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Dr. Evgeniy N. Mokhov

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Guest Editor

Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russia
Interests: silicon carbide; aluminum nitride; boron nitride, gallium nitride; growth and doping; impurities diffusion; radiation and nonstoichiometric native defects; crystal properties and applications

Special Issue Information

Dear Colleagues,

SiC, GaN and AlN refer to wide bandgap semiconductors with high bond energy. On the basis of this group of semiconductors, various optoelectronic devices can be created, including ultraviolet light-emitting diodes, laser diodes and room temperature quantum emitters, as well as powerful high-frequency, high temperature electronic devices and piezoelectric resonators. However, high-quality bulk crystals of large diameter (4 inches or more) are required for the successful implementation of the industrial production of such devices. The growth of these crystals is one of the most important problems standing in the way of their widespread use in the modern industry. Another problem is the insufficient knowledge of the doping mechanisms, which makes it difficult to obtain a material with the required properties.

The potential topics include, but are not limited to:

Growth of the high quality SiC, AlN and GaN bulk crystals
Doping of the crystals
High temperature diffusion
Native defects and impurities
Application

Dr. Evgeniy N. Mokhov
Guest Editor

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Keywords

Growth of bulk SiC, AlN and GaN crystals
Sublimation growth
Doping
Diffusion
Impurities
Metastable point defects
Characterization
Applications

Published Papers (1 paper)

Research

15 pages, 662 KiB

Open AccessArticle

Isotope Effect in Thermal Conductivity of Polycrystalline CVD-Diamond: Experiment and Theory

by Alexander V. Inyushkin, Alexander N. Taldenkov, Victor G. Ralchenko, Andrey P. Bolshakov and Alexander V. Khomich

Crystals 2021, 11(4), 322; https://doi.org/10.3390/cryst11040322 - 24 Mar 2021

Cited by 2 | Viewed by 2267

Abstract

We measured the thermal conductivity

κ (T)

of polycrystalline diamond with natural (

^{nat}

C) and isotopically enriched (

^{12}

C content up to 99.96 at.%) compositions over a broad temperature T range, from 5 to 410 K. The high quality [...] Read more.

We measured the thermal conductivity

κ (T)

of polycrystalline diamond with natural (

^{nat}

C) and isotopically enriched (

^{12}

C content up to 99.96 at.%) compositions over a broad temperature T range, from 5 to 410 K. The high quality polycrystalline diamond wafers were produced by microwave plasma chemical vapor deposition in CH

_{4}

-H

_{2}

mixtures. The thermal conductivity of

^{12}

C diamond along the wafer, as precisely determined using a steady-state longitudinal heat flow method, exceeds much that of the

^{nat}

C sample at

T > 60

K. The enriched sample demonstrates the value of

κ (298 K) = 25.1 \pm 0.5

W cm

^{- 1}

^{- 1}

that is higher than the ever reported conductivity of natural and synthetic single crystalline diamonds with natural isotopic composition. A phenomenological theoretical model based on the full version of Callaway theory of thermal conductivity is developed which provides a good approximation of the experimental data. The role of different resistive scattering processes, including due to minor isotope

^{13}

C atoms, defects, and grain boundaries, is estimated from the data analysis. The model predicts about a 37% increase of thermal conductivity for impurity and dislocation free polycrystalline chemical vapor deposition (CVD)-diamond with the

^{12}

C-enriched isotopic composition at room temperature. Full article

(This article belongs to the Special Issue Wide Bandgap Semiconductor)

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