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Journal: NanomaterialsVolume: 15Number: 555
Article: Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers
- Authors:
- Zhenyu Wang1,2,
- Zhaopeng Bai1,2 and
- Yunduo Guo1,2
- et al.
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