Next Article in Journal
Layer-by-Layer Self-Assembling Gold Nanorods and Glucose Oxidase onto Carbon Nanotubes Functionalized Sol-Gel Matrix for an Amperometric Glucose Biosensor
Previous Article in Journal
Textile-Based Electronic Components for Energy Applications: Principles, Problems, and Perspective
Article

Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

1
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
2
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
3
Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China
*
Authors to whom correspondence should be addressed.
Academic Editor: Thomas Nann
Nanomaterials 2015, 5(3), 1532-1543; https://doi.org/10.3390/nano5031532
Received: 5 August 2015 / Revised: 10 September 2015 / Accepted: 11 September 2015 / Published: 18 September 2015
Nano-textured 4H–SiC homoepitaxial layers (NSiCLs) were grown on 4H–SiC(0001) substrates using a low pressure chemical vapor deposition technique (LPCVD), and subsequently were subjected to high temperature treatments (HTTs) for investigation of their surface morphology evolution and graphene growth. It was found that continuously distributed nano-scale patterns formed on NSiCLs which were about submicrons in-plane and about 100 nanometers out-of-plane in size. After HTTs under vacuum, pattern sizes reduced, and the sizes of the remains were inversely proportional to the treatment time. Referring to Raman spectra, the establishment of multi-layer graphene (MLG) on NSiCL surfaces was observed. MLG with sp2 disorders was obtained from NSiCLs after a high temperature treatment under vacuum at 1700 K for two hours, while MLG without sp2 disorders was obtained under Ar atmosphere at 1900 K. View Full-Text
Keywords: nano-textured; 4H–SiC; morphology; graphene; evolution nano-textured; 4H–SiC; morphology; graphene; evolution
Show Figures

Graphical abstract

MDPI and ACS Style

Liu, X.; Chen, Y.; Sun, C.; Guan, M.; Zhang, Y.; Zhang, F.; Sun, G.; Zeng, Y. Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth. Nanomaterials 2015, 5, 1532-1543. https://doi.org/10.3390/nano5031532

AMA Style

Liu X, Chen Y, Sun C, Guan M, Zhang Y, Zhang F, Sun G, Zeng Y. Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth. Nanomaterials. 2015; 5(3):1532-1543. https://doi.org/10.3390/nano5031532

Chicago/Turabian Style

Liu, Xingfang, Yu Chen, Changzheng Sun, Min Guan, Yang Zhang, Feng Zhang, Guosheng Sun, and Yiping Zeng. 2015. "Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth" Nanomaterials 5, no. 3: 1532-1543. https://doi.org/10.3390/nano5031532

Find Other Styles

Article Access Map by Country/Region

1
Only visits after 24 November 2015 are recorded.
Back to TopTop