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Open AccessArticle

Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field

1
Department of Materials Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
2
Department of Materials Science, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
3
Crystal Growth Laboratory, University of Victoria, Victoria, BC V8W 3P6, Canada
*
Author to whom correspondence should be addressed.
Crystals 2020, 10(2), 111; https://doi.org/10.3390/cryst10020111
Received: 7 January 2020 / Revised: 30 January 2020 / Accepted: 6 February 2020 / Published: 12 February 2020
(This article belongs to the Special Issue Crystal Growth from Liquid Phase)
Three-dimensional numerical simulations were conducted for the Top-Seeded Solution Growth (TSSG) process of silicon carbide (SiC) crystals. We investigated the influence of coils frequency and peak current, and an applied rotating magnetic field (RMF) on the melt flow developing in this system. Numerical simulation results show that the Marangoni flow in the melt becomes stronger at higher coils frequencies due to the decreasing coils-induced electromagnetic field strength. Results also show that the use of external RMF may improve supersaturation uniformity along the seed if it is properly adjusted with respect to the coils-induced electromagnetic field strength. Furthermore, it is predicted that the application of RMF and seed rotation in the same direction may enhance supersaturation below the seed.
Keywords: SiC crystal growth; TSSG method; flow control SiC crystal growth; TSSG method; flow control
MDPI and ACS Style

Wang, L.; Takehara, Y.; Sekimoto, A.; Okano, Y.; Ujihara, T.; Dost, S. Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field. Crystals 2020, 10, 111.

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