Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field
Wang, L.; Takehara, Y.; Sekimoto, A.; Okano, Y.; Ujihara, T.; Dost, S. Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field. Crystals 2020, 10, 111. https://doi.org/10.3390/cryst10020111
Wang L, Takehara Y, Sekimoto A, Okano Y, Ujihara T, Dost S. Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field. Crystals. 2020; 10(2):111. https://doi.org/10.3390/cryst10020111
Chicago/Turabian StyleWang, Lei, Yuto Takehara, Atsushi Sekimoto, Yasunori Okano, Toru Ujihara, and Sadik Dost. 2020. "Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field" Crystals 10, no. 2: 111. https://doi.org/10.3390/cryst10020111