Special Issue "Disruptive Interconnects Technologies for the “More than Moore” Era"

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microelectronics".

Deadline for manuscript submissions: 31 December 2021.

Special Issue Editors

Dr. Ali Roshanghias
E-Mail Website
Guest Editor
Heterogeneous Integration Technologies, Silicon Austria Labs (SAL) GmbH, Villach, Austria
Interests: micro-electronics packaging; interconnects technologies; electronics materials; printed and hybrid electronics; 3D integration and more than Moore technologies
Prof. Dr. Ha Duong Ngo
E-Mail Website
Guest Editor
Hochschule für Technik und Wirtschaft Berlin, University of Applied Sciences, Treskowallee 8, 10318 Berlin, Germany
Interests: microsystems; piezoresistive sensor; sensor for harsh environments; SOI and SiC-based sensor; accelerometers; gas sensor; design and simulation of microsystems; graphene; material research; graphene-based sensors; biosensors; printed sensors; 2D sensors; technologies
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Special Issue Information

Dear Colleagues,

Advanced heterogeneous integration as the key enabler of the “more than Moore” era demands disruptive interconnects technologies. These interconnects enable 3D integration, chip embedding, and enhanced thermal and electrical performances, which lead to device shrinkage, an increase in computing efficiency, superior switching speed, and power. The continued scaling of interconnects has faced cost, integration, thermal, and reliability challenges, which require innovations in terms of both technologies and materials. This Special Issue will cover the most advanced and emerging interconnects. A reliability analysis and failure analysis of the emerging interconnects will also be addressed here. We encourage original research works describing novel interconnecting technologies, materials and processes that can potentially lead to significant advances in the field of microelectronics packaging.

Dr. Ali Roshanghias
Prof. Dr. Ha Duong Ngo
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1800 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 2.5 and 3D interconnects
  • interconnects for flexible and stretchable electronics
  • direct bond interconnects
  • nanomaterials as interconnect
  • wire-bondless packages
  • ultra-fine pitch interconnects
  • interconnects for D2D, D2W, and W2W bonding
  • additive manufactured interconnects and packages
  • sinter-based interconnects

Published Papers

This special issue is now open for submission, see below for planned papers.

Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

Tentative title: Simulation on TSV Protrusion in 3DIC by Direct Loading on Coarse-grained Phase-field Crystal Model

Abstract: Advanced processing nodes beyond 3/2 nm and nano-TSVs are envisioned in the coming More-Than-Moore era. However, thermal management on 3DICs enabled by the TSV technology still presents a challenging problem. The critical issues behind the reliability concern of TSV protrusion lie in the fact that the filler materials have been pushed to a limit where the grain structure or even the atomic-scale structure has to be taken into consideration. Our previous work reproduced the process of TSV protrusion from the atomic scale and highlighted the role of microstructure as well as the loading condition. Here, we report simulation results on TSV protrusion by direct loading on a coarse-grained phase-field crystal model aiming to, first, increase the aspect ratio and size of the simuated TSVs, and second, enable protrusion simulation by direct mechanical loadings.

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