Special Issue "Radio-Frequency High Power Amplifier"

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Electrical, Electronics and Communications Engineering".

Deadline for manuscript submissions: 31 August 2021.

Special Issue Editor

Prof. Jihoon Kim
E-Mail Website
Guest Editor
Department of Electronic Engineering, Pai Chai University, Daejeon 35345, Korea
Interests: broadband; high power RF power amplifier; 5g and IOT RF system and parts development

Special Issue Information

Dear Colleagues,

RF power amplifiers are essential components in military or civil communication systems. For military use, it is used for high-power radio interference jammers or active electronically scanned array (AESA), and for civil use, it is used for 2G, 3G, and 4G transmitters of base stations and mobile terminals. In particular, in the case of civil use, it was mainly designed below 3 GHz in the past, but the operating frequency range is expanding to millimeter wave bands such as 28 GHz or 39 GHz, due to the recent commercialization of 5G communication. In addition, high-power RF power amplifiers are used to generate plasma in semiconductor processes. Recently, due to the development of semiconductor technology, CMOS, GaAs, and GaN-based solid state power amplifiers are actively being developed, but still, many studies have been conducted on vacuum tube-type power amplifiers for high output, depending on the application field. In this Special Issue, we invite researchers to submit their original research or review articles that are concerned with recent advances and applications in RF power amplifiers.

Prof. Jihoon Kim
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

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Keywords

  • RF power amplifiers for military applications
  • 2G, 3G, 4G RF power amplifiers
  • 5G sub-6 RF power amplifiers
  • 5G millimeter-wave power amplifiers
  • RF power amplifiers with high efficiency, high linearity and high output power
  • wideband RF power amplifiers
  • solid-state RF power amplifers (CMOS, GaAs, InP, GaN etc.)
  • vacuum tube RF power amplifiers
  • design guidelines and methods about RF power amplifiers
  • system applications including RF power amplifiers

Published Papers (1 paper)

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Research

Article
Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI
Appl. Sci. 2021, 11(15), 6708; https://doi.org/10.3390/app11156708 - 22 Jul 2021
Viewed by 296
Abstract
This paper presents a fully integrated, four-stack, single-ended, single stage power amplifier (PA) for millimeter-wave (mmWave) wireless applications that was fabricated and designed using 45 nm complementary metal oxide semiconductor silicon on insulator (CMOS SOI) technology. The frequency of operation is from 20 [...] Read more.
This paper presents a fully integrated, four-stack, single-ended, single stage power amplifier (PA) for millimeter-wave (mmWave) wireless applications that was fabricated and designed using 45 nm complementary metal oxide semiconductor silicon on insulator (CMOS SOI) technology. The frequency of operation is from 20 GHz to 30 GHz, with 13.7 dB of maximum gain. The maximum RF (radio frequency) output power (Pout), power-added efficiency (PAE) and output 1 dB compression point are 20.5 dBm, 29% and 18.8 dBm, respectively, achieved at 24 GHz. The error vector magnitude (EVM) of 12.5% was measured at an average channel power of 14.5 dBm at the center of the the 3GPP/NR (third generation partnership project/new radio) FR2 band n258—i.e., 26 GHz—using a 100 MHz 16-quadrature amplitude modulation (QAM) 3GPP/NR orthogonal frequency division modulation (OFDM) signal. Full article
(This article belongs to the Special Issue Radio-Frequency High Power Amplifier)
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