- Article
Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth
- Xingfang Liu,
- Yu Chen,
- Changzheng Sun,
- Min Guan,
- Yang Zhang,
- Feng Zhang,
- Guosheng Sun and
- Yiping Zeng
Nano-textured 4H–SiC homoepitaxial layers (NSiCLs) were grown on 4H–SiC(0001) substrates using a low pressure chemical vapor deposition technique (LPCVD), and subsequently were subjected to high temperature treatments (HTTs) for investigation of the...

