Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG
The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
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Author to whom correspondence should be addressed.
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These authors contributed equally to this article.
Crystals 2019, 9(12), 653; https://doi.org/10.3390/cryst9120653
Received: 13 November 2019 / Revised: 3 December 2019 / Accepted: 4 December 2019 / Published: 7 December 2019
(This article belongs to the Special Issue Crystal Growth from Liquid Phase)
The growth interface instability of large-size SiC growth in top-seeded solution growth (TSSG) is a bottleneck for industrial production. The authors have previously simulated the growth of 4-inch SiC crystals and found that the interface instability in TSSG was greatly affected by the flow field. According to our simulation of the flow field, we proposed a new stepped structure that greatly improved the interface stability of large-size crystal growth. This stepped structure provides a good reference for the growth of large-sized SiC crystals by TSSG in the future.
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Keywords:
computer simulation; interface instability; silicon carbide solution growth; large-sized silicon carbide
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MDPI and ACS Style
Liu, B.; Yu, Y.; Tang, X.; Gao, B. Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG. Crystals 2019, 9, 653.
AMA Style
Liu B, Yu Y, Tang X, Gao B. Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG. Crystals. 2019; 9(12):653.
Chicago/Turabian StyleLiu, Botao; Yu, Yue; Tang, Xia; Gao, Bing. 2019. "Improvement of Growth Interface Stability for 4-Inch Silicon Carbide Crystal Growth in TSSG" Crystals 9, no. 12: 653.
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