Special Issue "SiC-Based Microsystems"

A special issue of Micromachines (ISSN 2072-666X).

Deadline for manuscript submissions: closed (15 March 2017).

Special Issue Editor

Prof. Dr. Ha Duong Ngo
E-Mail Website
Guest Editor
1. Hochschule für Technik und Wirtschaft Berlin, University of Applied Sciences, Treskowallee 8, 10318 Berlin, Germany 2. Fraunhofer Institute for Reliability and Microintegration IZM, Department Wafer Level Integration, Group Microsensors Technology, Gustav-Meyer-Allee 25, 13355 Berlin, Germany
Interests: microsystems; piezoresistive sensor; sensor for harsh environments; SOI and SiC-based sensor; accelerometers; gas sensor; design and simulation of microsystems; graphene; graphene on silicon carbide (SiC); quantum metrology; environmental sensors; room temperature quantum devices; quantum transport phenomena in room temperature, material research; 2d materials, electrochemical sensors and biosensors; nanocale mechanical sensors
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Special Issue Information

Dear Colleagues,

Microsystems technology continues to grow rapidly. Silicon is currently the dominant platform for Microsystems technology. The material possesses both favorable electrical and mechanical properties to create micro devices and systems. Silicon-based Microsystems leverage the batch fabrication paradigm and benefit from a large body of knowledge regarding masking, deposition, growth, modification, and structuring techniques. But silicon does have some limitations. Silicon softens dramatically and dopants diffuse at high temperature. Standard silicon based devices can no longer be used at temperatures higher 150 °C. In order to develop a new generation of devices, which can survive and operate properly in such harsh environments, well beyond regimes of silicon-based devices, new materials and technologies are necessary.

The compound semiconductor silicon carbide (SiC) possesses a number of properties, e.g., large bandgap, high electron drift velocity, high electric breakdown field, high chemical resistance, radiation hardness, and mechanical strength, which makes it an attractive base material for the fabrication of a series of electronic and micromechanical devices, such as high temperature, high power, high frequency, microwave, optoelectronic, and sensor devices, as well as for applications in chemically- and radiation-harsh environments. Progress in SiC growth and deposition has been made within the last few years, and the significance of SiC as a substrate material has continuously increased. Some prototype and commercial devices using the hexagonal 4H and 6H polytypes have been fabricated

The purpose of this Micromachines Special Issue, on SiC-Based Microsystems, is to get an overview of these activities on developments of new deposition and growth methods, fabrication technologies, new devices and systems, such as sensors and actuators, electronic circuits, wireless modules, and also testing and characterization of such systems.

Prof. Dr. Ha Duong Ngo
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Silicon Carbide
  • SiC MEMS
  • SiC based Microsystems
  • SiC MEMS, Ceramics
  • MEMS for Harsh Environments

Published Papers (3 papers)

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Research

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Open AccessArticle
RF Sputtering, Post-Annealing Treatment and Characterizations of ZnO (002) Thin Films on 3C-SiC (111)/Si (111) Substrates
Micromachines 2017, 8(5), 148; https://doi.org/10.3390/mi8050148 - 07 May 2017
Cited by 4
Abstract
We report on the radio frequency (RF) sputtering of c-axis oriented ZnO thin films on top of epitaxial 3C-SiC-on-Si (111) substrates, which were then subjected to post-annealing treatment at 400, 600 and 800 °C. Grazing incident X-ray Diffraction (XRD) data show that the [...] Read more.
We report on the radio frequency (RF) sputtering of c-axis oriented ZnO thin films on top of epitaxial 3C-SiC-on-Si (111) substrates, which were then subjected to post-annealing treatment at 400, 600 and 800 °C. Grazing incident X-ray Diffraction (XRD) data show that the Full Width Half Maximum (FWHM) values for O2/Ar ratios between 30% and 60% are consistent, with a mean of 0.325° and a standard deviation of 0.03°. This is largely attributed to the smaller lattice mismatch of 5% between the ZnO (002) and SiC (111) films. The quality of the ZnO films deteriorated at the post-annealing treatment of 800 °C, as demonstrated by the increasing value of FWHM diffraction peaks, the reducing value of the peak intensity, the reducing percentage of (002) oriented area under the curve, and the increasing value of biaxial stress. We propose a simple growth model to explain the result. Full article
(This article belongs to the Special Issue SiC-Based Microsystems)
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Open AccessFeature PaperArticle
A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems
Micromachines 2016, 7(10), 193; https://doi.org/10.3390/mi7100193 - 20 Oct 2016
Cited by 4
Abstract
In this paper, we present and discuss our new WSi–WSiN–Pt metallization scheme for SiC-based microsystems for applications in harsh environments. Stoichiometric material WSi was selected as contact material for SiC. The diffusion barrier material WSiN was deposited from the same target as the [...] Read more.
In this paper, we present and discuss our new WSi–WSiN–Pt metallization scheme for SiC-based microsystems for applications in harsh environments. Stoichiometric material WSi was selected as contact material for SiC. The diffusion barrier material WSiN was deposited from the same target as the contact material in order to limit the number of different chemical elements in the scheme. Our scheme was kept as simple as possible regarding the number of layers and chemical elements. Our scheme shows very good long-term stability and suitability for SiC-based microsystems. The experimental evaluation concept used here includes a combination of physical, electrical, and mechanical analysis techniques. This combined advance is necessary since modern physical analysis techniques still offer only limited sensitivity for detecting minimal changes in the metallization scheme. Full article
(This article belongs to the Special Issue SiC-Based Microsystems)
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Open AccessFeature PaperReview
3C-Silicon Carbide Microresonators for Timing and Frequency Reference
Micromachines 2016, 7(11), 208; https://doi.org/10.3390/mi7110208 - 15 Nov 2016
Cited by 2
Abstract
In the drive to miniaturise and integrate reference oscillator components, microelectromechanical systems (MEMS) resonators are excellent candidates to replace quartz crystals. Silicon is the most utilised resonator structural material due to its associated well-established fabrication processes. However, when operation in harsh environments is [...] Read more.
In the drive to miniaturise and integrate reference oscillator components, microelectromechanical systems (MEMS) resonators are excellent candidates to replace quartz crystals. Silicon is the most utilised resonator structural material due to its associated well-established fabrication processes. However, when operation in harsh environments is required, cubic silicon carbide (3C-SiC) is an excellent candidate for use as a structural material, due to its robustness, chemical inertness and high temperature stability. In order to actuate 3C-SiC resonators, electrostatic, electrothermal and piezoelectric methods have been explored. Both electrothermal and piezoelectric actuation can be accomplished with simpler fabrication and lower driving voltages, down to 0.5 V, compared to electrostatic actuation. The vibration amplitude at resonance can be maximised by optimising the design and location of the electrodes. Electrical read out of the resonator can be performed with electrostatic or piezoelectric transduction. Finally, a great deal of research has focused on tuning the resonant frequency of a 3C-SiC resonator by adjusting the DC bias applied to the electrodes, with a higher (up to 160-times) tuning range for electrothermal tuning compared to piezoelectric tuning. Electrothermal tuning lowers the frequency, while piezoelectric tuning can be used to raise the frequency. Full article
(This article belongs to the Special Issue SiC-Based Microsystems)
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