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Applied Sciences
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Design, Development and Application of Microelectronics and Semiconductor Devices
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Design, Development and Application of Microelectronics and Semiconductor Devices

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Applied Physics General".

Deadline for manuscript submissions: 10 May 2025 | Viewed by 1809

Special Issue Editors

Dr. Francisco López-Huerta

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Guest Editor
Faculty of Electrical and Electronic Engineering, Universidad Veracruzana, Boca del Río 94294, Veracruz, Mexico
Interests: design and modelling of MEMS; integrated circuits and microsensors characterization for biomedical, environment and industrial applications; energy harvesting devices
Special Issues, Collections and Topics in MDPI journals
Dr. Edith Osorio de la Rosa

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Guest Editor
CONAHCYT, Universidad Autónoma del Estado de Quintana Roo, Chetumal 77019, Quintana Roo, Mexico
Interests: advanced microelectronics and semiconductors, advancing renewable energy technologies and environmental sensing; development and detailed analysis of porous semiconductor materials for improved solar cell efficiency and fabrication of sensitive biological and chemical sensors; exploration and optimization of solar energy harvesting techniques; design of low-power devices for the Internet of Things (IoT); prioritizing sustainability and energy conservation; sustainable wireless sensor networks powered by innovative energy sources such as microbial fuel cells, contributing to environmental monitoring and development of smart, energy-efficient technologies
Dr. Rosa Maria Woo García

E-Mail Website
Guest Editor
Faculty of Electrical and Electronic Engineering, Universidad Veracruzana, Boca del Río 94294, Veracruz, Mexico
Interests: analog and digital electronics design; thin solid films for chemical and environmental sensors; nanostructured materials analysis; embedded systems; sequential and RTOS microcontroller programming
Dr. Yi Zhang

E-Mail Website
Guest Editor
Department of Energy Technology, Aalborg University, Aalborg, Denmark
Interests: power electronics; power semiconductors; reliability of power electronics; thermal modeling; thermal characterization; machine learning; modular multilevel converters; condition monitoring

Special Issue Information

Dear Colleagues,

Research on innovative technologies for new materials and semiconductors has significantly increased, driven by the expansion of microprocessors, smart devices, sensors, and consumer electronics connected to the Internet of Things (IoT) in the digital era. The prospects are stimulating, but several challenges are emerging. One such challenge is related to the energy consumption of these devices, their speed, and reliability. The enhanced integration of new thin film technologies with VLSI has been suggested, as well as the development of novel transistors for the creation of modern circuits. Therefore, this collection considers recent advances in the design, modeling, fabrication, characterization, applications, and perspectives of microelectronic and semiconductor devices. It focuses on how these developments can address current and future challenges, promoting innovative solutions that optimize performance and energy efficiency, while exploring emerging applications across various fields of science and technology.

Dr. Francisco López-Huerta
Dr. Edith Osorio de la Rosa
Dr. Rosa Maria Woo García
Dr. Yi Zhang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Applied Sciences is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • microelectronics
  • semiconductor devices
  • thin film technologies
  • VLSI
  • IoT
  • energy consumption
  • reliability
  • circuit design
  • modeling and fabrication
  • emerging applications

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Published Papers (2 papers)

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Research

16 pages, 2107 KiB  
Article
A Comparative Study of Kinetic Reaction Schemes for the Isomerization Process of the C6 Series
by Diana K. Díaz-Cervantes, Arturo Elías-Domínguez, Ángel Castro-Agüero, Fernando Pérez-Villaseñor, Arturo Ortíz-Arroyo, Friné López-Medina, Eduardo López-López and Edith Osorio-de-la-Rosa
Appl. Sci. 2025, 15(8), 4429; https://doi.org/10.3390/app15084429 - 17 Apr 2025
Viewed by 151
Abstract
The conversion of n-hexane into its isomers is highly relevant in the petroleum refining industry due to its contribution to improving gasoline quality by increasing the octane number. This study presents a comparative analysis of eight reaction schemes for the C6 series [...] Read more.
The conversion of n-hexane into its isomers is highly relevant in the petroleum refining industry due to its contribution to improving gasoline quality by increasing the octane number. This study presents a comparative analysis of eight reaction schemes for the C6 series isomerization process. It was demonstrated that incorporating rigorous chemical equilibrium information, based on experimental data, yields virtually identical results across all schemes, enabling a detailed analysis. Five schemes were taken from the literature, two were modified to ensure linear independence, and one was proposed in this study under the same criteria. It was confirmed that using linearly independent schemes reduces the number of reactions without affecting model accuracy, facilitating its numerical solution. Each scheme was evaluated using simulations under industrial conditions with a kinetic model that includes 16 reactions. The results show predictions with average errors of 1.44% in reactor outlet temperature and 3.25% in molar flow rates. The kinetic constants for each reaction of the C6 series were generalized, ensuring their invariability regardless of the scheme used, allowing for their application to different schemes and eliminating the need for individualized tuning of the isomerization reactors in the process under study. Full article
(This article belongs to the Special Issue Design, Development and Application of Microelectronics and Semiconductor Devices)
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14 pages, 5735 KiB  
Article
Defect Tailoring in HfO2/Si Films upon Post-Deposition Annealing and Ultraviolet Irradiation
by Silvestre Salas-Rodríguez, Fernanda I. González-Moreno, Rosa M. Woo-García, Agustín L. Herrera-May, Francisco López-Huerta and Felipe Caballero-Briones
Appl. Sci. 2025, 15(3), 1573; https://doi.org/10.3390/app15031573 - 4 Feb 2025
Viewed by 914
Abstract
In the present work, a study of the structural defects in HfO2 thin films deposited by dip-coating on p-type silicon substrates treated under different conditions, such as air-annealing, ultraviolet irradiation, and simultaneous annealing–UV irradiation, is presented. HfO2 thin films were analyzed [...] Read more.
In the present work, a study of the structural defects in HfO2 thin films deposited by dip-coating on p-type silicon substrates treated under different conditions, such as air-annealing, ultraviolet irradiation, and simultaneous annealing–UV irradiation, is presented. HfO2 thin films were analyzed by grazing incidence X-ray diffraction, Raman spectroscopy, optical fluorescence, atomic force microscopy, and UV-Vis diffuse reflectance. Films treated at 200 °C and 350 °C present peaks corresponding to monoclinic HfO2. After UV treatment, the films became amorphous. The combination of annealing at 350 °C with UV treatment does not lead to crystalline peaks, suggesting that UV treatment causes extensive structural damage. Fluorescence spectroscopy and UV-Vis spectroscopy suggest that films present oxygen vacancies as their main structural defects. A reduction in oxygen vacancies after the second thermal treatment was observed, but in contrast, after UV irradiation, fluorescence spectroscopy indicated that more defects are created within the mobility gap, irrespective of the simultaneous annealing at 350 °C. An electronic band diagram was proposed assigning the observed fluorescence bands and optical transitions, which, in turn, explain the electrical properties of the films. The results suggest that the electronic structure of HfO2 films can be tailored with a careful choice of thermal annealing conditions along with the controlled creation of defects using UV irradiation, which could open the way to multiple applications of the materials either in microelectronics, optoelectronics, as well as in photocatalytic/electrocatalytic applications such as photodegradation and hydrogen generation. Full article
(This article belongs to the Special Issue Design, Development and Application of Microelectronics and Semiconductor Devices)
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