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Article

High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications

MIMOS Berhad, Taman Teknologi Malaysia, Bukit Jalil, 57000 Kuala Lumpur, Malaysia
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Appl. Sci. 2019, 9(8), 1587; https://doi.org/10.3390/app9081587
Received: 28 December 2018 / Revised: 10 February 2019 / Accepted: 11 February 2019 / Published: 17 April 2019
Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes. In this paper, the characteristics and performance of carbon-based nanostructure applied on a Trench Metal Oxide Semiconductor MOS barrier Schottky (TMBS) diode were investigated for high temperature application. The structure used for this study was silicon substrate with a trench and filled trench with gate oxide and polysilicon gate. A graphene nanowall (GNW) or carbon nanowall (CNW), as a barrier layer, was grown using the plasma enhanced chemical vapor deposition (PECVD) method. The TMBS device was then tested to determine the leakage current at 60 V under various temperature settings and compared against a conventional metal-based TMBS device using TiSi2 as a Schottky barrier layer. Current-voltage (I-V) measurement data were analyzed to obtain the Schottky barrier height, ideality factor, and series resistance (Rs) values. From I-V measurement, leakage current measured at 60 V and at 423 K of the GNW-TMBS and TiSi2-TMBS diodes were 0.0685 mA and above 10 mA, respectively, indicating that the GNW-TMBS diode has high operating temperature advantages. The Schottky barrier height, ideality factor, and series resistance based on dV/dln(J) vs. J for the GNW were calculated to be 0.703 eV, 1.64, and 35 ohm respectively. View Full-Text
Keywords: graphene nanowall; carbon nanowall; trench Schottky diode; leakage current; Schottky barrier graphene nanowall; carbon nanowall; trench Schottky diode; leakage current; Schottky barrier
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MDPI and ACS Style

Mohd Saman, R.; Wan Sabli, S.K.; Mat Hussin, M.R.; Othman, M.H.; Mohammad Haniff, M.A.S.; Syono, M.I. High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications. Appl. Sci. 2019, 9, 1587. https://doi.org/10.3390/app9081587

AMA Style

Mohd Saman R, Wan Sabli SK, Mat Hussin MR, Othman MH, Mohammad Haniff MAS, Syono MI. High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications. Applied Sciences. 2019; 9(8):1587. https://doi.org/10.3390/app9081587

Chicago/Turabian Style

Mohd Saman, Rahimah, Sharaifah K. Wan Sabli, Mohd R. Mat Hussin, Muhammad H. Othman, Muhammad A.S. Mohammad Haniff, and Mohd I. Syono 2019. "High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications" Applied Sciences 9, no. 8: 1587. https://doi.org/10.3390/app9081587

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