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Journal: Nanomaterials, 2025
Volume: 15
Number: 555
555
Article: Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers
Authors: by Zhenyu Wang, Zhaopeng Bai, Yunduo Guo, Chengxi Ding, Qimin Huang, Lin Gu, Yi Shen, Qingchun Zhang and Hongping Ma
Link: https://www.mdpi.com/2079-4991/15/7/555

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