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Journal: Nanomaterials, 2022
Volume: 12
Number: 3526
3526
Article: Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure
Authors: by Hee Dae An, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee and In Man Kang
Link: https://www.mdpi.com/2079-4991/12/19/3526

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