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Electronics2026, 15(21), 5130;https://doi.org/10.3390/electronics15215130 
(registering DOI)
Journal: ElectronicsVolume: 15Number: 5130
Article: Prediction of Deep Neural Network for TCAD Analysis of Degradation Induced by Near-Interface Displacement Defects in 4H-SiC MOSFETs
  • Authors:
  • Gibeom Park and
  • Jungsik Kim *
Link: https://www.mdpi.com/2079-9292/15/21/5130

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