Advanced Research on Ferroelectric Materials

Dear Colleagues,

Ferroelectric materials, characterized by their switchable spontaneous polarization, are playing an ever-increasing role in rapidly evolving technologies ranging from non-volatile information storage and mechanical-to-electrical energy conversion to high-power energy harvesting. The current materials landscape spans classical perovskite ferroelectrics, multiferroics, silicon-compatible hafnia-based ferroelectrics, ferroelectric semiconductors, and ferroelectric polymers, as well as emerging two-dimensional ferroelectric materials. As a central carrier, ferroelectric polarization can be effectively engineered across multiple length scales through strain and symmetry engineering, interface and defect control, compositional and dimensional design, and external fields, enabling unprecedented control over polar configurations, domain structures, switching kinetics, and cross-coupled responses.

This Special Issue, “Advanced Research on Ferroelectric Materials”, aims to provide a broad and forward-looking snapshot of this dynamic field. It welcomes contributions on ferroelectric oxide thin films and heterostructures, multicomponent bulk ceramics, two-dimensional and other low-dimensional ferroelectric materials, flexible and polymer-based systems, ferroelectric-related functional architectures, and so on. Topics include, but are not limited to, atomic-scale structural design, advanced structural characterization, and theory- and data-driven material exploration, as well as advanced dielectric capacitors, piezoelectric devices, negative-capacitance and ferroelectric memories, memristors, and neuromorphic computing. By assembling reviews, articles, and perspectives from materials science, condensed-matter physics, solid-state chemistry, and device communities, this collection seeks to bridge fundamental mechanisms with application-driven innovation and to inspire the next generation of ferroelectric materials and related technologies.

Dr. Tianyu Li
Dr. Liqiang He
Guest Editors

Manuscript Submission Information

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