Emerging GaN Circuits and Devices Design for Various Applications

Dear Colleagues,

Gallium nitride semiconductors are power semiconductors that have recently emerged. The GaN power semiconductor market is expected to grow at a compound annual growth rate of more than 70%, mainly in the fields of high-speed chargers, 5G/6G communications, and electric vehicles. Recently, many governments have selected GaN-integrated circuits for 6G communication power amplifiers as one of the future leading R&D items.

GaN material represents the highest energy band gap and charge density among semiconductor materials. These characteristics allow GaN transistors to produce high output power densities at high frequencies. In particular, GaN HEMTs on SiC substrates exhibit higher thermal conductivity. GaN-on-Si devices are also being actively researched due to their economic feasibility and possibility of integration with other silicon-based integrated circuits.

In this Special Issue, we invite researchers to submit their original research or review articles that are concerned with “Emerging GaN Circuits and Devices Design for Various Applications”.

Topic

(1) GaN MMICs (wideband amplifiers, integrated transceivers, high power switches, etc.)

(2) High-power GaN amplifier modules

(3) High-voltage GaN driver circuits for electric vehicles 

(4) Highly efficient GaN DC-DC/buck/boost converters

(5) 5G-millimeter-wave GaN power amplifiers

(6) 2G/3G/LTE GaN power amplifier modules

(7) Robust and highly linear GaN low noise amplifiers/mixers/switches/attenuators

(8) GaN-on-Si, GaN-on-SiC HEMTs’ development and device modeling 

(9) GaN device phenomena (self-heating effect, trap effect, frequency dispersion, kink effect, etc.)

(10) 6G GaN IC applications

Prof. Dr. Jihoon Kim
Guest Editor

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