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Special Issue "Crystal Growth from Liquid Phase"
Deadline for manuscript submissions: 15 May 2020.
Interests: crystal growth; computer simulation; fluid flow; heat transfer; mass transfer
Bulk single crystals of semiconductors, oxides, borides, halides, and biomaterials are mostly grown from the melt or solution known as the liquid phase. During crystal growth from the liquid phase, transport structures developing in the growth solution/melt, such as fluid flow, temperature, and concentration fields, significantly affect the quality of grown crystals. Therefore, such transport structures must be better understood and controlled for the growth of high-quality crystals. In this direction, the application of applied electric and magnetic fields and crystal/crucible rotations is considered. Microgravity conditions have also been utilized.
Recent developments in numerical simulations and experimental techniques shed light on the understanding of the relations between the transport structures developing in the growth melt/solution and the crystal quality. Various optimization techniques have been considered to obtain optimum growth conditions for the growth of high quality crystals. Even artificial intelligence (AI), such as neural networks, has been utilized for the optimization of growth techniques and the design of new functional materials.
This Special Issue aims at publishing research findings from various perspectives on bulk crystal growth from the liquid phase. We encourage the submission of original articles in this field by means of numerical simulations and/or experimental approaches, including novel design of growth process, by considering external applied fields and new approaches. Moreover, reviews and feature articles are also welcome. Topics for this issue may include:
- Transport phenomena occurring during growth of bulk crystals from the liquid phase; numerical and experimental;
- Study and control of transport structures in the melt/solution under external fields; numerical and experimental;
- Development and utilization of new growth processes and systems for bulk crystal growth.
Prof. Dr. Yasunori Okano
Prof. Dr. Sadik Dost
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- Bulk single crystal growth
- Liquid phase
- Melt and solution growth
- Applied magnetic and external fields
- Numerical simulations
The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.
Collaboration of Numerical and Experimental Studies on Crystal Growth
Abstract: This paper reports some results of collaboration between numerical and experimental studies on crystal growth of silicon and SiC. The results contains impurity transfer during silicon crystal growth process, and dislocation analysis of silicon and SiC crystals during and after solidification.
Vertical Bridgman Growth of Various Kinds of Single Crystals
Abstract: Vertical Bridgman (VB) growth techniques for various kinds of single crystals are introduced and discussed. In the first approach, compound semiconductors of GaAs and InP are grown by the liquid encapsulated VB growth technique, using pyrolytic boron nitride crucibles, and the role of liquid boric oxide (B2O3) is discussed from the viewpoints of single crystal growth and the elimination of dislocations. In the second approach, various kinds of oxide crystals, such as LiNbO3, LiTaO3, La3Ga5SiO14, La3Ta0.5Ga5.5O14, and β-Ga2O3, are grown by the VB growth technique using platinum and platinum-based rhodium alloy crucibles, and the problems of adherence between the crucibles and crystals grown in them are discussed. In the third approach, α-Al2O3 (sapphire) and α-Al2O3/YAG:Ce eutectics are grown by the VB growth technique using iridium, molybdenum and tungsten crucibles, and the linear thermal expansion coefficients of the crystals grown and the crucibles used are discussed from the viewpoint of crystal release from the crucible and reuse of the crucible.
Defect Engineering in Bulk Crystal Growth Processes
Abstract: Growth conditions directly control the crystal quality and it is of uppermost importance to understand the physical phenomena involved during the growth and how they affect the defect distribution inside the crystal. In this respect, process charts can be drawn in order to quickly define the growth condition for producing a given crystal. A further step forward concerns the precise design of the process for obtaining given crystals with a given quality. For this, devoted numerical simulation software, which are now commercially available at the industrial level, have been developed. Some examples show how numerical simulation can help solving real industrial crystal growth issues.
Application of artificial neural networks in crystal growth
N. Dropka, M. Holena
Abstract: In this review, we summarize the results concerning the application of artificial neural networks (ANNs) in the crystal growth. The main reason for using ANNs is to detect the patterns and relationships in non-linear static and dynamic data sets which are common in crystal growth processes, all in a real time. The fast forecasting is particularly important for the process control, since common CFD simulations are slow and in situ measurements of key process parameters are not feasible. This important machine learning approach thus makes it possible to determine optimized parameters for high-quality up-scaled crystals.