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Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes

1
Ruđer Bošković Institute, Bijenička 54, 10 000 Zagreb, Croatia
2
Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370–1292, Japan
*
Author to whom correspondence should be addressed.
Crystals 2019, 9(7), 328; https://doi.org/10.3390/cryst9070328
Received: 4 June 2019 / Revised: 22 June 2019 / Accepted: 26 June 2019 / Published: 27 June 2019
(This article belongs to the Special Issue Development and Investigation of SiC and SiC-based Devices)
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Abstract

We present preliminary results on minority carrier traps in as-grown n-type 4H–SiC Schottky barrier diodes. The minority carrier traps are crucial for charge trapping and recombination processes. In this study, minority carrier traps were investigated by means of minority carrier transient spectroscopy (MCTS) and high-resolution Laplace-MCTS measurements. A single minority carrier trap with its energy level position at Ev + 0.28 eV was detected and assigned to boron-related defects. View Full-Text
Keywords: minority traps; defects; silicon carbide; MCTS; SBD minority traps; defects; silicon carbide; MCTS; SBD
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Capan, I.; Yamazaki, Y.; Oki, Y.; Brodar, T.; Makino, T.; Ohshima, T. Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes. Crystals 2019, 9, 328.

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