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Journal: Electronics, 2018
Volume: 7
Number: 410
Article:
Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect
Authors:
by
Jian Qin, Quanbin Zhou, Biyan Liao and Hong Wang
Link:
https://www.mdpi.com/2079-9292/7/12/410
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