Next Article in Journal
Research on Performance Improvement of Photovoltaic Cells and Modules Based on Black Silicon
Next Article in Special Issue
Development and Investigation of SiC and SiC-Based Devices
Previous Article in Journal
Multifunctional Electrochemical Properties of Synthesized Non-Precious Iron Oxide Nanostructures
Previous Article in Special Issue
Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

Influence of Carbon Cap on Self-Diffusion in Silicon Carbide

Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, N-0316 Oslo, Norway
Materials and Nanophysics, Department of Applied Physics, SCI, KTH Royal Institute of Technology, SE-106 91 Stockholm, Sweden
Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
Author to whom correspondence should be addressed.
Crystals 2020, 10(9), 752;
Received: 23 June 2020 / Revised: 20 August 2020 / Accepted: 24 August 2020 / Published: 26 August 2020
(This article belongs to the Special Issue Development and Investigation of SiC and SiC-based devices)
Self-diffusion of carbon (12C and 13C) and silicon (28Si and 30Si) in 4H silicon carbide has been investigated by utilizing a structure containing an isotope purified 4H-28Si12C epitaxial layer grown on an n-type (0001) 4H-SiC substrate, and finally covered by a carbon capping layer (C-cap). The 13C and 30Si isotope profiles were monitored using secondary ion mass spectrometry (SIMS) following successive heat treatments performed at 23002450C in Ar atmosphere using an inductively heated furnace. The 30Si profiles show little redistribution within the studied temperature range, with the extracted diffusion lengths for Si being within the error bar for surface roughening during annealing, as determined by profilometer measurements. On the other hand, a significant diffusion of 13C was observed into the isotope purified layer from both the substrate and the C-cap. A diffusivity of D=8.3×106e10.4/kBT cm2/s for 13C was extracted, in contrast to previous findings that yielded lower both pre-factors and activation energies for C self-diffusion in SiC. The discrepancy between the present measurements and previous theoretical and experimental works is ascribed to the presence of the C-cap, which is responsible for continuous injection of C interstitials during annealing, and thereby suppressing the vacancy mediated diffusion. View Full-Text
Keywords: self-diffusion; Silicon carbide; Carbon cap self-diffusion; Silicon carbide; Carbon cap
Show Figures

Figure 1

MDPI and ACS Style

Bathen, M.E.; Linnarsson, M.; Ghezellou, M.; Ul Hassan, J.; Vines, L. Influence of Carbon Cap on Self-Diffusion in Silicon Carbide. Crystals 2020, 10, 752.

AMA Style

Bathen ME, Linnarsson M, Ghezellou M, Ul Hassan J, Vines L. Influence of Carbon Cap on Self-Diffusion in Silicon Carbide. Crystals. 2020; 10(9):752.

Chicago/Turabian Style

Bathen, Marianne Etzelmüller, Margareta Linnarsson, Misagh Ghezellou, Jawad Ul Hassan, and Lasse Vines. 2020. "Influence of Carbon Cap on Self-Diffusion in Silicon Carbide" Crystals 10, no. 9: 752.

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

Back to TopTop