Electronic Materials, Volume 5, Issue 3
2024 September - 5 articles
Cover Story: A new method for evaluating hot-electron degradation in AlGaN/GaN HEMTs is proposed. This method exploits a commercial parameter analyzer to study VTH and RON drifts induced by on-state stress at VDS = 50 V. The results show that VTH drift and part of the RON degradation induced by on-state stress are recoverable after 1000 s from stress removal and likely due to the ionization of C-related acceptors in the buffer. Conversely, the remaining part of RON degradation (not recovered in 1000 s) is strongly affected by the surface treatment. The current level set during on-state stress affects the amount of non-recoverable degradation, confirming the involvement of hot electrons. Thanks to the monitoring of the parameters’ recovery, the proposed method provides important insights into the physical mechanism governing the parameters’ degradation. View this paper - Issues are regarded as officially published after their release is announced to the table of contents alert mailing list .
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