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Open AccessArticle

The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin Film

1
School of Engineering and Technology, Tra Vinh University, Tra Vinh 87000, Vietnam
2
Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
3
School of Basic Sciences, Tra Vinh University, Tra Vinh 87000, Vietnam
*
Authors to whom correspondence should be addressed.
Coatings 2019, 9(10), 645; https://doi.org/10.3390/coatings9100645
Received: 5 September 2019 / Revised: 30 September 2019 / Accepted: 1 October 2019 / Published: 6 October 2019
(This article belongs to the Special Issue Advanced Strategies in Thin Film Engineering by Magnetron Sputtering)
Ge0.07GaN films were successfully made on Si (100), SiO2/Si (100) substrates by a radio frequency reactive sputtering technique at various deposition conditions listed as a range of 100–400 °C and 90–150 W with a single ceramic target containing 7 at % dopant Ge. The results showed that different RF sputtering power and heating temperature conditions affected the structural, electrical and optical properties of the sputtered Ge0.07GaN films. The as-deposited Ge0.07GaN films had an structural polycrystalline. The GeGaN films had a distorted structure under different growth conditions. The deposited-150 W Ge0.07GaN film exhibited the lowest photoenergy of 2.96 eV, the highest electron concentration of 5.50 × 1019 cm−3, a carrier conductivity of 35.2 S∙cm−1 and mobility of 4 cm2·V−1∙s−1. View Full-Text
Keywords: Ge donor; GaN; growth condition; heating substrate temperature; RF power; reactive sputtering; thin film property Ge donor; GaN; growth condition; heating substrate temperature; RF power; reactive sputtering; thin film property
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MDPI and ACS Style

Thao, C.P.; Kuo, D.-H.; Tuan, T.T.A.; Tuan, K.A.; Vu, N.H.; Via Sa Na, T.T.; Nhut, K.V.; Sau, N.V. The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin Film. Coatings 2019, 9, 645.

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