Article Versions Notes

García H, Boo J, Vinuesa G, G. Ossorio Ó, Sahelices B, Dueñas S, Castán H, González MB, Campabadal F. Influences of the Temperature on the Electrical Properties of HfO₂-Based Resistive Switching Devices. Electronics. 2021; 10(22):2816. https://doi.org/10.3390/electronics10222816

García, Héctor, Jonathan Boo, Guillermo Vinuesa, Óscar G. Ossorio, Benjamín Sahelices, Salvador Dueñas, Helena Castán, Mireia B. González, and Francesca Campabadal. 2021. "Influences of the Temperature on the Electrical Properties of HfO₂-Based Resistive Switching Devices" Electronics 10, no. 22: 2816. https://doi.org/10.3390/electronics10222816

García, H., Boo, J., Vinuesa, G., G. Ossorio, Ó., Sahelices, B., Dueñas, S., Castán, H., González, M. B., & Campabadal, F. (2021). Influences of the Temperature on the Electrical Properties of HfO₂-Based Resistive Switching Devices. Electronics, 10(22), 2816. https://doi.org/10.3390/electronics10222816