependent Ginzburg–Landau equation), we investigate the impact of the interface-trapped charge (Qit) on the transient negative capacitance in a ferroelectric capacitor (i.e., metal/Zr-HfO2/heavily doped Si) in series with a resistor. The simulation results show that the interface trap reinforces the effect of transient negative capacitance. Full article
(This article belongs to the Special Issue Steep-Switching Devices)
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12 pages, 4497 KiB  
Article
Electrical Characteristics of Nanoelectromechanical Relay with Multi-Domain HfO2-Based Ferroelectric Materials
by Chankeun Yoon and Changhwan Shin
Electronics 2020, 9(8), 1208; https://doi.org/10.3390/electronics9081208 - 27 Jul 2020
Cited by 1 | Viewed by 3575
Abstract
Since the discovery of ferroelectricity in HfO2-based materials which are comparable to the complementary metal-oxide–semiconductor (CMOS) fabrication process—a negative capacitance effect in the HfO2-based materials has been actively studied. Owing to nonuniform polarization-switching (which is originated from the polycrystalline [...] Read more.
Since the discovery of ferroelectricity in HfO2-based materials which are comparable to the complementary metal-oxide–semiconductor (CMOS) fabrication process—a negative capacitance effect in the HfO2-based materials has been actively studied. Owing to nonuniform polarization-switching (which is originated from the polycrystalline structures of HfO2-based ferroelectric materials), the formation of multi-domains in the HfO2-based materials is inevitable. In previous studies, perovskite-based ferroelectric materials (which is not compatible to CMOS fabrication process) were utilized to improve the electrical properties of a nanoelectromechanical (NEM) relay. In this study, the effects of a multi-domain HfO2-based ferroelectric material on the electrical characteristics of an NEM relay were theoretically examined. Specifically, the number of domains, domain inhomogeneity and ferroelectric thickness of the multi-domain ferroelectric material were modulated and subsequently, its corresponding results were discussed. It was observed that the switching voltage variation was decreased with increasing the number of domains and decreasing domain inhomogeneity. In addition, the switching voltage was decreased with increasing ferroelectric thickness, owing to enhanced voltage amplification. Full article
(This article belongs to the Special Issue Steep-Switching Devices)
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9 pages, 1423 KiB  
Article
Understanding of Polarization-Induced Threshold Voltage Shift in Ferroelectric-Gated Field Effect Transistor for Neuromorphic Applications
by Seungjun Moon, Jaemin Shin and Changhwan Shin
Electronics 2020, 9(5), 704; https://doi.org/10.3390/electronics9050704 - 25 Apr 2020
Cited by 10 | Viewed by 6314
Abstract
A ferroelectric-gated fin-shaped field effect transistor (Fe-FinFET) is fabricated by connecting a Pb(Zr0.2Ti0.8)O3-based ferroelectric capacitor into the gate electrode of FinFET. The ferroelectric capacitor shows coercive voltages of approximately −1.5 V and 2.25 V. The polarization-induced threshold [...] Read more.
A ferroelectric-gated fin-shaped field effect transistor (Fe-FinFET) is fabricated by connecting a Pb(Zr0.2Ti0.8)O3-based ferroelectric capacitor into the gate electrode of FinFET. The ferroelectric capacitor shows coercive voltages of approximately −1.5 V and 2.25 V. The polarization-induced threshold voltage shift in the Fe-FinFET is investigated by regulating the gate voltage sweep range. When the maximum positive gate to source voltage is varied from 4 V to 2 V with a fixed starting negative gate to source voltage, the threshold voltage during the backward sweep is increased from approximately −0.60 V to 1.04 V. In the case of starting negative gate to source voltage variation from −4 V to −0.5 V with a fixed maximum positive gate to source voltage of 4 V, the threshold voltage during the forward sweep is decreased from 1.66 V to 0.87 V. Those results can be elucidated with polarization domain states. Lastly, it is observed that the threshold voltage is mostly increased/decreased when the positive/negative gate voltage sweep range is smaller/larger than the positive/negative coercive voltage, respectively. Full article
(This article belongs to the Special Issue Steep-Switching Devices)
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