Challenges and Future Trends of Low-Dimensional Materials

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Materials Science and Engineering".

Deadline for manuscript submissions: closed (20 April 2024) | Viewed by 1637

Special Issue Editors


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Guest Editor
School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 212013, China
Interests: carbon materials; topological materials; topological properties; topological phases; light-element topological materials; carbon compounds
Special Issues, Collections and Topics in MDPI journals

E-Mail Website
Guest Editor
School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 212013, China
Interests: the topological phenomena of condensed matter and cold atom; non-hermitian system
School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 212013, China
Interests: preparation and application of functional semi-conductor nanocomposites for energy storage; design and preparation of two-dimensional graphene-like layered materials; semiconductor optoelectronic materials and devices

Special Issue Information

Dear Colleagues,

Low-dimensional materials have attracted much attention in recent decades because of their extraordinary properties. After graphene, 2D honeycomb materials, transition metal dichalcogenides, Mxene, etc. have progressed rapidly in the scientific field as well as in engineering applications. Recent structural predictions and experimental reports indicate that there are more low-dimensional materials in nature, and more exotic properties emerge continuously.

This Special Issue aims to collect recent advances in low-dimensional materials, including new low-dimensional structures predicted by new methods (e.g., machine learning), new low-dimensional materials synthesized by new experimental means, new properties of low-dimensional structures/materials (e.g., mechanical, optical, electronic properties) and their applications in engineering. Hybrid low-dimensional structures such as heterostructures and intercalated structures are also welcome. This Special Issue will also address what the current challenges of synthesis of low-dimensional materials are, what the development trends of the low-dimensional materials are in the coming years, and what new technologies and applications are on the horizon.

Prof. Dr. Yuanping Chen
Dr. Xiaosen Yang
Dr. Jing Xu
Guest Editors

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Keywords

  • 2D materials
  • 1D materials
  • nanomaterial
  • machine learning
  • topological properties
  • optoelectronic materials
  • sensor
  • ion battery
  • energy materials

Published Papers (1 paper)

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Research

12 pages, 4282 KiB  
Article
Highly Stable CsPbI3 Perovskite Quantum Dots Enabled by Single SiO2 Coating toward Down-Conversion Light-Emitting Diodes
by Zhangcheng Pan, Xiaolin Zhu, Tianyue Xu, Qingyu Xie, Haitao Chen, Feng Xu, Hao Lin, Jia Wang and Yongfeng Liu
Appl. Sci. 2023, 13(13), 7529; https://doi.org/10.3390/app13137529 - 26 Jun 2023
Cited by 2 | Viewed by 1373
Abstract
All-inorganic CsPbI3 perovskite quantum dots (PeQDs) have sparked widespread research due to their excellent optoelectronic properties and facile synthesis. However, attaining highly stable CsPbI3 perovskite quantum dots (PeQDs) against heat and polar solvents still remains a challenge and hinders any further [...] Read more.
All-inorganic CsPbI3 perovskite quantum dots (PeQDs) have sparked widespread research due to their excellent optoelectronic properties and facile synthesis. However, attaining highly stable CsPbI3 perovskite quantum dots (PeQDs) against heat and polar solvents still remains a challenge and hinders any further practical application. Here, by exploiting (3-aminopropyl) triethoxysilane (APTES) as the sole silica (SiO2) precursor, we report a one-step in situ synthesis of single SiO2-coated CsPbI3 (SiO2-CsPbI3) PeQDs, namely that one SiO2 particle only contains one CsPbI3 PeQD particle. The obtained SiO2-CsPbI3 PeQDs are cubic in shape, have a more uniform size distribution, and possess narrow emission, with near unit photoluminescence quantum yields of up to 97.5%. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy confirm the formation of SiO2 through the hydrolysis of APTES on the CsPbI3 PeQDs surface. Furthermore, they have a significantly improved stability against storage, heat, and ethanol. By combining purple-emission GaN light-emitting diodes, the SiO2-CsPbI3 PeQDs were successfully employed as down-conversion emitters and exhibited considerable enhanced luminous performance and excellent stability, demonstrating their promising future in the practical application of solid-state lighting fields. Full article
(This article belongs to the Special Issue Challenges and Future Trends of Low-Dimensional Materials)
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