- Communication
Modeling of Ionizing Radiation Effects for Negative Capacitance Field-Effect Transistors
- Yongguang Xiao,
- Xianghua Da,
- Haize Cao,
- Ke Xiong,
- Gang Li and
- Minghua Tang
A theoretical model for simulating ionizing radiation effects on negative capacitance field-effect transistors (NCFETs) with a metal–ferroelectric–insulator–semiconductor (MFIS) structure was established. Based on the model, the eff...

